EPS5 MICROSEMI | Alldatasheet
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TRANSIENT VOLTAGE EPSS Series Bidirectional, 5 to 48V, 1000 Watts Peak FEATURES DESCRIPTION 4 * Bidirectional These bidirectional, high speed, voltage protection devices are ideally suited for applica- . i 7 tions where fast response is essential. The use of passivated die metallurgically bonded 1000W for & 20 microsec pulse cn both sides asssures long term reliability. This series is especially useful in protecting ‘+ Clamping time in pico seconds microprocessor, MOS, CMOS, TTL, Schottky TTL, ECL, I2L and linear integrated circuits « Extremely low leakage current from spurious transient disturbances including NEMP (Nuclear Electramagnetic Pulse) * Voidless hermetically sealed glass and electrostatic discharge. package * Metaliurgically bonded construction ABSOLUTE MAXIMUM RATINGS AT 25°C (PER LEG) Stand-Off Voltage. 5 to 48V (See Characteristics Table) Peak Pulse Power (© x 20 microsec pulse) 1000W (See Figure 1) Peak Pulse Power (1 millisec pulse) 15OW (See Figure 2) Peak Pulse Current See Characteristics Table Breakdown Voltage See Characteristics Table Power Continuous Storage and Operating Temperature 65°C to 4175°C MECHANICAL SPECIFICATIONS TPSE Geries | [A BODY 155 TYP. | r 39mm cas Max [, zen —! — ae FTL ovson | 077mm 4.03 700 MIN.__, | 250 MAX | 7 ol Ma oss. re2sMiN, 413mm ‘THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 10 Microsemi Corp. Watertown The dode exo 6187 415 je dade exports
Breakdown Leakage Clamping Temp. Figure 1. Current impulse Waveform Figure 2. Peak Pulse Power vs. Pulse Duration
1 TIME = gs)
Figure 3. Derating Curve Figure 4,