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AN)9737 APPLICATION NOTE © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 0136. 0) 5 . 0 (00003108. 0 )0004608. 0 ()( 22 === αe g K ENGK [cm 5] Step 13. See Table 2 for core size. To prevent core saturation, select a little big cor e after comparing two K g values: calculate value at Step 12 vs. the existing value in Table 2. The PQD42016 has a little bit big K g value (0.01327) in Table 2 with 2500 permeability (µi). Step 14. Calculate the current density, J.: 10)0004608. 0 ( 210)( 2 44 =×=×= uPm KAB ENGJ [A/cm 2] Step 15. Calculate the required wire area. A W(B) : 001207. 0265 32. 0 )( === J IA rms BW [cm 2] Step 16. Calculate the number of turns, N: 93.141001207. 0 4 . 04283. 0 =×== Bw ua A KWN [T] N=141.93; use 142 turns. Step 17. Calculate the required gap, l g: 0489. 035. 0 =×=∆ ×∆= −− ππ m g B INl [cm] Step 18. Calculate the new turns using a gap from Step 15. )10)(2500 74. 30489. 0 (101 )(4 . 0 )( 83 ππ µ c i g A MPLlL N [T] N=83.153; use 83[T]. where µi is permeability of selected core material and MPL is Magnetic Path Length of selected core. Step 19. Calculate the fringing flux, F: 238. 1)0489. 0 )001. 1 ( 2ln 58. 0 gc g l G A lF where G is window height of selected core. Step 20. Calculate the new turns, N new : 1010489. 0 )10())(4 . 0 ( 8 =××== − ππ FA LlN c g [T] Nnew =73.6; use 74. Step 21. Calculate the AC flux density in Tesla, BAC : 113. 00489. 0 )10)(238. 1)(2 === −− ππ g PK ac l FIN B [T] Step 22. Calculate the new wire size, AW(B) : 002315. 074 4 . 04283. 0 )( =×== new ua BW N KWA [A/cm 2] Step 23. Calculate the skin depth at expected opera ting frequency at low input voltage. The skin depth is t he radius of the wire. 02960. 0 1050 62. 662. 6 f γ [cm] Step 24.Calculate the required wire area under cons idering skin depth : 0027535. 0)( 2 == rWireA π [cm 2] Step 25. Select a wire size with the required area from Table 4. If the area is not within 10% of the required ar ea, then go to the next smallest size. AWG=#23 A µΩ/cm=666 Step 26. Calculate the required number of primary s trands, S np : 8938. 000259. 0 002315. 0)( === A Bw np Wire AS This means that the selected wire from the Step 25, AWG23, is enough or has enough margins for supplying the p rimaryD side current on the flyback converter. Step 27. Calculate the secondary and auxiliary turn s, N s Naux : 05.27 )35. 0)(902( )35. 01)(124(74 )1)(( max max −+=−+= DV DVVNN p dop s Ns=27.05; use 27. 31.17 )35. 0)(902( )35. 01)(115(74 )1)(( max max −+=−+= DV DVVNN p dop aux Naux =17.31; use 17. Step 28. Calculate the secondary peak current, I spk : 153. 235. 01 ) 7 . 0 ( 2 )1 ( max =−=−= D II o spk [A] Step 29. Calculate the secondary rms current, I srms : 0021. 13 )35. 01 (153. 23 )1 ( max =−=−= DII spksrms [A] Step 30. Calculate the secondary wire area, A sw(B) : 003781. 0265 0021. 1 )( === J IA rms BSW [cm 2] Step 31. Select a wire size with the required area from Table 4. If the area is not within 10% of the required ar ea, go to the next smallest size.
R6, and connected to nonDinverted pin at the op amp. voltage output condition than in the steady state. Figure 7. SoftHStart / Overshoot Prevention Method
Table 2. Various Core Types and Size Table 3. PQH42016 Core Dimensions Table 4. Wire Table
Figure 8. Schematic
AN)9737 APPLICATION NOTE © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com Bill Of Materials Item Number Part Reference Value Quantity Description (Manufacturer)
1 U101 FL6961 1 CRM PFC Controller (Fairchild Semic onductor)
2 U102 FOD817 1 Opto)Coupler (Fairchild Semiconduct or)
3 U201 KA431 1 Shunt Regulator (Fairchild Semicondu ctor)
4 U202 KA358A(LM2904) 1 Dual Op Amp (Fairchild Semiconductor)
5 Q101 FQPF3N80C 1 800V/3A MOSFET (Fairchild Semico nductor)
6 D101 DF04 1 1.5A SMD Bridge)Diode (Fairchild Semi conductor)
7 D102 RS1M 1 1000V/1A Ultra)Fast Recovery Diode (F airchild Semiconductor)
8 D103 RS1G 1 400V/1A Fast Recovery Diode (Fairchil d Semiconductor)
9 D201,D204 EGP30D 2 200V/3A Ultra)Fast Recovery Di ode (Fairchild Semiconductor)
10 D202,D203,
D205,D206 LL4148 3 General)Purpose Diode (Fairchild Semicondu ctor)
11 R101,R102,
R103 82KΩ 3 SMD Resistor1206
12 R104 120kΩ 1 SMD Resistor1206
13 R105 10KΩ 1 SMD Resistor1206
14 R106 20KΩ 1 SMD Resistor1206
15 R107 9.1kΩ 1 SMD Resistor1206
16 R108 47Ω 1 SMD Resistor 1206
17 R109 10Ω 1 SMD Resistor 1206
18 R110 220KΩ 1 2W
19 R111 30KΩ 1 SMD Resistor 1206
20 R112,R113 1Ω 2 SMD Resistor 1206
21 R201,R202,
R203 1Ω 3 SMD Resistor 1206 22 R204 2.2Ω 1 SMD Resistor 0806 23 R205 4.3KΩ 1 SMD Resistor 0806 24 R206 1.5KΩ 1 SMD Resistor 0806
25 R207 30KΩ 1 SMD Resistor 0806
26 R208 51KΩ 1 SMD Resistor 0806
27 R209 33KΩ 1 SMD Resistor 0806
28 R210 3.9KΩ 1 SMD Resistor 0806
29 R211 120KΩ 1 SMD Resistor 0806
30 R212 47KΩ 1 SMD Resistor 0806
31 R213 4.7KΩ 1 SMD Resistor 0806
32 R214 47KΩ 1 SMD Resistor 0806
AN)9737 APPLICATION NOTE © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com Bill Of Materials (Continued) Item Number Part Reference Value Quantity Description (Manufacturer)
33 C101 100nF/250V 1 X – Capacitor
34 C102 47nF/250V 1 X – Capacitor
35 C103 100nF/630V 1 Film Capacitor
36 C104 33µF/35V 1 Electrolytic Capacitor
37 C105 2.2nF/1kV 1 Y)Capacitor 38 C106 2.2µF 1 SMD Capacitor 0805
39 C107 30pF 1 SMD Capacitor 0805
40 C108 100nF 1 SMD Capacitor 0805
41 C201,C202 470µF/35V 2 Electrolytic capacitor
42 C203 1µF 1 SMD Capacitor 0805
43 C204 470nF 1 SMD Capacitor 0805
44 C205 10µF/35V 1 Electrolytic Capacitor
45 LF101,LF102 80mH 2 Line Filter
46 L101 27µH 1 Line Filter
47 L102 6.8µH 1 Line Filter
48 L201 5µH 1 Output Inductor
49 F101 1A/250V 1 Fuse
50 T1 PQ)42016 1 1mH
AN)9737 APPLICATION NOTE © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com Related Datasheets FL6961 — SinglexStage Flyback and Boundary Mode PFC Controller for Lighting ANx8025 — Design Guideline of SinglexStage Flyback ACxDC Converter Using FAN7530 for LED Lighting DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body , or (b) support or sustain life, or (c) whose failure to pe rform when properly used in accordance with instructions for u se provided in the labeling, can be reasonably expected to resu lt in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonabl y expected to cause the failure of the life support d evice or system, or to affect its safety or effectiveness.