EGUARD0324P SMCDIODE | Alldatasheet

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DataSheetN2196REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com eGuard0324P eGuard0324PTVSArrays *TheeGuard logoisatrademarkofSMCDiodeSolutions -SangdestMicroelectronics(Nanjing)Co. Description-eGuard™ Features MechanicalCharacteristics

Applications

PinConfiguration CircuitDiagram Pin Identification 1,2, 4, 5 Input Lines 6,7, 9, Output Lines (NoInternalConnection) 3,8 Ground TheeGuard0324P*isanultralowcapacitance,3.3VTVS(TransientVoltageSuppressor)arraydesignedtoprotect sensitivesemiconductorcomponentsfromelectricaloverstresswheninterfacedtohigh-speeddatalines. Theultra lowcapacitance(0.35pFtypicalI/OtoI/O)oftheeGuard0324Pensuresnegligiblesignalattenuationatdataratesupto 3.5GHz. Thesolid-stateconstructionensuresfastclampingofelectricaloverstresstransientsresultingfromESD (electrostaticdischarge),EFT(ElectricalFastTransients)orCDE(CableDischargeEvents). Inadditiontoultralowcapacitance,theeGuard0324Pprovidessuperiorsurgecurrentcapabilityandexcellentvoltage clampingperformance. Thesurgecurrentcapability(8x20μs)isratedat7A;approximately33%higherthanindustry norms. Furthermore,thetightclampingratio(VC/VRWM)of1.9(typicalat1A)ensuresharmfultransientsareclamped quicklyandclosetothenormalworkingvoltageofthecircuit. Thesupertightclampingratiois30%betterthan industrynormsandensuressuperiorprotectionofsensitiveintegratedcircuits. TheeGuard0324Pisdesignedtoprotectuptofourdatalines. ItispackagedinaRoHS/WEEEcompliant,10pinDFN thathasaverylowpackageprofileof0.5mm(nominal). Thecombinationofultralowcapacitance,highsurge capability, tightclampingratioandlowpackageprofilemaketheeGuard0324Ptheidealchoicefortoday’sESD sensitive,spaceconstrainedapplications.  ESDprotectioninaccordancewith: IEC61000-4-2(ESD)±17kV(air),±12kV(contact) IEC61000-4-5(lightning)7A(8/20μs) IEC61000-4-4(EFT)40A(5/50ns)  Tightclampingratio,VC/VRWM,ensuressuperior protection  Highreversesurgecurrent,IPP,capability  Lowidlecurrentminimizesstandbypower consumption  LowprofileDFNpackage  Packagedesignoptimizedforhighspeedlines  Flow-Throughdesign  ProtectsfourI/Olines  Lowcapacitance:0.35pFtypical(I/OtoI/O)  Lowoperatingvoltage:3.3V  Solid-statesilicon-avalanchetechnology  DFNWB2.5×1-10L10-pinpackage  RoHS/WEEECompliant  LeadPitch:0.5mm  Leadfinish:PureSn  Marking:MarkingCode  Packaging:TapeandReel  HighDefinitionMulti-MediaInterface(HDMI)  HighDefinitionMulti-MediaInterface2.1(HDMI2.1)  DigitalVisualInterface(DVI)  DisplayPort TMInterface  MDDI(MobileDisplayDigitalInterface)Ports  PCI(PeripheralComponentInterconnect)Express  eSATA(ExternalSerialAdvancedTechnology Attachment)Interfaces

DataSheetN2196REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com eGuard0324P Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourtapeandreelpackaging specification. * Pulsewidth <300µs, duty cycle<2% OrderingInformation Device Package Shipping eGuard0324P DFNWB2.5×1-10L (Pb-Free) 3000pcs/reel MaximumRatings@TA=25°Cunlessotherwisespecified Parameter Symbol Value Units PeakPulseCurrent(tp=8/20μs) IPP 7 A ESDper IEC61000-4-2(Air) ESDper IEC61000-4-2(Contact) VESD ±17 ±12 kV OperatingJunction TemperatureRange TJ -55to+150 °C StorageTemperatureRange TSTG -55to+150 °C ElectricalCharacteristics Characteristics Symbol Condition Min. Typ. Max. Units ReverseStand-OffVoltage VRWM AnyI/Opintoground - - 3.3 V ReverseBreakdownVoltage VBR @It=1mA AnyI/Opintoground 4.5 - - V ForwardVoltageDrop VF @IF=1mA,T=25℃ - - 0.9 V ReverseLeakageCurrent IR @VRWM =3.3V,T=25℃ AnyI/Opintoground - 0.5 1 μA ClampingVoltage VC @IPP =1A,tp=8/20μs AnyI/Opintoground - 9.5 10.5 V ClampingVoltage VC @IPP =7A,tp=8/20μs AnyI/Opintoground - - 17 V JunctionCapacitance Cj @VR =0V,fSIG =1MHz BetweenI/Opins - 0.35 0.4 pF JunctionCapacitance Cj @VR =0V,fSIG =1MHz AnyI/Opintoground - 0.65 0.8 pF

DataSheetN2196REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com eGuard0324P RatingsandCharacteristicsCurves Fig.2Pulse Waveform Fig.1PowerDeratingCurve Fig.4NormalizedCapacitance vs.Reverse VoltageFig.3ClampingVoltage vs.PeakPulse Current

DataSheetN2196REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com eGuard0324P Fig.5HDMI 1.4Eye Diagram Fig.6USB3.0Eye Diagram

DataSheetN2196REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com eGuard0324P eGuard0324P PartNameInformation MarkingDiagram MechanicalDimensionsDFNWB2.5×1-10L SYMBOL Millimeters Inches MIN. MAX. MIN. MAX. A 0.500 0.600 0.020 0.024 A1 0.000 0.050 0.000 0.002 A3 0.152REF. 0.006REF. D 0.900 1.100 0.035 0.043 E 2.400 2.600 0.094 0.102 k 0.200REF. 0.006REF. b 0.150 0.250 0.006 0.010 b1 0.100 0.200 0.004 0.008 b2 0.350 0.450 0.014 0.018 b3 0.130 0.230 0.005 0.009 e 0.500TYP. 0.020TYP. L 0.300 0.500 0.012 0.020 SolderingPadLayout(Millimeters) Where324P is eGuard0324P 324P = Part name X = Markingcodefordatecode Cautions：Molding resin EpoxyresinUL:94V-0 TVSArraysProduct Numberoflines 24=2Ground/4DataLines Suffix P=Ultra-lowCapacitance MaxStand-offVoltage 03=3.3VRWM(Volts) 324P X

DataSheetN2196REV.B  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com eGuard0324P DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionofthe datasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationof theuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualpropertyclaimsoranyother problemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuseata valueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwillhinder maintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythirdparty.When exportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsandregulations..