EGP30A JINANJINGHENG | Alldatasheet
Document overview
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Technical content
Reverse Voltage: 50 to 400 Volts Forward Current:3.0Amperes
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive load. For capacitive load, derate current by 20%.) DO-201AD Dimensions in inches and (millimeters) 0.375(9.50) 0.210(5.3) 0.052(1.32) 1.0(25.4) MIN 1.0(25.4) MIN 0.285(7.20) 0.190(4.8) DIA 0.048(1.22) DIA 2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts. Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.042ounce, 1.18 grams R SEMICONDUCTOR GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction Low forward voltage drop,High current capability High surge current capability Super fast recovery time Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Maximum Recurrent Peak Reverse Voltage VRRM VRMS VDC I(AV) IFSM TSTG VF IR CJ Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 0.375"(9.5mm)lead Length at Ta=55 C Maximum Instantaneous Forward Voltage at 1.0 A Operating Junction and Storage Temperature Range Maximum Reverse Recovery Time(Note1) Typical Junction Capacitance(Note2) Maximum DC Reverse Current At Rated DC Blocking Voltage Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) -65 to+125 -65 to+150 100 5.0 TJ 100 100 300 300 210 115.0 1.0 1.25 Trr 3.0 TA=25 C TA=100 C Symbols Volts Volts Volts Volts A PF Amp Amps C ns UnitsEGP 30A EGP 30B EGP 30D EGP 30F EGP 30G EGP 30J EGP 30K EGP 30M 400 400 280 800 800 480 1000 1000 700 600 600 420 105.0 200 200 140 1.7 SILICON RECTIFIER JFJF GPRC 8-20
RATINGS AND CHARACTE RISTIC CURVES EGP30A THRU EGP30M 0 25 50 75 100 125 150 1750 2.0 1.0 0.5 1.5 3.0 2.5 FIG.2-TYPICAL FORWARD CURRENT DERATING CURVEAVERAGE FORWARD CURRENT (A) SET TIME BASE FOR 5/10 ns/cm AMBIENT TEMPERATURE ( C) 1cm -0.25A +0.5A -1.0A FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC PULSE GENERATOR (NOTE2) NON INDUCTIVE OSCILLOSCOPE (NOTE1) D.U.T. NON INDUCTIVE NON IN- DUCTIVE 50Vdc (APPROX) 1(－) (＋) Trr Single Phase Half Wave 60hz Resistive or Inductive Load 0.375"(9.5mm) Lead Length NOTES:1.Rise Time=7ns max. input impedance=1 megohm 22pF 2.Rise Time=10ns max. source impedance =50 ohms 0.01 0.1 1.0 100 120 100 200 40 60 80 100 120 140 1 5 5010 100 FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS PEAK FORWARD SURGE CURRENT(AMPERES) REVERSE VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE(%) NUMBER OF CYCLES AT 60Hz 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TJ=25 C TJ=100 C 0.1 0.5 1 52 10 5020 100 100 175 150 125 FIG.6-TYPICAL JUNCTION CAPACITANCEJUNCTION CAPACITANCE(pF)TA=25 C INSTANTANEOUS REVERSE CURRENT ,(mA) EGP30A-EGP30G EG 0J-EG 0MP3 P3 0.01 0.1 INSTANTANEOUS FORWARD CURRENT( AMPERES) INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TA=25 C Pulse Width=300 s 1% Duty Cycle EGP30A-EGP30F EGP30G EGP30J-EGP30M EGP30A-EGP30G EGP30J-EGP30M 140 200 SILICON RECTIFIER 8-21