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Technical content

Features

  • Glass-Passivated Ca vity-Free Junction
  • High Surge Current Capability
  • Low Leakage Current
  • Super-Fast Recovery Ti me for High Efficiency
  • Low Forward Voltage, High Current Capability Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Note: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units IF(AV) Average Rectified Current .375 inch lead length at TA = 55°C 2.0 A IFSM Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 75 A TJ, TSTG Junction and Storage Temperature Range -65 to 150 °C PD Total Device Dissipation 3.13 W Derate above 25°C 25 mW°C RθJA Thermal Resistance, Junction to Ambient 40 °C/W RθJL Thermal Resistance, Junction to Lead 15 °C/W DO-15 Glass case COLOR BAND DENOTES CATHODE

EGP20A - EGP20K — 2.0 A Glass-Passivated High-Efficiency Rectifiers © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com EGP20A - EGP20K Rev. 1.1.0 2 Electrical Characteristics(2) TA = 25°C unless otherwise noted. Note: 2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. Parameter Device Units 20A 20B 20C 20D 20F 20G 20J 20K Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 280 420 560 V DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V Maximum Reverse Current at Rated VR TA = 25°C5 . 0 μA TA = 125°C1 0 0 μA Maximum Reverse-Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 50 75 ns Maximum Forward Voltage at 2.0 A 0.95 1.25 1.70 V Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 70 45 pF

EGP20A - EGP20K — 2.0 A Glass-Passivated High-Efficiency Rectifiers © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com EGP20A - EGP20K Rev. 1.1.0 4 Reverse Recovery Time Characteristic and Test Circuit Diagram 3.3.

Figure 6. AXIAL LEADED, JEDEC DO204, VARIATION (ACTIVE) warranty therein, which covers Fairchild products. http://www.fairchildsemi.com/packaging/. http://www.fairchildsemi.com/packaging/tr/do15_tr.pdf.

25.40 MIN (2X)

D) ALL DIMENSIONS ARE IN MILLIMETERS.

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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64