EGP20A ZSELEC | Alldatasheet
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! Lo w Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M ec h a n i c a l D a t a C ! Ca s e : M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.40 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 300 400 600 800 1000 V RM S Reverse Voltage VR(RMS) 35 70 140 210 280 420 560 700 V A v erage Rectified Output Current ( N o t e 1 ) @ T A = 55° C IO 2.0 A Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A Forward V o ltage @I F = 2. 0A V FM 1.0 1.3 1. 7 V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C IRM 5.0 100 µA Revers e Rec overy Time (Note 2) trr 50 75 nS T y pical Junction Capacitance (Note 3) Cj 60 40 pF Operati ng Temperature Range Tj -65 to +150 °C St orage Temperature Range TSTG -65 to +150 °C *Glass pas sivated forms are available upon request Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case DO-15 Dim M in Max A 25.4 — B 5.50 7. C 0.71 0. 864 D 2.60 3. All Di mensions in mm 2.0 A GLASS PASSIVATED ULTRAFAST DIODE ! G l ass Passivated Die Construction ! Lead Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com EGP20A – EGP20M 20A EGP EGP 20D EGP 20F EGP 20G EGP EGP 20J 20K EGP 20M EGP EGP20A – EGP20M Alldatasheet
/G01/G01 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175 200 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T , AMBIENT TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve A ° Single phase half-wave Hz resistive or inductive load 0.01 1.0 2.0 0.6 0.8 1.0 1.2 1.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 Cj ° Pulse width = 300 sm I , PEAK FORWARD SURGE CURRENT (A)FSM 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com EGP20J-EGP20M EGP20A – EGP20M EGP20A – EGP20M EGP20A-EGP20F EGP20G 100 1 10 100 C , CAP ACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ° EGP20A-EGP20G EGP20J-EGP20M Alldatasheet