EGP10A ZSELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
! Lo w Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability Me c h a n i c a l D a t a Maximum Ratings and Electrical Characteristics @TA=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol EGP Unit P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 300 400 600 800 1000 V RM S Reverse Voltage VR(RM S) 35 70 140 210 280 420 560 700 V A verage Rectified Output Current ( N o t e 1 ) @ T A = 55°C IO 1.0 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward V oltage @I F FM 1.0 1. 3 1.7 V Peak Reverse Current @T A = 25° C At Rated DC Blocking Voltage @T A = 100° C IRM 5.0 100 µA Revers e Recovery Time (Note 2) trr 50 75 nS T ypical Junction Capacitance (Note 3) Cj 60 40 pF Operat i ng Temperature Range Tj -65 to +150 ° C S t orage Temperature Range TSTG -65 to +150 ° C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 0A GLASS PASSIVATED ULTRAFAST DIODE ! G lass Passivated Die Construction C ! C a s e : M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 10B EGP 10D EGP 10F EGP 10G EGP EGP 10J 10K EGP 10M EGP EGP10A – EGP10M DO-41 Dim M in Max A 24.5 — B 4.06 5. C 0.60 0. D 2.00 3. All Di mensions in mm Alldatasheet
/G01/G01 0.01 1.0 2.0 0.6 0.8 1.0 1.2 1.4 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T =
25 Cj °
= 300 sm 50V DC Approx NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under T est trr Settimebasefor5 /10ns/cm +0.5A -0.25A -1.0ANotes: Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0.25 0.50 0.75 1.00 02 5 5 0 75 100 125 150 175 I , AVERAGE FWD RECTIFIED CURRENT (A)(AV) T , AMBIENT TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve A ° Single phase half wave Resistive or Inductive load EGP10A – EGP10M EGP10A – EGP10M EGP10A-EGP10F EGP10G EGP10J-EGP10M 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current Pulse width 8.3 ms single half-sine-wave (JEDEC method) 100 1 10 100 C , CAPACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ° EGP10A-EGP10G EGP10J-EGP10M Alldatasheet