EGP10A JINANJINGHENG | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Reverse Voltage: 50 to 1000 Volts Forward Current:1.0Ampere
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Case: JEDEC DO-41 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012ounce, 0.34 gram (Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive load. For capacitive load,derate current by 20%.) 2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts. GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction Low forward voltage drop,High current capability High surge current capability Super fast recovery time Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Maximum Recurrent Peak Reverse Voltage VRRM VRMS VDC I(AV) IFSM TSTG VF IR CJ Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 0.375"(9.5mm)lead Length at Ta=55 C Maximum Instantaneous Forward Voltage at 1.0 A Operating Junction and Storage Temperature Range Maximum Reverse Recovery Time(Note1) Typical Junction Capacitance(Note2) Maximum DC Reverse Current At Rated DC Blocking Voltage Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) -65 to+125 -65 to+150 50 25 5.0 TJ 100 100 200150 200150 140105 30.0 0.95 1.25 Trr 1.0 DO-41 Dimensions in inches and (millimeters) 0.205(5.20) 0.107(2.7) 0.034(0.85) 1.0(25.4) MIN 1.0(25.4) MIN 0.180(4.10) 0.080(2.0) DIA 0.028(0.71) DIA TA=25 C TA=100 C R SEMICONDUCTOR Symbols Volts Volts Volts Volts A PF Amp Amps C ns UnitsEGP 10A EGP 10B EGP 10D EGP 10F EGP 10G EGP 10J EGP 10K EGP 10M 400 400 280 800 800 280 1000 1000 280 600 600 280 SILICON RECTIFIER JFJF GPRC 8-4
RATINGS AND CHARACTE RISTIC CURVES EGP10A THRU EGP10M 0.01 0.1 1.0 100 0.01 0.1 200 40 60 80 100 120 140 1 5 5010 100 0 25 50 75 100 125 150 1750 1.0 0.5 1.5 FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT( AMPERES) INSTANTANEOUS REVERSE CURRENT ,(mA) PEAK FORWARD SURGE CURRENT(AMPERES) INSTANTANEOUS FORWARD VOLTAGE (VOLTS) REVERSE VOLTAGE. (V) SET TIME BASE FOR 5/10 ns/cm PERCENT OF RATED PEAK REVERSE VOLTAGE(%) NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE ( C) 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TJ=25 C TJ=100 C 0.1 0.5 1 52 10 5020 1cm -0.25A +0.5A -1.0A 100 100 175 150 125 FIG.6-TYPICAL JUNCTION CAPACITANCE FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC JUNCTION CAPACITANCE(pF) TJ=25 C Single Phase Half Wave 60hz Resistive or Inductive Load 0.375"(9.5mm) Lead Length PULSE GENERATOR (NOTE2) NON INDUCTIVE OSCILLOSCOPE (NOTE1) D.U.T. NON INDUCTIVE NON IN- DUCTIVE 50Vdc (APPROX) 1(－) (＋) Trr TA=25 C TA=25 C Pulse Width=300 s 1% Duty Cycle NOTES:1.Rise Time=7ns max. input impedance=1 megohm 22pF 2.Rise Time=10ns max. source impedance =50 ohms EGP10A-EGP10G EGP10J-EGP10M EGP10A-EGP10G EGP10J-EGP10M EGP10A-EGP10F EGP10G EGP10J-EGP10M SILICON RECTIFIER 8-5