EGP10D SSC | Alldatasheet

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07/11/2007 Rev.1.00 www.SiliconStandard.com 1 PRODUCT SUMMARY Reverse Voltage 50 to 400 Volts Forward Current 1.0 Ampere

FEATURES

Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage drop Low leakage current Low switching losses, high efficiency High forward surge capability Solder Dip 260 °C, 40 seconds MECHANICAL DATA Case: DO-204AL, molded epoxy over glass body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end Weight: 0.012 ounce, 0.34 gram Pb-free; RoHS-compliant EGP10D

07/11/2007 Rev.1.00 www.SiliconStandard.com 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 oC ambient temperature unless otherwise specified. Notes: 1. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length 2. Pulse test: 300us pulse width, 1% duty cycle r e t e m a r aPl o b m y SP G E A 0 1 P G E B 0 1 P G E C 0 1 P G E D 0 1 P G E F 0 1 P G E G 0 1 t i n U e g a t l o v e s r e v e r k a e p e v i t i t e p e r m u m i x aMV M R R 050 010 510 020 030 04s t l o V e g a t l o v S M R m u m i x aMV S M R 530 75 010 410 120 82s t l o V e g a t l o v g n i k c o l b C D m u m i x aMV C D 050 010 510 020 030 04s t l o V t n e r r u c d e i f i t c e r d r a w r o f e g a r e v a m u m i x a M T t a h t g n e l d a e l ) m m 5 . 9 ( " 5 7 3 . 0A 5 5 =oC I ) V A ( F 0 .1p m A e v a w - e n i s f l a h e l g n i s s m 3 . 8 t n e r r u c e g r u s d r a w r o f k a e P ) d o h t e M C E D E J ( d a o l d e t a r n o d e s o p m i r e p u sI M S F 0 . 03s p m A A 0 . 1 t a e g a t l o v d r a w r o f s u o e n a t n a t s n i m u m i x aMV F 5 9 .05 2 .1s t l o V t n e r r u c e s r e v e r C D m u m i x a M e g a t l o v g n i k c o l b C D d e t a r t a T @A 5 2 =oC T @A 5 2 1 =oC IR 0 . 5 0 0 1 uA I t a e m i t y r e v o c e r e s r e v e r m u m i x a MF I , A 5 . 0 =R , A 0 . 1 = Ir r A 5 2 . 0 = t r r 0 5 nS z H M 1 , V 0 . 4 t a e c n a t i c a p a c n o i t c n u j l a c i p yTC J . 220 0. 5 1 pF ) 1 e t o N ( e c n a t s i s e r l a m r e h t l a c i p yTR θ A J 0 . 0 5 o W / C e g n a r e r u t a r e p m e t e g a r o t s d n a n o i t c n u j g n i t a r e pOT J T ,G T S 0 5 1 + o t 5 5 - oC EGP10D

07/11/2007 Rev.1.00 www.SiliconStandard.com 3 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. RATINGS AND CHARACTERISTIC CURVES (TA=25oC unless otherwise noted)