EGP10A DSK | Alldatasheet
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FEATURES
Terminals: A xial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EGP 10C EGP 10D UNITS M axim um recurrent peak reverse voltage V RRM 150 200 V Max imum RMS v oltage V RMS 105 140 V Maximum DC blocking voltage V DC 150 200 V Maximum average forw ard rectified current 9.5mm lead length @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 1.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =125 M axim um reverse recovery tim e (N ote1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG EGP10A(Z) --- EGP10G(Z) Case:JEDEC DO--41,molded plastic Easily cleaned with alcohol,Isopropanol and similar solvents High current capability The plastic material carries U/L recognition 94V-0 EGP 10B HIGH EFFICIENCY RECTIFIERS A I F(AV) 1.0 300 DO - 41 VOLTAGE RANGE: 50 --- 400 V CURRENT: 1.0 A M AXIM UM RAT INGS AND ELECT RICAL CHARACT ERIST ICS EGP 10G EGP 10F 300 210 EGP 10A - 55 ---- + 150 A 3.T hermal resistance from junction to ambient. I FSM I R NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MHz and applied rev erse uoltage of 4.0V DC. A - 55 ---- + 150 30.0 400 280 40050 100 100 1522 1.250.95 5.0 100.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
REVERSE VOLT AGE,VOLT S FIG.4--TYPICAL REVERSE CHARACTERISTICS SET TIME BASE FOR 20/30 ns/cm FIG. 3 --TYPICAL FORWARD CHARACTERISTICS PEAK FORWARD SURGE CURRENT 2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω. INSTANTANEOUS FORWARD CURREN T INSTANTANEOUS FORWARD VOLTAGE,VOLTS NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF EGP10A (Z)---EGP10G(Z) FIG.1 --TEST CIRCUIT DI AGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC JUNCTION CAPACITANCE,pF NUMBER OF CYCLES AT 60Hz AMPERES FIG.6--FORWARD DERATING CURVE FIG.5--TYPICAL JUNCTION CAPACITANCE AVERAGE FORWARD CURRENT AMBIENT TEMPERATURE, 0.375"(9.5mm)LEAD LENGTH 25 0 0.5 1.0 10075 125 150 175 Single Phase Half Wave 60Hz Resistive or Inductive Load 10 100 T J =125 8.3ms Single Half Sine-W ave EGP10A-EGP10G 00.01 0.04 0.1 1.0 100 T J =25 Pulse Width=300 µ S 50\\100\\150\\200V 300\\400V 0.1 EGP10A-EGP10D EGP10F&EGP10G 1 100 104 T J =25 -1.0A -0.25A +0.5A t rr 1cm N NONIN- DUCTIVE N D.U.T. OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) (+) PULSE GENERATOR (NOTE2) (-) Diode Semiconductor Korea www.diode.kr