EGL1A DSK | Alldatasheet
Document overview
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Technical content
D2=D1 Đ Ē 0.20 0.5± 0.1 0.5± 0.1 3.5± 0.2 1.6± 0.1
FEATURES
◇ Plastic package has underwriters laboratories flammability classification 94V-0 ◇ Glass passivated chip junction ◇ For surface mount applications ◇ High temperature metallurgically bonded construction of 265℃ for 10 seconds in solder bath MECHANICAL DATA ◇ Case: JEDEC DO-213AA,molded plastic ◇ Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 ◇ Polarity: Color band denotes cathode ◇ Weight: 0.0014 ounces, 0.036 grams ◇ Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%. EGL EGL EGL EGL EGL EGL UNITS Maximum recurrent peak reverse voltage 100 200 300 400 500 600 V Maximum RMS voltage 70 140 210 280 350 420 V Maximum DC blocking voltage 100 200 300 400 500 600 V Maximum average forward rectified current T T =75℃ Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage @1.0A V Maximum reverse current @T A =25℃ at rated DC blocking voltage @T A =125℃ Maximum reverse recovery time (Note 1) ns Typical junction capacitance (Note 2) pF Typical thermal resistance (Note 3) K/W Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A,I R =1.0A,I rr =0.25A 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 1.25 1.35 1.70 t rr V DC A µA I (AV) 1.0 I FSM A V F I R 5.0 V RRM V RMS EGL C j T j T STG R θJA - 55 ---- +175 - 55 ---- +175 150 EGL1A - - - EGL1J ◇ High temperature soldering guaranteed:450 ℃/5 seconds DO - 213AA VOLTAGE RANGE : 50 --- 600 V CURRENT: 1.0 A at terminals.Complete device sub-mersible temperature ◇ Cavity-free glass passivated junction SURFACE MOUNT RECTIFIERS Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.01 0.1 100 Tj=25 C Pulse Width=300 s 1% Duty Cycle o EGL1A-EGL1D EGL1F-EGL1G EGL1H-EGL1J .4 1.0 2 100 41 0 20 4 0 10 0 f=1MHz T J =25 50 75 100 125 150 175 0.6 1.0 1.5 0.8 0.4 0.2 RESISTIVE OR INDUCTIVE LOAD COPPER PAD AREAS 11 0 100 TL=110 8.3ms SINGLE HALF SINE-WAVE (JEDEC METHOD) 0.1 20 40 60 80 1000.01 T A =125 TA=1 TA=2 100 0.1 1 10 0.01 0.1 100 100 AVERAGE FORWARD RECTIFIED CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE LEAKAGE CURRENT(mA) REVERSE VOLTAGE(V) FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT TERMINAL TEMPERATURE ℃ NUMBER OF CYCLES AT 60HZ INSTANTANEOUS FORWARD VOLTAGE(V) FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE PERCENT OF RATED PEAK REVERSE VOLTAGE. ( ％) JUNCTION CAPACITANCE(pF) T,PULSE DURATION, EGL1A - - - EGL1J FIG.3 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.5 -- TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANC E o C/W) FIG.1 -- FORWARD CURRENT DERATING CURVE www.diode.kr Diode Semiconductor Korea