EGF2A ZSELEC | Alldatasheet
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I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y ! Low Forward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanic al Data ! T erminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number Maximum R atings and Electrical Characteristics @TA=25° C unless otherwise specified P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RM A v erage Rectified Output Current @T L = 100° C I O 2.0 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward V oltage @I F = 2.0A V FM P e a k R e v e r s e C u r r e n t @ TA = 25° C At Rated DC Blocking Voltage @T A = 100 °C IRM 500 µA Revers e Recovery Time (Note 1) trr T ypical Junction Capacitance (Note 2) Cj 25 pF T ypical Thermal Resistance (Note 3) R/G01JL 30 °C/W Operat ing and Storage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0. 5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 1 of 2 EGF2A – EGF2M Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Dim Min Max Min Max A 2.29 2.92 3.30 3.94 B 4.00 4.60 4.06 4.57 C 1.27 1.63 1.96 2.21 D 0.15 0.31 0.15 0.31 E 4.80 5.59 5.00 5.59 G 0.10 0.20 0.10 0.20 H 0.76 1.52 0.76 1.52 J 2.01 2.62 2.00 2.62 All Dimensions in mm A B C D GH E J SMA SMB ! Lea d Free: For RoHS / Lead Free Version Weight:! SMA Weight: 0.064 grams (approx.) SMB Weight: 0.093 grams (approx.) Alldatasheet
50 NI (Non-inductive)W 10 NIW
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under T est trr Settimebasefor10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 0.01 0.1 1.0 100 1000 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA)R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics T =
100 Cj °
T =
25 Cj °
0.01 0.1 1.0 0 0.4 0.8 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T - = 300 sm 1.2 1.6 2.0 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve Single Half Sine-Wave (JEDEC Method) T =
150 Cj °
VERAGE FORWARD CURRENT (A)(AV), T,LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° 2 of 2 EGF2J – EGF2M EGF2A – EGF2D 6 0 1.0 2.0 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com EGF2G EGF2A – EGF2M EGF2A – EGF2M Alldatasheet