EGF20A JINANJINGHENG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Reverse Voltage: 50 to 1000 Volts Forward Current:2.0Amperes MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive load. For capacitive load,derate current by 20%.) 2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts. R SEMICONDUCTOR

FEATURES

Maximum Recurrent Peak Reverse Voltage VRRM VRMS VDC I(AV) IFSM TSTG VF IR CJ Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 0.375"(9.5mm)lead Length at Ta=55 C Maximum Instantaneous Forward Voltage at 1.0 A Operating Junction and Storage Temperature Range Maximum Reverse Recovery Time(Note1) Typical Junction Capacitance(Note2) Maximum DC Reverse Current At Rated DC Blocking Voltage Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) -65 to+125 -65 to+150 100 5.0 TJ 100 100 300 300 210 65.0 0.95 1.25 Trr 2.0 TA=25 C TA=100 C Symbols Volts Volts Volts Volts A PF Amp Amps C ns UnitsEGF 20A EGF 20B EGF 20D EGF 20F EGF 20G EGF 20J EGF 20K EGF 20M 400 400 280 800 800 480 1000 1000 700 600 600 420 60.0 200 200 140 1.7 GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction For Surface Mount Applications Easy to pick and place Low forward voltage drop,High current capability High surge current capability Super fast recovery time Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Case: JEDEC SMB(DO-214AA) molded plastic body Terminals: solder plated ,solderable per MIL-STD-750,method 2026 Polarity: color band denotes cathode end Weight: 0.003ounce,0.093 gram Dimensions in inches and (millimeters) SMB(DO-214AA) 0.086(2.20) 0.096(2.44) 0.180(4.57) 0.220(5.59) 0.060(1.52) 0.012(0.305) 0.008(0.203) MAX 0.155(3.94) 0.077(1.95) 0.084(2.13) 0.160(4.06) 0.205(5.21) 0.030(0.76) 0.006(0.152) 0.130(3.30) SILICON RECTIFIER GPRC 8-16

RATINGS AND CHARACTE RISTIC CURVES EGF20A THRU EGF20M 0 25 50 75 100 125 150 1750 2.0 1.0 0.5 1.5 3.0 2.5 FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (A) SET TIME BASE FOR 5/10 ns/cm AMBIENT TEMPERATURE ( C) 1cm -0.25A +0.5A -1.0A FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC Single Phase Half Wave 60hz Resistive or Inductive Load 0.375"(9.5mm) Lead Length PULSE GENERATOR (NOTE2) NON INDUCTIVE OSCILLOSCOPE (NOTE1) D.U.T. NON INDUCTIVE NON IN- DUCTIVE 50Vdc (APPROX) 1(－) (＋) Trr NOTES:1.Rise Time=7ns max. input impedance=1 megohm 22pF 2.Rise Time=10ns max. source impedance =50 ohms EGF20A-EGF20G EGF20J-EGF20M 0.01 0.1 1.0 100 0.01 0.1 200 40 60 80 100 120 140 1 5 5010 100 FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT( AMPERES) INSTANTANEOUS REVERSE CURRENT ,(mA) PEAK FORWARD SURGE CURRENT(AMPERES) INSTANTANEOUS FORWARD VOLTAGE (VOLTS) REVERSE VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE(%) NUMBER OF CYCLES AT 60Hz 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TJ=25 C TJ=100 C 0.1 0.5 1 52 10 5020 100 100 175 150 125 FIG.6-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE(pF) TJ=25 C TA=25 C TA=25 C Pulse Width=300 s 1% Duty Cycle EGF20A-EGF20G EGF20J-EGF20M EGF20A-EGF20F EGF20G EGF20J-EGF20M FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS SILICON RECTIFIER 8-17