EGF1T TAYCHIPST | Alldatasheet
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Technical content
1300V 1.0A EGF1T 1 of 2 Web Site: www.taychipst.com
FEATURES
E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MECHANICAL DATA Surface Mount Glass Passivated Ultrafast Rectifier
- Cavity-free glass-passivated junction Ideal for automated placement Ultrafast reverse recovery time Low switching losses, high efficiency Avalanche surg e energy capability Meets environmental standard MIL-S-19500 Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C Solder dip 260 °C, 40 s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Case: DO-214BA, molded plastic over glass body Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) PARAMETER SYMBOL EGF1T UNIT Device marking code ET Maximum repetitive peak reverse voltage V RRM 1300 V Maximum RMS voltage V RMS 910 V Maximum DC blocking V DC 1300 V Maximum average forward rectified current I F(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 20 A Non-repetitive avalanche energy at T A = 25 °C, I AS = 1 A, L = 30 mH E AS 15 mJ Operating junction and storage temperature range T J , T STG - 55 to + 150 °C Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Note: ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL EGF1T UNIT Maximum instantaneous forward voltage (1)
1.0 A T
J = 25 °C V F 3.0 V Maximum DC reverse current (2) V RM T J = 25 °C T J = 125 °C I R 5.0 50 µA Typical reverse recovery time I F = 0.5 A, I R =1.0 A, I rr = 0.25 A t rr 75 ns Typical junction capacitance 4.0 V, 1 MHz C J 8.0 pF THERMAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) PARAMETER SYMBOL EGF1T UNIT Typical thermal resistance (1) R θJA R θJL 20 °C/W