EGF1A ZSELEC | Alldatasheet
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! I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y B ! Low Forward Voltage Drop, High Efficiency ! S u r g e O v e r l o a d R a t i n g t o 3 0 A P e a k D ! L o w P o w e r L o s s A ! U l t r a - F a s t R e c o v e r y T i m e F ! Plastic Case Material has UL Flammability C l a s s i f i c a t i o n R a t i n g 9 4 V - O C H G /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01E Mechanical Da ta ! C ase: SMA/DO-214AC, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.064 grams (approx.) ! Lead Free: For RoHS / Lead Free Version Maximum Rat ings and Electrical Characteristics @TA=25°C unl ess otherwise specified Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Average Rec tified Output Current @T L = 100°C IO 1.0 A Non-Repeti t ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 30 A Forward V oltage @I F = 1.0A V FM P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 500 µA Reverse Rec o very Time (Note 1) trr Ty pi cal Junction Capacitance (Note 2) Cj 15 pF Ty pi cal Thermal Resistance (Note 3) R/G01JL 30 °C/ W Operati ng and S torage Temperature Range Tj, TSTG Note: 1. M easured with IF = 0.5A, IR = 1. 0A, Irr = 0. 25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. SMA/ DO-214AC Dim M i n Max A 2.50 2. 90 B 4.00 4. 60 C 1.20 1. 60 D 0.152 0. 305 E 4.80 5. 28 F 2.00 2. 44 G 0.051 0. 203 H 0.76 1. 52 All Dim ensions in mm 1 of 2 EGF1A – EGF1M Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet
50 NI (Non-inductive)W 10
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor10ns/cm +0.5A -0.25A -1.0ANotes: 1. RiseT ime = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 ReverseRecovery Time Characteristic and Test Circuit (+) (+) (-) (-) 0.01 0.1 1.0 100 1000 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA)R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics T = 100Cj ° T = 25Cj ° 0.01 0.1 1.0 0 0.4 0.8 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T - 25Cj ° Pulse Width =300 sm 1.2 1.6 2.0 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A)FSM NUMBER OF CYCLESA T 60Hz Fig. 3 Forward Surge Current Derating Curve Single Half Sine-Wave (JEDEC Method) T = 150Cj ° 0.5 1.0 50 75 100 125 150 I AVERAGE FOR WARD CURRENT (A)(AV), T,LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° 2 of 2 EGF1A – EGF1M EGF1A – EGF1M Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com EGF1G EGF1J – EGF1M EGF1A – EGF1D Alldatasheet