EGF1A ONSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
Features
- Low Forward V oltage Drop
- Low Profile Package
- Fast Switching for High Efficiency
- These Devices are Pb−Free, Halide Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit1A 1B 1C 1D VRRM Maximum Repetitive Reverse Voltage 50 100 150 200 V IF(AV) Average Rectified Forward Current, @ TL = 100°C 1.0 A IFSM Non−repetitive Peak Forward Surge Current 8.3 ms Single Half−Sine−Wave 30 A Tstg Storage Temperature Range −65 to +175 °C TJ Operating Junction Temperature −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 200 V PD Power Dissipation 2.0 W R/C0113JA Thermal Resistance, Junction to Ambient* 85 /C0095C/W R/C0113JL Thermal Resistance, Junction to Lead* 30 /C0095C/W *Device mounted on FR−4 PCB 0.013 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Device Unit1A 1B 1C 1D VF Forward Voltage @ 1.0 A 1.0 V trr Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 50 ns IR Reverse Current @ Rated VR TA = 25/C0095C TA = 100/C0095C 100 /C0109A /C0109A CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 15 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. MARKING DIAGRAM SMA (DO−214AC) CASE 403AE COLOR BAND DENOTES CATHODE $Y&Z&3 EGF1x $Y = Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code EGF1x = Specific Device Code (x = A, B, C, D) Device Package Shipping †
ORDERING INFORMATION
(Pb−Free, Halide Free) 7500 / Tape & ReelEGF1B EGF1C EGF1D †For information on tape and reel specifications , including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Figure 6. Test Circuit Diagram Figure 7. Reverse Recovery Time Characteristic
- Rise time = 7.0 ns max; Input impedance = 1.0 M/C0087 22 pF.
- Rise time = 10 ns max; Source impedance = 50 /C0087.
2.65 4.30 1.75
2.50 MAX
2.20 1.90 0.30 0.05B 0.203 0.050 2.05 1.95 A C B 1.65 1.20 2.95 2.50 B 5.60 4.80 B 4.75 4.00A B 0.41 0.15 1.52 0.75 R0.15 4X 0.45 DETAIL A SCALE 20 : 1 GAGE PLANE NOTES: A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO214 VARIATION AC. B DOES NOT COMPLY JEDEC STANDARD VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSIONS AND TOLERANCE AS PER ASME Y14.5−2009. E. LAND PATTERN STD. DIOM5025X231M LAND PATTERN RECOMMENDATION TOP VIEW SIDE VIEW
0.13 M CB A
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON13440GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1SMA © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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