EG1AE GULFSEMI | Alldatasheet
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Rev.5 www.gulfsemi.com EG1AE THRU EG1JE GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE ：： ：：50 TO 1000V CURRENT ：： ：： 0.7A FEATURE A - 405 Low power loss High surge capability Glass passivated chip junction Ultra-fast recovery time for high efficiency High temperature soldering guaranteed 250 ℃/10sec/0.375 ″lead length at 5 lbs tension MECHANICAL DATA Terminal ：Plated axial leads solderable per MIL-STD 202E, method 208C Case ：Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity ：color band denotes cathode Mounting position：any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half -wave, 50HZ, resistive or inductive load rating at 25 ℃, unless otherwise stated) SYMBOL EG1 AE EG1 BE EG1 DE EG1 GE EG1 JE units Maximum Recurrent Peak Reverse Voltage Vrrm 50 100 200 400 600 V Maximum RMS Voltage Vrms 35 70 140 280 420 V Maximum DC blocking Voltage Vdc 50 100 200 400 600 V Maximum Average Forward Rectified Current 3/8″lead length at Ta =55 ℃ If(av) 1.0 0.7 0.5 A Peak Forward Surge Current 10ms single half sine-wave superimposed on rated load Ifsm 30 15 10 A IF=0.5A V Maximum DC Reverse Current Ta =25 ℃ at rated DC blocking voltage Ta =125℃ Ir 10.0 200.0 μA μA Maximum Reverse Recovery Time (Note 1) Trr 50 nS Typical Junction Capacitance (Note 2) Cj 20 10 pF Typical Thermal Resistance (Note 3) Rth(ja) 20.0 ℃/W Storage and Operating Junction Temperature Tstg,Tj -55 to +150 ℃ Note ： 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient at 3/8 ″lead length, P.C. Board Mounted
Rev.5 www.gulfsemi.com RATINGS AND CHARACTERISTIC CURVES EG1AE THRU EG1JE