EESX1140 OMRON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

84 EE-SX1140 Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive) EE-SX1140 ■ Dimensions Note: All units are in millimeters unless otherwise indicated. ■ Features  General-purpose model with a 14-mm-wide slot.  16.3-mm-tall model with a deep slot.  PCB mounting type. ■ Absolute Maximum Ratings (Ta = 25°C) Note: 1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Internal Circuit K A C E Terminal No. Name A Anode K Cathode C Collector E Emitter Dimensions Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Cross section AA Unless otherwise specified, the tolerances are as shown below. Four, C0.3Four, 0.8 Four, 0.8 3.2±0.1 dia. through-hole CE 12.5±0.15 F our, 0.5 Four, 0.25 (19.9) B A B A 1.5 (2.5) 0.2 16.3 5.2 2.8 Optical axis (13.5) 4.5±0.5 K A 1.5 (2.5) Cross section BB Item Symbol Rated value Emitter Forward current IF 50 mA (see note 1) Pulse forward cur- rent I FP 1 A (see note 2) Reverse voltage V R 4 V Detector Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage V ECO --- Collector current IC 20 mA Collector dissipa- tion P C 100 mW (see note 1) Ambient tem- perature Operating Topr –25 °C to 85°C Storage Tstg –30° C to 100°C Soldering temperature Tsol 260 °C (see note 3) Item Symbol Value Condition Emitter Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. V R = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Detector Light current IL 0.4 mA min. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated volt- age V Peak spectral sensitivity wave- length λ P 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μ s typ. V CC = 5 V, RL = 100 Ω, IL = 5 mA Be sure to read Precautions on page 25.

EE-SX1140 Photomicrosensor (Transmissive) 85 ■ Engineering Data 10 20 30 40 50 Forward Current vs. Collector Dissipation Temperature Rating Forward Current vs. Forward Voltage Characteristics (Typical) Light Current vs. Forward Current Characteristics (Typical) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Dark Current vs. Ambient Temperature Characteristics (Typical) Distance d (mm) Sensing Position Characteristics (Typical) Response Time Measurement Circuit Ambient temperature Ta (°C) Collector dissipation PC (mW) Forward voltage VF (V) Forward current IF (mA) Forward current IF (mA) Forward current IF (mA) Light current IL (mA) Collector−Emitter voltage VCE (V) Light current IL (mA) Ambient temperature Ta (°C) Load resistance RL (kΩ) Ta = −30°C Ta = 25°C Ta = 70°C Ta = 25°C VCE = 10 V IF = 40 mA IF = 30 mA IF = 20 mA IF = 10 mA Ta = 25°C VCE = 10 V 0 lxIF = 20 mA VCE = 5 V IF = 20 mA VCE = 10 V Ta = 25°C VCC = 5 V Ta = 25°C Response time tr, tf (μs) Relative light current IL (%) Dark current ID (nA) Relative light current IL (%) IF = 50 mA Ambient temperature Ta (°C) −40 −20 0 20 40 60 80 100 150 100 PC IF 0123456789 1 0 120 110 100 60−40 −20 0 20 40 60 80 100 10,000 1,000 100 0.1 0.01 0.001 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 10,000 0.01 tr tf 0.1 101 1,000 100 100 d 120 (Center of optical axis) 90% 10% t t ft r t Input Output VCC RL Input Output IL Relative Light Current vs. Ambi- ent Temperature Characteristics (Typical) Response Time vs. Load Resist- ance Characteristics (Typical) Distance d (mm) Sensing Position Characteristics (Typical)Relative light current IL (%) 100 120 d IF = 20 mA VCE = 10 V Ta = 25°C (Center of optical axis)