ECS640A ONSEMI | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
Features
- Arm Cortex−M0+ (Nebo−40−64) ♦ 40 MHz Clock Frequency ♦ 8 kB RAM Memory ♦ 64 kB Flash Memory
- 600 V Gate Driver (FAN73896) ♦ 350 mA/650 mA Sourcing/Sinking Current Driving Capability
- 4 Sense Amps for Current Sensing (NCS20034)
- Integrated Bootstrap Diodes
- Communication: I2C, UART and SPI
- Firmware Available, Sensorless Direct Torque and Flux Control
- Max Power Dissipation: 1.8 W
- Temperature Range: −40 to 105°C
- These are Pb−Free Devices Typical Applications
- Three−Phase Brushless DC (BLDC) Sensorless Motor Control
- Three−Phase Brushless DC (BLDC) Sensor Based Motor Control See detailed ordering and shipping information on page 12 of this data sheet.
ORDERING INFORMATION
XXXXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week /C0071 = Logo(s) XXXXXXXX AWLYWW /C0071 End Products
- HV AC
- Home Appliances: Refrigerators, Fabric Care, Dishwashers
- Pumps
- General Purpose Three−Phase Motor Control Safety Mechanisms Highlight
- Over−Current Shutdown Turns Off All Six Channels This document contains information on a product under development. onsemi reserves the right to change or discontinue this product without notice.
Figure 1. Block Diagram
Figure 2. Application Schematic
120 Vac
51 HO2
50 VS2
49 VB3
48 HO3
46 GD_SUPPLY/VDD
45 LO1
44 LO2
47 VS3
43 LO3
62 HALL_U
63 HALL_V
64 HALL_W
34 SENSE_1+
35 SENSE_1−
36 SENSE_1_OUT
39 GD_RC_IN
28 SENSE_4−
29 SENSE_4_OUT/VREF
30 SENSE_2_OUT
31 SENSE_2−
32 SENSE_2+
22 U_SENSE
23 SENSE_3_OUT
24 SENSE_3−
25 SENSE_3+
27 SENSE_4+
26 VLS
20 W_SENSE
21 V_SENSE
40 VSS
41 GD_CO M
61 VLS
58 GPIO21
59 GPIO20
56 VB1
54 VS1
55 HO1
53 VB2
60 DVSS
19 NC 65 NC
57 GD_SUPPLY/VDD
33 DVSS
38 GD_cs
37 GD_FO
Figure 3. Pin Connections
1 NC −
2 GPIO16 General Purpose IO (Nebo40−64 PC0 I/O)
3 GPIO8 / UART1_TX General Purpose IO / UART Transmit (Nebo40−64 PB0 I/O)
4 GPIO9 / UART1_RX / I2C_D General Purpose IO / UART Receive / I2C (Nebo40−64 PB1 I/O)
5 I2C_C I2C (Nebo40−64 PB2 I/O)
6 PWM_IN PWM Input Signal (Nebo40−64 PB3 I/O)
7 UART0_TX UART Transmit (Nebo40−64 PB4 I/O)
8 UART0_RX UART Receive (Nebo40−64 PB5 I/O)
9 SWDIO Single Wire Interface Data (Nebo40−64 PB6 I/O)
10 SWCLK Single Wire Interface Clock (Nebo40−64 PB7 I/O)
11 DBG_EN Debug Enable (Nebo40−64 DBG_EN)
12 RESETN /C0109C Reset (Nebo40−64 RESETN)
13 DVSS Ground
www.onsemi.com PIN FUNCTION DESCRIPTION (continued) Pin # DescriptionPin Name
15 AVDD Analog Reference Voltage Out
16 TEMP_IN / GP_A_1 General Analog Input or Temperature Sensor Input (Nebo40−64 PA0 I/O)
17 Mtr_Neutral / GP_A_0 Motor Center Tap Input or Bus Voltage Input (Nebo40−64 PA1 I/O)
18 NC −
19 NC −
20 W_SENSE Back EMF Sense Pin − Phase W (requires reduction and filtering)
(Nebo40−64 PA2 I/O)
21 V_SENSE Back EMF Sense Pin − Phase V (requires reduction and filtering)
(Nebo40−64 PA3 I/O)
22 U_SENSE Back EMF Sense Pin − Phase U (requires reduction and filtering)
(Nebo40−64 PA4 I/O)
23 SENSE_3_OUT Amplifier 3 Output (Nebo40−64 PA5 I/O)
24 SENSE_3− Amplifier 3−
25 SENSE_3+ Amplifier 3+
26 VLS 3.3 V Supply for Amplifier
27 SENSE_4+ Amplifier 4+
28 SENSE_4− Amplifier 4−
29 SENSE_4_OUT / VREF Sense Amplifier can be used for voltage reference
30 SENSE_2_OUT Amplifier 2 Output (Nebo40−64 PA7 I/O)
31 SENSE_2− Amplifier 2+
32 SENSE_2+ Amplifier 2−
33 DVSS Amplifier VSS
34 SENSE_1+ Amplifier 1+
35 SENSE_1− Amplifier 1−
36 SENSE_1_OUT Amplifier 1 Output (Nebo40−64 PA6 I/O)
37 GD_FO Fault output (Nebo40−64 PC6 I/O) (FAN73896 FO output)
38 GD_CS Analog input for over−current shutdown (FAN73896 CS input)
39 GD_RC_IN External RC network input used to define the fault−clear delay
40 VSS Gate Driver VSS
41 GD_COM Gate Driver Low Side Common
42 NC −
43 LO3 Low−Side Gate Driver 3 Output
44 LO2 Low−Side Gate Driver 2 Output
45 LO1 Low−Side Gate Driver 1 Output
46 GD_Supply / VDD 15 V supply for Gate Driver
47 VS3 High−Side Driver 3 Floating Supply Offset Voltage
48 HO3 High−Side Driver 3 Gate Driver Output
49 VB3 High−Side Supply 3 Floating Supply
50 VS2 High−Side Driver 2 Floating Supply Offset Voltage
51 HO2 High−Side Driver 2 Gate Driver Output
52 NC −
53 VB2 High−Side Driver 2 Floating Supply
54 VS1 High−Side Driver 1 Floating Supply Offset Voltage
55 HO1 High−Side Driver 1 Gate Driver Output
56 VB1 High−Side Driver 1 Floating Supply
57 GD_Supply / VDD 15 V Supply for Gate Driver
www.onsemi.com PIN FUNCTION DESCRIPTION (continued) Pin # DescriptionPin Name
58 GPIO21 General Purpose IO (Nebo40−64 PC5 I/O)
59 GPIO20 General Purpose IO (Nebo40−64 PC4 I/O)
60 DVSS Ground
61 VLS 3.3 V Supply for Micro−Controller
62 HALL_U Hall Sensor Input U (Nebo40−64 PC3 I/O)
63 HALL_V Hall Sensor Input V (Nebo40−64 PC2 I/O)
64 HALL_W Hall Sensor Input W (Nebo40−64 PC1 I/O)
65 NC −
Exposed Thermal Pads See recommended mounting footprint. MAXIMUM RATINGS Rating Symbol Minimum Maximum Unit Primary Supply Voltage − MCU VLS −0.3 3.6 V Ground Voltage DVSS −0.3 − V Input Voltage Range (Note 1) VIN DVSS − 0.3 VDD + 0.3 V Input Pin Current – MCU IIN −10 10 mA Power Dissipation PD − 1.8 W Ambient Temperature TA −40 105 °C Storage Temperature Range TSTG −55 150 °C GATE DRIVER High−Side Floating Offset Voltage VS VB1,2,3 − 25 VB1,2,3 + 0.3 V High−Side Floating Supply Voltage VB −0.3 625.0 V Low−Side and Logic−Fixed Supply Voltage VDD −0.3 25.0 V High−Side Floating Output Voltage VHO1,2,3 VHO VS1,2,3 − 25 VS1,2,3 + 0.3 V Low−Side Floating Output Voltage VLO1,2,3 VLO −0.3 VDD + 0.3 V Input Voltage VIN −0.3 5.5 V Fault Output Voltage (FO) VFO −0.3 VDD + 0.3 V High−Side Input Pulse Width PWHIN 500 − Ns Allowable Offset Voltage Slew Rate dVs/dt − ±50 V/ns BOOTSTRAP DIODE Maximum Repetitive Reverse Voltage VRRM − 600 V Forward Current IF − 0.50 A Forward Current (Peak) IFP − 1.50 A CURRENT SENSOR AMPLIFIER Supply Voltage (VDD – VSS) VDD (Pin33) −0.3 3.6 V ESD Capability, Human Body Model (Note 2) VHBM − ≥2000 V ESD Capability, Charged Device Model (Note 2) VCDM − ≥1000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating: ≤150 mA per JEDEC standard: JESD78
www.onsemi.com THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Resistance – Junction to Ambient (Note 4) /C0081JA 24.6 °C/W Thermal Resistance – Junction to Case /C0081JC 4.9 °C/W 3. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 4. Values based on copper area of 645 mm 2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Input Supply Voltage VLS 3.0 3.6 V Ambient Temperature TA −40 85 °C GATE DRIVER High−Side Floating Supply Voltage VB1,2,3 Vs1,2,3 + 10 Vs1,2,3 + 20 V High−Side Floating Supply Offset Voltage Vs1,2,3 6 – VDD 600 V Low−Side and Logic Fixed Supply Voltage VDD 12 20 V High−Side Output Voltage VHO1,2,3 Vs1,2,3 VB1,2,3 V Low−Side Output Voltage VLO1,2,3 COM VDD V Fault Output Voltage (FO) VFO VSS VDD V Current−Sense Pin Input Voltage VCS VSS 5 V Logic Input Voltage (HIN1,2,3 and LIN1,2,3) VIN VSS 5 V Low−Side Driver Return COM −5 5 V BOOTSTRAP DIODE Forward Voltage VF − − V Reverse−Recovery Time trr − − ns CURRENT SENSOR AMPLIFIER Operating Supply Voltage (VDD – VSS) Vs 1.8 3.6 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
Parameter Test Conditions Symbol Min Typ Max Unit MCUVDDIO = 3.3 V, TA = 30/C0053C Digital I/O Logic Input Low Threshold VIL 0.3 − − VDD Logic Input High Threshold VIH − − 0.7 VDD Internal Pull−up Resistor RPU 35 − − k/C0087 Internal Pull−down Resistor RPD 35 − − k/C0087 Logic Output Low Level ILOAD = 4 mA at VDDIO = 1.8 V VOL − − 0.5 V Logic Output High Level ILOAD = 4 mA at VDDIO = 1.8 V VOH VDD − 0.5 − − V Pin Leakage ILEAK −1 − 1 /C0109A Flash Memory Read Access Time TACC − − 40 ns Program Time TPROG − − 20 /C0109s Page/Mass Erase Time TERASE − − 10 ms Data Retention TRET 10 − − Years
www.onsemi.com ELECTRICAL CHARACTERISTICS (continued) Parameter UnitMaxTypMinSymbolTest Conditions Flash Memory Flash Endurance Erase Cycles at 25°C 100k − − Cycles at 85°C 10k − − Power−On RESET and BROWN−OUT Power−on Voltage Trip Point Rising VPOR_R 1.540 − 1.635 V Falling VPOR_F 1.455 − 1.635 Brownout Trip Point Rising VBO_R 1.525 − 1.71 V Falling VBO_F 1.5 − 1.685 High Speed RC Oscillator (HSOSC) Oscillator Frequency 40 MHz FHSOSC 38.80 40.00 41.20 MHz Temperature Drift Temp Co = +3% Cold and –3% Hot /C0068FHSOSC − ±3% − Oscillator Start−up Time THSOSC_SU − 2 − /C0109s Current Consumption IHSOSC − 350 − /C0109A Low Power RC Oscillator (LPOSC) Oscillator Frequency (Fast Mode) Trimmed FLPOSC − 10.24 − kHz Oscillator Frequency (Slow Mode) Trimmed FLPOSC 640 − Hz Temperature Drift /C0068FLPOSC − ±6% − Oscillator Start−up Time (Fast Mode) TLPOSC_SU − 0.41 − ms Oscillator Start−up Time (Slow Mode) TLPOSC_SU − 1.4 − ms Current Consumption (Fast Mode) ILPOSC − 420 − nA Current Consumption (Slow Mode) ILPOSC − 95 − nA High Speed Crystal Oscillator Crystal Frequency FHSXTAL 8 32 40 MHz Low Power Crystal Oscillator Crystal Frequency FLPXTAL − 32.768 − kHz Current Consumption ILPXTAL − 285 − nA Analog Comparators Common Mode Input Range VCMIR 0.2 − VDDIO − 0.5 V Response Time TCOMP − 200 − ns Analog to Digital Converter (ADC) Sample Clock Frequency FADCCLK 0.01 − 20 MHz −0.5dBFS Power Bandwidth FBW 50 − − kHz Input Capacitance (when 1:1 divider is selected (single−ended)) (Note 5) CIN − 2 − pF Gain Error (Note 6) EGAIN − ±0.75 − % Offset Error (Note 6) EOFFSET − ±15 − LSB
www.onsemi.com ELECTRICAL CHARACTERISTICS (continued) Parameter UnitMaxTypMinSymbolTest Conditions Analog to Digital Converter (ADC) Integral Non−Linearity (Note 7) Differential, gain bypass,
1 V reference
INL −2.5 − 2.5 LSB Differential, 1X gain, 1 V reference − ±2.5 − Differential, 10X gain, 1 V reference − ±3.5 − Differential, 1/4 gain, 1 V reference − ±2 − Single−ended, 1X gain,
1 V reference, 2X Vref Range
(Note x6) − ±2 − Differential Non−Linearity (Note 7) Differential, gain bypass, DNL − − 1.5 LSB Differential, 1X gain, 1 V reference − 1.5 − Differential, 10X gain, 1 V reference − 2.0 − Differential, 1/4 gain, 1 V reference − 1.5 − Single−ended, 1X gain, (Note x6) − 1.5 − GATE DRIVER Low−Side Power Supply Section Quiescent VDD Supply Current VLIN1,2,3 = 0 V or 5 V, EN = 0 V IQDD − 250 400 /C0109A Operating VDD Supply Current CLOAD = 1 Nf, fLIN1,2,3 = 20 kHz, rms Value IPDD − 550 750 /C0109A VDD Supply Under−Voltage Positive−Going Threshold VDD = Sweep VDDUV+ 9.7 11.0 12.0 V VDD Supply Under−Voltage Negative−Going Threshold VDD = Sweep VDDUV− 9.2 10.5 11.4 V VDD Supply Under−Voltage Lockout Hysteresis VDD = Sweep VDDHYS − 0.5 − V Bootstrapped Power Supply Section VBS Supply Under−Voltage Positive−Going Threshold VBS1,2,3 = Sweep VBSUV+ 9.7 11.0 12.0 V VBS Supply Under−Voltage Negative−Going Threshold VBS1,2,3 = Sweep VBSUV− 9.2 10.5 11.4 V VBS Supply Under−Voltage Lockout Hysteresis VBS1,2,3 = Sweep VBSHYS − 0.5 − V Offset Supply Leakage Current VS1,2,3 = VS1,2,3 = 600 V ILK − − 10 /C0109A Quiescent VBS Supply Current VHIN1,2,3 = 0 V or 5 V, EN = 0 V IQBS 10 50 80 /C0109A Operating VBS Supply Current CLOAD = 1 nF, fHIN1,2,3 = 20 kHz, rms Value IPBS 200 320 480 /C0109A Gate Driver Output Section High−Level Output Voltage, VBIAS − VO IO = 0 mA (No Load) VOH − − 100 MV Low/C0042Level Output Voltage, VO IO = 0 mA (No Load) VOL − − 100 mV Output HIGH Short−Circuit Pulse Current VO = 15 V, VIN = 0 V with PW ≤ 10 /C0109s IO+ 250 350 − mA Output LOW Short−Circuit Pulsed Current VO = 0 V, VIN = 5 V with PW ≤ 10 /C0109s IO− 500 650 − mA Allowable Negative VS Pin Voltage for HIN Signal Propagation to HO VS − −9.8 −9.0 V
www.onsemi.com ELECTRICAL CHARACTERISTICS (continued) Parameter UnitMaxTypMinSymbolTest Conditions Logic Input Section Logic “1” Input Voltage HIN1,2,3, LIN1,2,3 VIH 2.5 − − V Logic “0” Input Voltage HIN1,2,3, LIN1,2,3 VIL − − 0.8 V Logic Input Bias Current (HO = LO = HIGH) VIN = 5 V IIN+ 77 100 143 /C0109A Logic Input Bias Current (HO = LO = LOW) VIN = 0 V IIN− − − 2 /C0109A Logic Input Pull−Up Resistance RIN 35 50 65 k/C0087 Enable Control Section (EN) Enable Positive−Going Threshold Voltage VEN+ 2.5 − − V Enable Negative−Going Threshold Voltage VEN− − − 0.8 V Logic Enable “1” Input Bias Current VEN = 5 V (Pull−Down = 150 k/C0087) IEN+ 15 33 50 /C0109A Logic Enable “0” Input Bias Current VEN = 0 V IEN− − − 2 /C0109A Logic Input Pull−Down Resistance REN 100 150 333 k/C0087 Over−Current Protection Section Over−Current Detect Positive Threshold VCSTH+ 450 500 550 MV Over−Current Detect Negative Threshold VCSTH− − 440 − mV Over−Current Detect Hysteresis VCSHYS − 60 − mV Short−Circuit Input Current VCSIN = 1 V ICSIN 5 10 15 /C0109A Soft Turn−Off Sink Current ISOFT 25 40 55 mA Fault Output Section RCIN Positive−Going Threshold Voltage VRCINTH+ 2.7 3.3 3.9 V RCIN Negative−Going Threshold Voltage VRCINTH− − 2.6 − V RCIN Hysteresis Voltage VRCINHYS − 0.7 − V RCIN Internal Current Source CRCIN = 2 nF IRCIN 3 5 7 /C0109A Fault Output Low Level Voltage VCS = 1 V, IFO = 1.5 mA VFOL − 0.2 0.5 V RCIN On Resistance IRCIN = 1.5 mA RDSRCIN 50 75 100 /C0087 Fault Output On Resistance IFO = 1.5 mA RDSFO 90 130 170 /C0087 Turn−On Propagation Delay VLIN1,2,3 = VHIN1,2,3 = 5 V, VS1,2,3 = 0 V tON 350 500 650 ns Turn−Off Propagation Delay VLIN1,2,3 = VHIN1,2,3 = 0 V, VS1,2,3 = 0 V tOFF 350 500 650 ns Turn−On Rise Time VLIN1,2,3 = VHIN1,2,3 = 5 V tR 20 50 100 ns Turn−Off Fall Time VLIN1,2,3 = VHIN1,2,3 = 0 V tF 10 30 80 ns Enable LOW to Output Shutdown Delay tEN 400 500 600 ns CS Pin Leading−Edge Blanking Time tCSBLT 400 650 850 ns Time from CS Triggering to FO From VCSC = 1 V to FO Turn−Off tCSFO − 850 1300 ns
www.onsemi.com ELECTRICAL CHARACTERISTICS (continued) Parameter UnitMaxTypMinSymbolTest Conditions Fault Output Section Time from CS Triggering to Low−Side Gate Outputs Turn−Off From VCSC = 1 V to Starting Gate Turn−Off tCSOFF − 850 1300 ns Input Filtering Time (Note 7) (HINx, LINx, EN) tFLTIN 170 250 330 ns Fault−Clear Time tFLTCLR − 1.3 2.35 ns Dead Time DT 230 320 400 ns Dead−Time Matching (All Six Channels) (Note 8) MDT − − 50 ns Delay Matching (All Six Channels) (Note 9) MT − − 50 ns Output Pulse−Width Matching (Note 10) PWIN > 1 /C0109s PM − 50 100 ns BOOTSTRAP DIODES Forward Voltage IF = 0.1 A, TA = 25°C VF − 2.5 − V Reverse−Recovery Time IF = 0.1 A, TA = 25°C trr − 80 − ns CURRENT SENSOR AMPLIFIER (VS = 1.8 V, TA = +25°C) Input Characteristics Input Offset Voltage VOS − − 5.0 mV Offset Voltage Drift /C0068VOS//C0068T − 2.0 6.0 /C0109V/°C Input Bias Current IIB − 1 − pA Input Offset Current IOS − 1 − pA Channel Separation XTLK − 100 − dB Input Resistance RIN − 1 − T/C0087 Input Capacitance CIN − 1.2 − pF Common Mode Rejection Ratio VIN = VSS to VDD – 0.6 V CMRR 70 80 − dB VIN = VSS + 0.2 V to VDD – 0.6 V 65 − − Output Characteristics Open Loop Voltage Gain RL = 10 k/C0087 AVOL 75 92 − dB RL = 2 k/C0087 70 92 − Output Current Capability Sourcing ISC 5 8 − mA Sinking 10 14 − Output Voltage High RL = 10 k/C0087 VOH 1.75 1.798 − V RL = 2 k/C0087 1.7 1.78 − Output Voltage Low RL = 10 k/C0087 VOL − 7 100 mV RL = 2 k/C0087 − 20 100 Noise Performance Voltage Noise Density f = 1 kHz eN − 20 − nV/ Current Noise Density f = 1 kHz iN − 0.1 − pA/ Dynamic Performance Gain Bandwidth Product GBWP − 5 − MHz Slew Rate at Unity Gain Rising Edge, RL = 2 k/C0087, AV = +1 SR − 6 − V//C0109s Falling Edge, RL = 2 k/C0087, AV = +1 − 9 − Phase Margin RL = 10 k/C0087, CL = 5 pF /C0089m − 53 − ° Gain Margin RL = 10 k/C0087, CL = 5 pF Am − 8 − dB Settling Time VO = 1 Vpp, Gain = 1, CL = 20 pF, Settling time to 0.1% ts − 1.8 − /C0109s
www.onsemi.com ELECTRICAL CHARACTERISTICS (continued) Parameter UnitMaxTypMinSymbolTest Conditions Dynamic Performance Total Harmonics Distortion + Noise VO = 1 Vpp, RL = 2 k/C0087, AV = +1, f = 1 kHz THD+N − 0.005 − % VO = 1 Vpp, RL = 2 k/C0087, AV = +1, f = 10 kHz − 0.025 − Power Supply Power Supply Rejection Ratio PSRR 80 100 − dB Quiescent Current No load, per channel IDD − 275 575 /C0109A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 6. Values based on copper area of 645 mm 2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. 7. The minimum width of the input pulse should exceed 500 ns to ensure the filtering time of the input filter is exceeded. 8. MDT is defined as |DT1 −DT2| referenced to 0. 9. MT is defined as an absolute value of matching delay time between High −side and Low−side. 10.PM is defined as an absolute value of matching pulse−width between Input and Output. Device Package Shipping† NFMECS640A0 WQFN65 13 × 10, 0.5P (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
www.onsemi.com PACKAGE DIMENSIONS GAQFN65 13x10, 0.5P CASE 510CT ISSUE C onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Arm, Cortex, and the Arm logo are registered trademarks of Arm Limited (or its subsidiaries) in the EU and/or elsewhere. LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative