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Technical content

Features

  • ON-resistance Nch: R DS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.)
  • The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting
  • 4V drive
  • Halogen free compliance
  • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage V DSS 30 - -30 V Gate-to-Source Voltage V GSS ±20 ±20 V Drain Current (DC) I D 7 - -5.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 40 - -40 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1unit 1.3 W Total Dissipation P T When mounted on ceramic substrate (900mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-001 Product & Package Information
  • Package : ECH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection TG LOT No. 876 5 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View TL ECH8661-TL-H 51612 TKIM/72110PE TKIM TC-00002431 No. A1777-1/9 http://onsemi.com Semiconductor Components Industries, LLC, 2013 July, 2013 ECH8661 Power MOSFET 30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [N-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=3.5A 3.7 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=3.5A, VGS=10V 18 24 m Ω RDS(on)2 I D=2A, VGS=4.5V 29 41 m Ω RDS(on)3 I D=2A, VGS=4V 39 55 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 710 pF Output Capacitance Coss V DS=10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 72 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 10 ns Rise Time tr 25 ns Turn-OFF Delay Time td(off) 43 ns Fall Time tf 25 ns Total Gate Charge Qg VDS=15V, VGS=10V, ID=7A 11.8 nC Gate-to-Source Charge Qgs 2.4 nC Gate-to-Drain “Miller” Charge Qgd 2.0 nC Diode Forward Voltage VSD IS=7A, VGS=0V 0.79 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -30 V Zero-Gate Voltage Drain Current I DSS V DS=- -30V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -2.5A 5.2 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -2.5A, VGS=- -10V 30 39 mΩ RDS(on)2 I D=- -1.5A, VGS=- -4.5V 55 77 mΩ RDS(on)3 I D=- -1.5A, VGS=- -4V 58 82 mΩ Input Capacitance Ciss VDS=- -10V, f=1MHz 600 pF Output Capacitance Coss 145 pF Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 7.2 ns Rise Time tr 23 ns Turn-OFF Delay Time td(off) 63 ns Fall Time tf 42 ns Total Gate Charge Qg VDS=- -15V, VGS=- -10V, ID=- -5.5A 13 nC Gate-to-Source Charge Qgs 1.8 nC Gate-to-Drain “Miller” Charge Qgd 3.2 nC Diode Forward Voltage VSD IS=- -5.5A, VGS=0V - -0.82 - -1.2 V ECH8661 No. A1777-2/9

Switching Time Test Circuit [N-channel] [P-channel]

Ordering Information

Device Package Shipping memo ECH8661-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IT13725 IT13723 IT13724 1061 428 41 2 1 6 VDS=10V --25 Ta=75 °CVGS=3.0V 3.5V4.0V Ta=25°C IT13726 --60 --40 --20 0 20 40 60 80 100 120 140 160 8.0V 10.0V 16.0V VGS=4.5V , ID=2.0A VGS=10.0V , ID=3.5A VGS=4.0V , ID=2.0A 4.5V6.0V ID=2A 3.5A [Nch] [Nch] [Nch] [Nch] PW=10μs D.C.≤1% P. G 50Ω G S D ID=3.5A RL=4.3Ω VDD=15V VOUT VIN 10V VIN ECH8661 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --2.5A RL=6Ω VDD= --15V VOUT VIN --10V VIN ECH8661 ECH8661 No. A1777-3/9

Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A 0123456789 1 0 1 1 1 2 IT15732 IT15731 VDS=15V ID=7A 0.1 1.0 0.01 0.01 0.1 5723 2 1.05732 105732 3 5 Operation in this area is limited by RDS(on). 100μs 100msDC operation ( Ta=25 °C) 10ms 1ms 100 IDP=40A (PW≤10μs) ID=7A 100 1000 100 0.1 2 1.0 1035 7 IT13729 IT13727 IT13728 0 5 10 25 15 20 30 0.01 0.1 1.0 IT13730 0.1 1.0 0.1 20.01 5723 1.0 22573 Ta= --25 75°C 25°C VDS=10V --25 Ta=75 VGS=0V VDD=15V VGS=10V td(off) tr tf Ciss Coss Crss f=1MHz 10573 22 33 57 td(on) [Nch] [Nch] [Nch] [Nch] [Nch] [Nch] --2 --1 --9 --3 --4 --6 --7 --5 --8 --0.5 --1.0 --2.0 --2.5 --1.5 --3.0 IT14855 IT14856 Ta=75 --25 VGS= --2.5V VDS= --10V --3.0V--3.5V --18.0V --10.0V --4.0V --6.0V --4.5V [Pch] [Pch] Ta=25°C Single pulse When mounted on ceramic substrate (900mm 2×0.8mm) 1unit ECH8661 No. A1777-4/9

--1 --2 --3 --4 --5 --6 --7 --8 --10 --9 131 2468 1 0 1 2 VDS= --10V ID= --5.5A IT15733 IT15729 --60 100 --40 --20 0 20 40 60 80 100 120 140 160 VGS= --4.5V , I D= --1.5A VGS= --10.0V , I D= --2.5A IT15728 120 --2 160 --4 200 100 140 180 ID= --1.5A --2.5A IT15727 --20--5 1000 100 --15--10 --25 --30 f=1MHz IT14862 Ciss Coss Crss --0.1 100 --1.0222 35 7 --1035 7 IT14861 td(on) tr VDD= --15V VGS= --10V tf td(off) --0.001 --0.01 --1.0 --0.1 VGS=0V --0.01 0.1 --0.123 5 7 2 --1.035 7 2 1.0 VDS= --10V IT14859 IT14860 Ta= --25 --25 Ta=75 °C25°C 75°C VGS= --4.0V , I D= --1.5A 35 7 --10 --0.01 --0.1 --1.0 22 35 7 --1.0 235 35 7 --10--0.1 ID= --5.5A IDP= --40A (PW≤10μs) Operation in this area is limited by RDS(on). 100ms 10ms 1ms 100μs DC operation ( Ta=25 °C) --10 --100 [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] [Pch] Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ta=25°C Single pulse When mounted on ceramic substrate (900mm 2×0.8mm) 1unit Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V ECH8661 No. A1777-5/9

1.6 1.5 0.4 1.2 0.8 1.4 1.3 0.2 1.0 0.6 1.8 140100 120 160 IT15730 [Nch/Pch]PD -- Ta Allowable Power Dissipation, PD -- W 1unit Total Dissipation Ambient Temperature, Ta -- °C ECH8661 No. A1777-6/9

Embossed Taping Specifi cation ECH8661-TL-H ECH8661 No. A1777-7/9

Outline Drawing Land Pattern Example ECH8661-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65 ECH8661 No. A1777-8/9

Note on usage : Since the ECH8661 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ECH8661 PS No. A1777-9/9