ECH8660

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Document overview

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Technical content

Features

• The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting
• 4V drive
• Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage V DSS 30 - -30 V Gate-to-Source Voltage V GSS ±20 ±20 V Drain Current (DC) I D 4.5 - -4.5 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 30 - -30 A Allowable Power Dissipation P D When mounted on ceramic substrate (1200mm ×0.8mm) 1unit 1.3 W Total Dissipation P T When mounted on ceramic substrate (1200mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-001 Product & Package Information
• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 876 5 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View TL ECH8660-TL-H TF Lot No. 42512 TKIM/D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/8 http://onsemi.com Semiconductor Components Industries, LLC, 2013 July, 2013 ECH8660 Power MOSFET 30V, 4.5A, 59mΩ, –30V, –4.5A, 59mΩ, Complementary Dual ECH8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [N-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=2A 1 1.66 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=2A, VGS=10V 45 59 m Ω RDS(on)2 I D=1A, VGS=4.5V 85 119 m Ω RDS(on)3 I D=1A, VGS=4V 110 155 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 240 pF Output Capacitance Coss V DS=10V, f=1MHz 45 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 30 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 6.2 ns Rise Time tr See speci fi ed Test Circuit. 11 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 17 ns Fall Time tf See specifi ed Test Circuit. 7.5 ns Total Gate Charge Qg V DS=10V, VGS=10V, ID=4.5A 4.4 nC Gate-to-Source Charge Qgs V DS=10V, VGS=10V, ID=4.5A 1.1 nC Gate-to-Drain “Miller” Charge Qgd V DS=10V, VGS=10V, ID=4.5A 0.64 nC Diode Forward Voltage VSD IS=4.5A, VGS=0V 0.84 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -30 V Zero-Gate Voltage Drain Current I DSS V DS=- -30V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.3 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -2A 2.5 4.2 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -2A, VGS=- -10V 45 59 mΩ RDS(on)2 I D=- -1A, VGS=- -4.5V 71 100 mΩ RDS(on)3 I D=- -1A, VGS=- -4V 82 115 mΩ Input Capacitance Ciss V DS=- -10V, f=1MHz 430 pF Output Capacitance Coss V DS=- -10V, f=1MHz 105 pF Reverse Transfer Capacitance Crss V DS=- -10V, f=1MHz 75 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 7.5 ns Rise Time tr See speci fi ed Test Circuit. 26 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 45 ns Fall Time tf See specifi ed Test Circuit. 35 ns Total Gate Charge Qg V DS=- -10V, VGS=- -10V, ID=- -4.5A 10 nC Gate-to-Source Charge Qgs V DS=- -10V, VGS=- -10V, ID=- -4.5A 2.0 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -10V, VGS=- -10V, ID=- -4.5A 2.5 nC Diode Forward Voltage VSD IS=- -4.5A, VGS=0V - -0.85 - -1.2 V Switching Time Test Circuit [N-channel] [P-channel] PW=10μs D.C.≤1% P. G 50Ω G S D ID=2A RL=7.5Ω VDD=15V VOUT VIN 10V VIN ECH8660 PW=10μs D.C.≤1% P. G 50Ω G S D ID= --2A RL=7.5Ω VDD= --15V VOUT VIN --10V VIN ECH8660 ECH8660 No. A1358-2/8

Ordering Information

Device Package Shipping memo ECH8660-TL-H ECH8 3,000pcs./reel Pb-Free and Halogen Free ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A [Nch][Nch] 1.5 0.5 2.5 3.0 1.0 2.0 3.5 4.0 IT14210 IT14211 VDS=10V --25 Ta=75 VGS=3.0V 3.5V 4.0V 4.5V15.0V 6.0V10.0V Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S [Nch][Nch] [Nch][Nch] 0.01 0.1 1.0 --60 --40 --20 0 20 40 60 80 100 120 140 160 160 200 120 VGS=4.0V , ID=1A VGS=10.0V , ID=2A VGS=4.5V , ID=1A IT16223 Ta=25°C IT14213 IT14214 IT14215 Ta= --25 75°C 25°C VDS=10V --25 Ta=75 VGS=0V ID=1A 0 2 10 12 8641 4 1 6 160 120 240 200 0.1 1.0 20.01 0.1 25732 1.05735 7 3 ECH8660 No. A1358-3/8

Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A 0.1 1.0 0.01 0.1 2 1.05732 105732 3 5 Operation in this area is limited by RDS(on). 100msDC operation (Ta=25° 10ms IDP=30A ID=4.5A 100μs1ms [Nch][Nch] PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (1200mm 2×0.8mm) IT14195 012345 IT14218 VDS=10V ID=4.5A Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --60 --40 --20 0 20 40 60 80 100 120 140 160 100 140 160 120 VGS= --4.0 V, ID= --1A VGS= --10.0V , ID= --2A VGS= --4.5V , I D= --1A IT16224 Ta=25°C IT14189 ID= --1A --2A 140 120 100 180 160 [Pch] [Pch] [Pch] [Pch] ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A --1.5 --0.5 --2.5 --3.0 --1.0 --2.0 --3.5 --4.0 IT14186 IT14187 --1 --4 --2 --5 --3 --6 VDS= --10V --25 Ta=75 VGS= --2.5V --3.0V --3.5V --4.0V --10.0V --4.5V --6.0V SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF [Nch][Nch] 1.0 0.1 2 1.035 7 IT14216 VDD=15V VGS=10V td(off) tr tf 1023 5 7 td(on) 100 3051 5 2 0 2 510 IT14217 f=1MHz Ciss Coss Crss ECH8660 No. A1358-4/8

Switching Time, SW Time -- ns Drain Current, ID -- A Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF 100 --0.1 2 --1.035 7 IT14192 VDD= --15V VGS= --10V td(off) tr tf --1023 5 7 td(on) 100 1000 IT14193 f=1MHz Ciss Coss Crss [Pch] [Pch] IT14197 IT14196 PD -- Ta Allowable Power Dissipation, PD -- W 20 40 0.4 60 80 100 120 140 160 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 1.5 1.3 1unit Total Dissipation When mounted on ceramic substrate (1200mm2×0.8mm) Ambient Temperature, Ta -- °C A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A --0.1 --1.0 --0.01 Operation in this area is limited by RDS(on). 100msDC operation (Ta=25° 10ms --10 IDP= --30A ID= --4.5A 100μs1ms [Pch] [Nch/Pch] PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (1200mm 2×0.8mm) Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V [Pch] 01234 6 8 57 1 0 91 1 --1 --2 --3 --4 --5 --6 --7 --8 --10 --9 IT14194 VDS= --10V ID= --4.5A IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S --0.01 --0.1 --1.0 --10 IT14190 IT14191 Ta= --25 75°C 25°C VDS= --10V --25 Ta=75 VGS=0V 0.01 0.1 1.0 [Pch] [Pch] ECH8660 No. A1358-5/8

Embossed Taping Specifi cation ECH8660-TL-H ECH8660 No. A1358-6/8

Outline Drawing Land Pattern Example ECH8660-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65 ECH8660 No. A1358-7/8

Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ECH8660 PS No. A1358-8/8