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Technical content

Features

  • 4V drive
  • Composite type, facilitating high-density mounting
  • Halogen free compliance
  • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 7A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 40 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1unit 1.3 W Total Dissipation P T When mounted on ceramic substrate (900mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-001 Product & Package Information
  • Package : ECH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View TL ECH8659-TL-H TE Lot No. 53012 TKIM/61808PA TIIM TC-00001318 No. A1224-1/7 http://onsemi.com Semiconductor Components Industries, LLC, 2013 July, 2013 ECH8659 N-Channel Power MOSFET 30V, 7A, 24mΩ, Dual ECH8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=3.5A 2.2 3.7 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=3.5A, VGS=10V 18 24 m Ω RDS(on)2 I D=2A, VGS=4.5V 29 41 m Ω RDS(on)3 I D=2A, VGS=4V 39 55 m Ω Input Capacitance Ciss V DS=10V, f=1MHz 710 pF Output Capacitance Coss V DS=10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss V DS=10V, f=1MHz 72 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 10 ns Rise Time tr 25 ns Turn-OFF Delay Time td(off) 43 ns Fall Time tf 25 ns Total Gate Charge Qg VDS=15V, VGS=10V, ID=3.5A 11.8 nC Gate-to-Source Charge Qgs 2.4 nC Gate-to-Drain “Miller” Charge Qgd 2.0 nC Diode Forward Voltage VSD IS=7A, VGS=0V 0.79 1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ECH8659-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID=3.5A RL=4.3Ω VDD=15V VOUT ECH8659 VIN 10V VIN ECH8659 No. A1224-2/7

Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A IT13723 IT13724 VDS=10V --25 Ta=75 °CVGS=3.0V 3.5V4.0V 8.0V 10.0V 16.0V 4.5V6.0V Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 1000 100 IT13725 1061 428 41 2 1 6 Ta=25°C IT13726 --60 --40 --20 0 20 40 60 80 100 120 140 160 0.1 2 1.0 1035 7 IT13729 IT13727 IT13728 0 5 10 25 15 20 30 0.01 0.1 1.0 IT13730 0.1 1.0 0.1 20.01 5723 1.0 22573 Ta= --25 75°C 25°C VDS=10V --25 25°C Ta=75 VGS=0V VDD=15V VGS=10V td(off) tr tf Ciss Coss Crss f=1MHz 10573 22 33 57 VGS=4.5V , ID=2.0A VGS=10.0V , ID=3.5A td(on) VGS=4.0V , ID=2.0A ID=2A 3.5A Forward Transfer Admittance, | yfs | -- S | yfs | -- ID ECH8659 No. A1224-3/7

Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg 0123456789 1 0 1 1 1 2 IT13731 IT13732 VDS=15V ID=3.5A 0.1 1.0 0.01 0.01 0.1 5723 2 1.05732 105732 3 5 Operation in this area is limited by RDS(on). 100 μs 100ms DC operation 10ms 1ms2 100 IDP=40A ID=7A PW≤10μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W 20 40 0.4 60 80 100 120 140 160 IT13733 0.8 1.2 1.6 1.8 0.2 0.6 1.0 1.4 1.5 1.3 1unit Total Dissipation When mounted on ceramic substrate (900mm2✕0.8mm) ECH8659 No. A1224-4/7

Embossed Taping Specifi cation ECH8659-TL-H ECH8659 No. A1224-5/7

Outline Drawing Land Pattern Example ECH8659-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65 ECH8659 No. A1224-6/7

Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ECH8659 PS No. A1224-7/7