ECH8652

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Document overview

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Technical content

Features

• Low ON-resistance • Halogen free compliance
• 1.8V drive • Protection diode in
• Composit type, facilitating high-density mounting Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -12 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D -- 6 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -40 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1unit 1.3 W Total Power Dissipation P T When mounted on ceramic substrate (900mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-001 Product & Package Information
• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View TL WX LOT No. ECH8652-TL-H 62012 TKIM/O0108PE TIIM TC-00001630 No. A0935-1/7 http://onsemi.com Semiconductor Components Industries, LLC, 2013 July, 2013 ECH8652 P-Channel Power MOSFET –12V, –6A, 28mΩ, Dual ECH8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -12 V Zero-Gate Voltage Drain Current IDSS1V DS=- -8V, VGS=0V - -1 μA IDSS2V DS=- -12V, VGS=0V - -10 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -6V, ID=- -1mA - -0.4 - -1.4 V Forward Transfer Admittance | yfs | VDS=- -6V, ID=- -3A 6.6 11 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -3A, VGS=- -4.5V 21 28 mΩ RDS(on)2 I D=- -1.5A, VGS=- -2.5V 31 45 mΩ RDS(on)3 I D=- -0.5A, VGS=- -1.8V 49 78 mΩ Input Capacitance Ciss VDS=- -6V, f=1MHz 1000 pF Output Capacitance Coss 320 pF Reverse Transfer Capacitance Crss 250 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 11 ns Rise Time tr 72 ns Turn-OFF Delay Time td(off) 105 ns Fall Time tf 87 ns Total Gate Charge Qg VDS=- -6V, VGS=- -4.5V, ID=- -6A 11 nC Gate-to-Source Charge Qgs 1.5 nC Gate-to-Drain “Miller” Charge Qgd 2.9 nC Diode Forward Voltage VSD IS=- -6A, VGS=0V - -0.81 - -1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ECH8652-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P.G 50Ω G S D ID= --3A RL=2Ω VDD= --6V VOUT ECH8652 VIN --4.5V VIN ECH8652 No. A0935-2/7

Gate-to-Source V oltage, VGS -- V RDS(on) -- VGS Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A 100 1000 100 1000 IT12949 --2 --4 --1 --3 --5 --6 IT12947 IT12948 --1 --4 --7 --2 --5 --8 --3 --6 --9 --10 --2 --6 --4 --8 100 VDS= --6V --25 Ta=75 VGS= --1.5V --1.8V Ta=25°C IT12950 --60 --40 --20 0 20 40 80 120 60 100 140 160 IT12953 IT12951 IT12952 0.001 --0.01 --0.1 IT12954 0.01 0.1 1.0 Ta= --25 75°C 25°C VDS= --6V --25 Ta=75 VGS=0V VDD= --6V VGS= --4.5V td(off) td(on) tr tf Ciss Coss Crss f=1MHz --6.0V --2.5V --8.0V --1023 5 7 VGS= --1.8V , ID= --0.5A --4.0V --4.5V ID= --0.5A --3.0A --1.5A VGS= --2.5V , ID= --1.5A VGS= --4.5V , ID= --3.0A --1.0 --10 | yfs | -- ID Forward Transfer Admittance, | yfs | -- S ECH8652 No. A0935-3/7

Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V 012345678 1 0 91 1 1 2 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 IT12955 IT12956 IT12957 VDS= --6V ID= --6A --0.1 --1.0 20 40 0.4 60 80 100 120 140 160 1.0 1.4 1.5 1.3 1.8 0.2 0.8 0.6 1.2 1.6 --0.01 Operation in this area is limited by RDS(on). PW≤10μs 100msDC operation (Ta=25 °C) 10ms 1ms IDP= --40A ID= --6A 1unit --10 --100 --10573 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) Total Dissipation When mounted on ceramic substrate (900mm2×0.8mm) ECH8652 No. A0935-4/7

Embossed Taping Specifi cation ECH8652-TL-H ECH8652 No. A0935-5/7

Outline Drawing Land Pattern Example ECH8652-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65 ECH8652 No. A0935-6/7

Note on usage : Since the ECH8652 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ECH8652 PS No. A0935-7/7