ECH8616

ECH8616 ONSEMI | Alldatasheet

Document overview

• PDF pages: 4

Technical content

Features

• Ultrahigh-speed switching.
• 4V drive.
• Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 3A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 20 A Allowable Power Dissipation P D Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.3 W Total Dissipation P T Mounted on a ceramic board (900mm2✕0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 60 V Zero-Gate Voltage Drain Current I DSS VDS =60V, VGS =0 1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS =10V, ID =1.5A 2.2 3.8 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =1.5A, VGS =10V 70 93 m Ω R DS (on)2 I D =0.5A, VGS =4V 92 133 m Ω Input Capacitance Ciss V DS =20V, f=1MHz 560 pF Output Capacitance Coss V DS =20V, f=1MHz 60 pF Reverse Transfer Capacitance Crss V DS =20V, f=1MHz 41 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 11 ns Rise Time t r See specified Test Circuit. 11 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 61 ns Fall Time t f See specified Test Circuit. 32 ns Marking : FJ Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: ECH8616/D

Rev.0 I Page 2 of 4 I www.onsemi.com Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =30V, VGS =10V, ID =3A 12.8 nC Gate-to-Source Charge Qgs V DS =30V, VGS =10V, ID =3A 2.1 nC Gate-to-Drain “Miller” Charge Qgd V DS =30V, VGS =10V, ID =3A 2.7 nC Diode Forward Voltage V SD IS=3A, VGS =0 0.81 1.2 V Package Dimensions Electrical Connection unit : mm 2206B Switching Time Test Circuit PW=10 µs D.C.≤1% P.G 50Ω G S D ID =1.5A R L=20Ω VDD =30V VOUT ECH8616 VIN 10V VIN 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 0.15 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07

Rev.0 I Page 3 of 4 I www.onsemi.com Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A Ambient Temperature, Ta -- °C R DS (on) -- Ta Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS Drain Current, ID -- A Forward Transfer Admittance, yfs -- S yfs -- ID Diode Forward V oltage, VSD -- V Forward Current, IF -- A IF -- VSD Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ 1000 100 1.0 100 1000 IT08981 IT08979 IT08980 0.5 1.0 1.5 2.0 2.5 3.0 2 4 6 8 10 100 120 140 160 180 200 V DS =10V --25 Ta=75 V GS =2.5V 3.0V 4.0V 10V Ta=25°C ID =0.5A 1.5A IT08982 --60 --40 --20 0 20 40 60 80 100 120 140 160 100 120 140 160 180 200 0.10.01 23 5 7 1.023 5 7 1023 5 7 IT08985 IT08983 IT08984 0 5 10 15 20 25 30 0.001 0.01 0.1 1.0 IT08986 0.01 1.0 0.1 0.01 0.1 57230.001 5723 1.05723 105723 Ta= --25°C 75°C 25°C V DS =10V --25 Ta=7 5°C V GS =0 V DD =30V V GS =10V td(off) td(on) tr tf Ciss Coss Crss f=1MHz ID=0.5A, V GS=4V ID=1.5A, V GS=10V 8.0V 6.0V 5.0V

Rev.0 I Page 4 of 4 I www.onsemi.com Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W 1.0 0.1 0123456789 10 11 12 13 20 40 0.4 60 80 100 120 140 160 IT08989 0.8 1.2 1.3 1.6 0.2 0.6 1.0 1.4 1.5 V DS =30V ID =3A IT08987 IT08988 0.01 0.01 0.1 5723 1.05723 105723 1005723 Operation in this area is limited by RDS (on). IDP =20A ID =3A 100 µs 100msDC operation(Ta=25 °C) 10ms 1ms 1unit Total Dissipation Mounted on a ceramic board (900mm 2✕0.8mm) <10µs Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit ECH8616/D /K4C/K49/K54/K45/K52 /K41 /K54/K55/K52/K45 /K46/K55/K4C/K46/K49/K4C/K4C/K4D/K45/K4E/K54 /K3A /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K44/K69/K73/K74/K72/K69/K62/K75/K74/K69/K6F/K6E /K43/K65/K6E/K74/K65/K72 /K66/K6F/K72 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K50/K2E /K4F /K2E /K42 /K6F /K78 /K35 /K31 /K36 /K33 /K2C /K44/K65/K6E/K76/K65/K72 /K2C /K43/K6F/K6C/K6F/K72/K61/K64/K6F /K38/K30/K32/K31 /K37 /K55/K53/K41 /K50/K68/K6F/K6E/K65 /K3A/K33 /K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K35 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K30 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K46/K61 /K78/K3A /K33/K30/K33 /K2D /K36/K37/K35 /K2D/K32/K31 /K37/K36 /K6F/K72 /K38/K30/K30 /K2D/K33/K34/K34 /K2D/K33/K38/K36/K37 /K54 /K6F/K6C/K6C /K46 /K72/K65/K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61 /K45/K6D/K61/K69/K6C /K3A /K6F/K72/K64/K65/K72/K6C/K69/K74/K40/K6F/K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D /K4E/K2E /K41/K6D/K65/K72/K69/K63/K61/K6E /K54 /K65/K63/K68/K6E/K69/K63/K61/K6C /K53/K75/K70/K70/K6F/K72 /K74 /K3A/K38/K30 /K30 /K2D /K32 /K38/K32 /K2D /K39 /K38/K35 /K35/K54 /K6F /K6C /K6C/K46 /K72 /K65 /K65 /K55/K53/K41 /K2F/K43/K61/K6E/K61/K64/K61/K2E /K45/K75/K72/K6F/K70/K65/K2C /K4D/K69/K64/K64/K6C /K65/K45 /K61 /K73 /K74/K61 /K6E /K64/K41 /K66 /K72 /K69 /K63 /K61/K54 /K65 /K63 /K68 /K6E /K69 /K63 /K61 /K6C/K53 /K75 /K70 /K70 /K6F /K72 /K74 /K3A /K50 /K68/K6F/K6E/K65/K3A /K34/K32/K31 /K33/K33 /K37/K39 /K30 /K32/K39/K31/K30 /K4A /K61/K70/K61/K6E /K43/K75/K73/K74/K6F/K6D/K65/K72 /K46/K6F/K63/K75/K73 /K43/K65/K6E/K74/K65/K72 /K50 /K68/K6F/K6E/K65/K3A /K38/K31/K2D/K33 /K2D /K35/K37/K37/K33 /K2D/K33/K38 /K35/K30 /K4F/K4E /K53/K65/K6D/K69/K63/K6F/K6E/K64/K75/K63/K74/K6F/K72 /K57/K65/K62/K73/K69/K74/K65 /K3A www.onsemi.com /K4F/K72/K64/K65/K72 /K4C/K69/K74/K65/K72/K61/K74/K75/K72/K65 /K3A/K68 /K74/K74 /K70/K3A /K2F/K2F /K77/K77/K77 /K2E/K6F /K6E/K73/K65/K6D/K69/K2E/K63/K6F/K6D/K2F/K6F/K72/K64/K65/K72/K6C/K69/K74 /K46/K6F/K72 /K61/K64/K64/K69/K74/K69/K6F /K6E/K61/K6C /K69/K6E/K66/K6F/K72/K6D/K61/K74/K69/K6F/K6E/K2C /K70/K6C/K65/K61/K73/K65 /K63/K6F/K6E/K74/K61/K63/K74 /K79/K6F/K75/K72 /K6C/K6F/K63/K61/K6C /K53/K61/K6C/K65/K73 /K52/K65/K70/K72/K65/K73/K65/K6E/K74/K61/K74/K69/K76/K65 /K50/K55/K42/K4C/K49/K43/K41 /K54 /K49/K4F/K4E /K4F/K52/K44/K45/K52/K49/K4E/K47 /K49/K4E/K46 /K4F/K52/K4D/K41 /K54/K49/K4F/K4E ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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