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Technical content

Features

  • 2.5V drive • Best suited for LiB charging and discharging switch
  • Common-drain type • Halogen free compliance
  • Protection diode in Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 30 V Gate-to-Source Voltage V GSS ±12 V Drain Current (DC) I D 6A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm ×0.8mm) 1unit 1.4 W Total Dissipation P T When mounted on ceramic substrate (900mm ×0.8mm) 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-003 Product & Package Information
  • Package : ECH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 8765 1234 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View TL ECH8602M-TL-H TZ Lot No.

No. A1562-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current I DSS V DS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 0.5 1.3 V Forward Transfer Admittance | yfs | VDS=10V, ID=3A 5 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=3A, VGS=4.5V 15.4 22 30 m Ω RDS(on)2 I D=3A, VGS=4.0V 16.1 23 31 m Ω RDS(on)3 I D=1.5A, VGS=2.5V 18 30 44 m Ω Turn-ON Delay Time td(on) See specifi ed Test Circuit. 305 ns Rise Time tr 490 ns Turn-OFF Delay Time td(off) 3500 ns Fall Time tf 1200 ns Total Gate Charge Qg VDS=15V, VGS=4.5V, ID=6A 7.5 nC Gate-to-Source Charge Qgs 1.7 nC Gate-to-Drain “Miller” Charge Qgd 1.6 nC Diode Forward Voltage VSD IS=6A, VGS=0V 0.8 1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ECH8602M-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% P. G 50Ω G S D ID=3A RL=5Ω VDD=15V VOUT ECH8602M VIN 4.5V VIN Rg=1kΩ Rg

No. A1562-3/7 Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ambient Temperature, Ta -- °C RDS(on) -- TaRDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ IS -- VSD Source Current, IS -- A Diode Forward V oltage, VSD -- VDrain Current, ID -- A | yfs | -- ID Forward Transfer Admittance, | yfs | -- S SW Time -- ID Switching Time, SW Time -- ns Drain Current, ID -- A ID -- VGS Drain Current, ID -- A Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V 0.001 0.1 0.01 1.0 IT15048 VDS=10V --25 Ta=75 IT15051 IT15052 Ta= --25 75°C 25°C VDS=10V --25 Ta=75 VGS=0V 0.1 1.0 0.10.01 5723 3 5 7 25 7 23 21.0 10 1000 100 0.1 2 1.035 7 2 3 2 3 57 IT15053 VDD=15V VGS=4.5Vtd(off) tr tf td(on) 1.0 2.0 3.0 4.5 4.0 0.5 1.5 2.5 3.5 6.0 5.5 5.0 IT15055 VGS=1.5V 2.0V2.5V 10.0V 4.5V 4.0V IT15309 Ta=25°C IT15310 02 1 0 8641 2 012345 8 76 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 IT15311 ID=1.5A --60 --20--40 0 20 40 80 60 100 140 120 160 VGS=4.0V , I D=3A VGS=4.5V , I D=3A VGS=2.5V , I D=1.5A VDS=15V ID=6A

No. A1562-4/7 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C 20 40 0.6 1.0 1.4 1.5 1.8 0.4 0.2 0.8 1.2 1.6 60 80 100 120 140 160 IT5059PD -- Ta Allowable Power Dissipation, PD -- W Total Dissipation 1unit When mounted on ceramic substrate (900mm2×0.8mm) IT15058 0.1 1.0 0.01 0.01 2 1.05732 0.15732 105732 5 3 Operation in this area is limited by RDS(on). 100ms DC operation 10ms

100 IDP=60A

ID=6A 1ms 100μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) PW≤10μs

No. A1562-5/7 Embossed Taping Specifi cation ECH8602M-TL-H

No. A1562-6/7 Outline Drawing Land Pattern Example ECH8602M-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65

PS No. A1562-7/7 Note on usage : Since the ECH8602M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.