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Technical content

Features

  • Composite type, facilitating high-density mounting • Mounting height 0.9mm
  • Low collector-to-emitter saturation voltage NPN : V CE(sat)=0.075V(typ.)@IC=2.5A PNP : V CE(sat)= - -0.1V(typ.)@IC= - -2.5A
  • Halogen free compliance Specifi cations ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -30)40 V Collector-to-Emitter Voltage V CEO (- -)30 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)5 A Collector Current (Pulse) I CP PW≤1μs, duty cycle≤1% (- -)30 A Base Current I B (- -)600 mA Collector Dissipation P C When mounted on ceramic substrate (900mm ×0.8mm) 1unit 1.3 W Total Dissipation P T When mounted on ceramic substrate (900mm ×0.8mm) 1.6 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7011A-007 Product & Package Information
  • Package : ECH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 8765 1234 MA LOT No. 1 : Emitter(NPN TR) 2 : Base(NPN TR) 3 : Emitter(PNP TR) 4 : Base(PNP TR) 5 : Collector(PNP TR) 6 : Collector(PNP TR) 7 : Collector(NPN TR) 8 : Collector(NPN TR) ECH8 1 4 0.15 0 to 0.02 0.250.25 2.8 2.3 0.65 2.9 0.3 0.90.07 Top View Bottom View TL ECH8501-TL-H

No. A1581-2/8 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)30V, IE=0A (- -)0.1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)500mA 200 560 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)500mA (260)280 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (49)32 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)2.5A, IB=(- -)125mA (- -100)75 (- -170)110 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)2.5A, IB=(- -)125mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -30)40 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specifi ed Test Circuit. (37)30 ns Storage Time t stg (147)220 ns Fall Time t f (14)12 ns Note : The specifi cations shown above are for each individual transistor. Switching Time Test Circuit

Ordering Information

Device Package Shipping memo ECH8501-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free VR RB VCC=12VVBE= --5V + +50Ω INPUT Vout RL 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2=2.5A (For PNP, the polarity is reversed.)

No. A1581-3/8 --1.0 --0.5 IC -- VCE IT15618 --3.0 --2.0 --4.0 --5.0 --2.5 --1.5 --3.5 --4.5 IB=0mA --2mA --4mA --6mA --8mA --10mA --40mA --50mA --100mA --70mA --30mA --20mA [PNP] IC -- VCE IT15619 [NPN] 1.0 0.5 3.0 2.0 4.0 5.0 2.5 1.5 3.5 4.5 IB=0mA 2mA 4mA 6mA 8mA 10mA 40mA 100mA 70mA 30mA 20mA 50mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IT15622 100 0.01 2 3 5 7 0.1 2 3 5 7 2 3 5 71.0 10 1000 100 --0.01 2 3 5 7 --0.1 2 3 5 7 2 3 5 7--1.0 --10 1000 7 100 1000 100 1000 VCE= --0.5V Ta=75°C 25°C --25°C [PNP] IT15624 VCE= --2V Ta=75°C 25°C --25°C [PNP] IT15623 Ta=75°C --25°C 25°C Ta=75°C --25°C 25°C VCE=0.5V [NPN] IT15625 VCE=2V [NPN] IT15620 VCE= --2V [PNP] IT15621 Ta=75 --25 --2 --5 --4 --3 --1 Ta=75 --25 VCE=2V [NPN] hFE -- IC Collector Current, IC -- A DC Current Gain, hFE hFE -- IC Collector Current, IC -- A DC Current Gain, hFE hFE -- IC Collector Current, IC -- A DC Current Gain, hFE hFE -- IC Collector Current, IC -- A DC Current Gain, hFE IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A

No. A1581-4/8 IT15678 --0.01 23 5 7 --0.1 23 5 7 23 5 7 --1.0 --10 --100 --10 0.01 23 5 7 0.1 23 5 7 23 5 7 1.0 10 100 Ta=75 --25°C 25°C IC / IB=20 Ta=75 --25 25°C [PNP] IT15679 IC / IB=20 [NPN]VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV IT15628 Ta=75 --25 25°C IC / IB=50 [PNP] IT15680 IC / IB=50 [NPN] IT15632 --1.0 100 --102 3 5 7 2 3 5 f=1MHz [PNP] IT15633 100 1.0 10 23 5 23 5 7 f=1MHz [NPN] IT15630 Ta= --25°C 75°C 25°C IC / IB=20 [PNP] IT15631 1.0 IC / IB=20 75°C Ta= --25°C 25°C [NPN] --0.01 23 5 7 --0.1 23 5 7 23 5 7 --1.0 --10 --100 --10 0.01 23 5 7 0.1 2 3 57 2 3 57 1.0 10 0.01 23 5 7 0.1 23 5 7 23 5 7 1.0 10 --1.0 --0.01 23 5 7 --0.1 23 5 7 23 5 7 --1.0 --10 100 Ta=75 --25 25°C VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V

No. A1581-5/8 IT15634 100 0.01 23 5 7 23 5 7 23 5 70.1 1.0 10 100 VCE= --10V [PNP] IT15635 VCE=10V [NPN]fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz [PNP/NPN][PNP/NPN] 0.1 1.0 0.01 23 5 723 5 723 5 7 23 50.01 0.1 1.0 10 IT15636 500 μs 1ms10ms 100ms DC operation ICP=30A IC=5A ≤1μs 100μs Collector-to-Emitter V oltage, VCE -- V A S O Collector Current, IC -- A Ta=25°C Single pulse For PNP, minus sign is omitted. Collector Dissipation, PC -- W PC -- Ta Ambient Temperature, Ta -- °C 1.8 1.6 1.0 1.2 1.4 1.3 0.8 0.6 0.4 0.2 2006 0 40 80 100 140 120 160 IT15457 Total Dissipation 1unit When mounted on ceramic substrate (900mm2×0.8mm)

No. A1581-6/8 Embossed Taping Specifi cation ECH8501-TL-H

No. A1581-7/8 Outline Drawing Land Pattern Example ECH8501-TL-H Mass (g) Unit 0.02 * For reference mm Unit: mm 0.4 0.6 2.8 0.65

PS No. A1581-8/8 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.