E522.01 | DigiCamel IC Datasheet

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Technical content

Features

Applications

ÿ Wide input voltage range 4.5V to 40V ÿ PFM regulator up to 1.33MHz ÿ Up to >92% efficiency ÿ Very low 8µA sleep mode current ÿ Ultra low 12µA standby current ÿ 100% duty cycle capability ÿ Small QFN20L4 lead-less package ÿ TSSOP16 package ÿ AEC-Q100 qualification ÿ Junction temperature range -40°C to +150°C ÿ Micro Controller Systems ÿ Automotive Telematics, Dashboards ÿ Partial Networking ÿ Peripheral Control Systems General Description The E522.01/02/03/04/05/06/07/08/09 product family provides ultra low quiescent current step down DC/DC converters with integrated power MOSFET. The PFM (Pulse Frequency Modulation) regulator allows outstanding fast line- and load response time, stability and high efficiency over the full load current range. The integrated idle detection assures an ultra low idle cur- rent and high efficiency with low load currents down to <100µA for the completely powered application. A power-good signal is provided by a high-voltage open- drain low-side switch. The E522.0x buck converter accommodates to common single supply micro controller applications. Low exter - nal component count and small QFN20L4 / TSSOP16 package allow compact PCB designs. Please find the ordering information in chapter „10 Product Ordering Information“

Ordering Information

D R CIN COUT PGOOD Feedback for E522.05/06/09 OUTLXT VIN AGND ON PGND PG IN ON RSENSE1 RSENSE2 CSENSE E522.0x

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

1 Functional Diagram

Figure 1: Block diagram

2 Pinout

Figure 2: Package pinout, transparent top view, not to scale.

2.1 Pin Configuration QFN20L4 / TSSOP16

E522.0x TSSOP16 NC VIN NC ON NC PGOOD NC AGND NC LXT NC PGND SENSE NC NC OCP E522.0x OCP Resistor Driver Internal Driver Transistor E522.0X LXT VIN DRIVER ACTIVE SENSE OC OFF IDLE PFM Controller AGND OCP IDLE Detector IDLE Power Good Comparator VOUT Comparator PGND SENSE Internal Supply VIN ON PGOOD OVT ENABLE

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY Pin Name Type 1) Description Remark QFN20L4 TSSOP16 1 2 VIN HV S High-Voltage Supply input bypass to GND with a low ESR ca- pacitance >20µF 2 1 NC - Not connected Open or GND 3 4 ON HV AI High-Voltage input to enable converter 4 3 NC - Not connected Open or GND 5 6 PGOOD HV AO High-Voltage capable low-side open-drain output for power good flag 6 8 AGND S Signal ground connection 7 5 NC - Not connected Open or GND 8 7 NC - Not connected Open or GND 9 10 NC - Not connected Open or GND 10 9 OCP AI Over-current protection resistor input, con- nect to ground via resistor 11 - SENSE AI Feedback input for converter regulation, connect to output voltage Redundant, con- nect both SENSE pins 12 12 SENSE AI Feedback input for converter regulation, connect to output voltage Redundant, con- nect both SENSE pins 13 11 NC - Not connected Open or GND 14 13 PGND S Power ground connection 15 15 LXT HV AO Integrated high-side switch output, con- nect freewheeling diode and inductor to this pin 16 14 NC - Not connected Open or GND 17 16 NC - Not connected Open or GND 18 - NC - Not connected Open or GND 19 - NC - Not connected Open or GND 20 - NC - Not connected Open or GND 21 - EP - Exposed die pad Connect to GND 1) D = Digital, A = Analog, S = Supply, HV = High voltage (see max. ratings), I = Input, O = Output Note: Pins with identical names have to be connected.

2.2 Pin Description

Table 1: Pin Description

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

3 Absolute Maximum Ratings

Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress ratings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. All voltages referred to VGND. Currents flowing into terminals are positive, those drawn out of a terminal are negative. Description Condition Symbol Min Max Unit Supply voltage at pin VIN VVIN -0.3 40 V Voltage at pin ON VON -0.3 40 V Voltage at pin PGOOD VPGOOD -0.3 40 V Current at pin PGOOD IPGOOD 0 5 mA Voltage at pin SENSE VSENSE -0.3 6 V Voltage at pin OCP VOCP -0.3 0.8 V Voltage at pin LXT VLXT -10 VIN +0.3 V Power dissipation (E522.01-06) PTOT 500 mW Power dissipation (E522.07-09) PTOT 1 W Storage temperature TSTG -50 +150 °C

4 ESD Protection

Description Condition Symbol Min Max Unit ESD HBM protection at pin VIN 1) VESD(HBM) 3 kV ESD HBM protection at all other pins 1) VESD(HBM) 2 kV ESD CDM protection at all pins 2) VESD(CDM) 500 V ESD CDM protection at corner pins 2) VESD(CDM)C 750 V 1) According to AEC-Q100-002 (HBM) chip level test 2) According to AEC-Q100-011 (CDM) chip level test

5 Recommended Operating Conditions

Description Condition Symbol Min Max Unit Junction temperature 2) TJ -40 +150 °C Ambient temperature Tamb -40 +125 °C Supply voltage at pin VIN VVIN 4.5 1) 40 V 1) For V VIN < V OUT , E522.0x enters 100% duty cycle mode 2) For junction temperatures > 150°C thermal shutdown may occur

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

6 Electrical Characteristics

Description Condition Symbol Min Typ Max Unit Supply Sleep mode quiescent current VON = 0; non-switching IVIN,q,SLP 8 µA Active mode quiescent current VON = VVIN > 8V; IOUT < 100µA IVIN,q 12 µA Active mode quiescent current VON = VVIN LXT driver OFF IVIN,q 150 µA Input resistance at pin ON VON = VVIN = 14V ION 7 MΩ Threshold voltage at pin ON VVIN > 4.5V VON,th 1.40 1.48 1.56 V VIN Undervoltage Lockout VVIN rising VVIN,UV 3.5 4.2 V Output Current Limit Programming Output voltage at OCP 24kΩ ≤ ROCP ≤ 60kΩ VOCP 500 mV OCP Selection Resistor ROCP 24 60 kΩ Load capacitance at OCP COCP 100 pF E522.01 Output Output regulation threshold 1) IOUT = 500mA VVIN = 14V VOUT 4.8 5.0 5.2 V On Resistance at LXT VVIN = 14V RDS(ON) 0.7 1.5 Ω Over-current detection ROCP = 24kΩ 2) IOCP, 24k Ω 740 830 920 mA ROCP = 60kΩ 2) IOCP,60k Ω 300 350 400 mA E522.02 Output Output regulation threshold 1) IOUT = 500mA VVIN = 14V VOUT 3.2 3.33 3.46 V On Resistance at LXT VVIN = 14V RDS(ON) 0.7 1.5 Ω Overcurrent detection ROCP = 24kΩ 2) IOCP, 24k Ω 740 830 920 mA ROCP = 60kΩ 2) IOCP,60k Ω 300 350 400 mA E522.03 Output Output regulation threshold 1) IOUT = 350mA VVIN = 14V VOUT 4.8 5.0 5.2 V On Resistance at LXT VVIN = 14V RDS(ON) 1.1 2.5 Ω Overcurrent detection ROCP = 24kΩ 2) IOCP, 24k Ω 490 550 610 mA ROCP = 60kΩ 2) IOCP,60k Ω 190 230 270 mA E522.04 Output Output regulation threshold 1) IOUT = 350mA VVIN = 14V VOUT 3.2 3.33 3.46 V On Resistance at LXT VVIN = 14V RDS(ON) 1.1 2.5 Ω Overcurrent detection ROCP = 24kΩ 2) IOCP, 24k Ω 490 550 610 mA ROCP = 60kΩ 2) IOCP,60k Ω 190 230 270 mA (VVIN = 4.5V to 40V, Tamb = -40°C to +125°C, unless otherwise noted. Typical values are at VVIN = 14V and Tamb = +25°C. Positive currents flow into the device pins.) 1) Given value is switching threshold at pin SENSE, for V VIN < V OUT regulator provides 100% conductance mode 2) Measured at V VIN = 14V

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY Electrical Characteristics (continued) (VVIN = 4.5V to 40V, Tamb = -40°C to +125°C, unless otherwise noted. Typical values are at VVIN = 14V and Tamb = +25°C. Positive currents flow into the device pins.) Description Condition Symbol Min Typ Max Unit E522.05 Output Output regulation threshold 1) IOUT = 500mA VVIN = 14V VSENSE 1.416 1.475 1.534 V On Resistance at LXT VVIN = 14V RDS(ON) 0.7 1.5 Ω Over-current detection ROCP = 24kΩ 2) IOCP, 24k Ω 740 830 920 mA ROCP = 60kΩ 2) IOCP,60k Ω 300 350 400 mA E522.06 Output Output regulation threshold 1) IOUT = 350mA VVIN = 14V VSENSE 1.416 1.475 1.534 V On Resistance at LXT VVIN = 14V RDS(ON) 1.1 2.5 Ω Overcurrent detection ROCP = 24kΩ 2) IOCP, 24k Ω 490 550 610 mA ROCP = 60kΩ 2) IOCP,60k Ω 190 230 270 mA E522.07 Output Output regulation threshold 1) IOUT = 1A VVIN = 14V VOUT 4.8 5.00 5.2 V On Resistance at LXT VVIN = 14V RDS(ON) 0.44 0.75 Ω Over-current detection ROCP = 24kΩ 2) IOCP, 24k Ω 1.3 1.45 1.6 A ROCP = 60kΩ 2) IOCP,60k Ω 0.5 0.6 0.7 A E522.08 Output Output regulation threshold 1) IOUT = 1A VVIN = 14V VOUT 3.2 3.33 3.46 V On Resistance at LXT VVIN = 14V RDS(ON) 0.44 0.75 Ω Overcurrent detection ROCP = 24kΩ 2) IOCP, 24k Ω 1.3 1.45 1.6 A ROCP = 60kΩ 2) IOCP,60k Ω 0.5 0.6 0.7 A E522.09 Output Output regulation threshold 1) IOUT = 1A VVIN = 14V VSENSE 1.416 1.475 1.534 V On Resistance at LXT VVIN = 14V RDS(ON) 0.44 0.75 Ω Overcurrent detection ROCP = 24kΩ 2) IOCP, 24k Ω 1.3 1.45 1.6 A ROCP = 60kΩ 2) IOCP,60k Ω 0.5 0.6 0.7 A 1) Given value is switching threshold at pin SENSE, for V VIN < V SENSE regulator provides 100% conductance mode 2) Measured at V VIN = 14V

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY Electrical Characteristics (continued) (VVIN = 4.5V to 40V, Tamb = -40°C to +125°C, unless otherwise noted. Typical values are at VVIN = 14V and Tamb = +25°C. Positive currents flow into the device pins.) Description Condition Symbol Min Typ Max Unit Switching Switching frequency fS 0 1.75 MHz Minimum LXT on time IOUT < IOCP tLXT(ON) 260 ns IOUT ≥ IOCP tLXT(ON) 100 ns Minimum LXT off time PGOOD = '1' tLXT(OFF) 520 ns IOUT ≥ IOCP; VSENSE > 1.2V tLXT(OFF) 1330 ns IOUT ≥ IOCP; VSENSE < 1.0V tLXT(OFF) 2450 ns Power Good Detector Power good detection threshold, rising edge VSENSE,th(LH)/ VOUT(NOM) 92.5 % Power good detection threshold, falling edge VSENSE,th(HL)/ VOUT(NOM) 90 % Output voltage at pin PGOOD VSENSE < VSENSE,th(HL) IPGOOD = 2mA VPGOOD 0.2 0.4 V Leakage at pin PGOOD VSENSE = VOUT,NOM VPGOOD = 5V IPGOOD,lk 3 µA IDLE Detector IDLE detection delay no switching TIDLE 70 110 150 µs Average LXT duty cycle for IDLE Discontinuous operation DIDLE 1.38 % Wake-up threshold during IDLE relative to nominal VOUT in % VSENSE,WU 95 % Wake-up delay after IDLE VSENSE < VSENSE,WU TDEL,ACTIVE 10 25 µs

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

7 Typical Operating Characteristics

Diagrams showing typical characteristics at VVIN=14V and TAMB=25°, unless otherwise noted EFF_DEMO_MAWE Seite 1 0 50 100 150 200 250 300 350 400 450 500 550 100 E522.01 Efficiency vs Loadcurrent (VIN 7V, 14V, 24V) EFF,7V EFF,1 4V EFF,2 4V Loadcurrent / mA Efficiency / % (continuous conduction mode) F_LXT_V Seite 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Operating Frequency vs. normalized VIN/VOUT VIN/VOUT Ratio F_LXT / MHz V_SWITCH5V_T Seite 1 -40 -20 0 20 40 60 80 100 120 140 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5V Sense Threshold vs. Temperature Temp. / °C V_Swicth / V (for VVIN<VOUT sense threshold is info only) V_SWITCH5V_V Seite 1 4 8 12 16 20 24 28 32 36 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5V Sense Threshold vs. Supply Voltage VIN VIN / V V_Swicth / V V_SWITCH3V_T Seite 1 -40 -20 0 20 40 60 80 100 120 140 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.3V Sense Threshold vs. Temperature Temp. / °C V_Swicth / V V_SWITCH3V_V Seite 1 4 8 12 16 20 24 28 32 36 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.3V Sense Threshold vs. Supply Voltage VIN VIN / V V_Swicth / V -40 -20 0 20 40 60 80 100 120 140 1.36 1.38 1.40 1.42 1.44 1.46 1.48 1.50 1.52 1.54 1.56 1.58 1.60 Adj. Swit ching Threshold vs. Temperat ure T em p. / ° C V _Swicth / V 4 8 12 16 20 24 28 32 36 1.36 1.38 1.40 1.42 1.44 1.46 1.48 1.50 1.52 1.54 1.56 1.58 1.60 Adj. Swit ching Threshold vs. Supply VIN V I N / V V _Swicth / V

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY I_SLEEP_IDLE_T Seite 1 Supply Current vs. Temperature (Sleep & Idle Mode) I_VIN ,SL EEP I_ VIN ,ID LE Temp. / °C I_VIN / µA N / µA I_OCP1_T Seite 1 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Current Limitation vs. Temperature (500mA Device) I _OCP ,24kOhm I_ OC P,6 0k Ohm Temp. / °C I_LXT / mA I_OCP2_T Seite 1 150 200 250 300 350 400 450 500 550 600 650 Current Limitation vs. Temperature (350mA Device) I _OCP ,24kOhm I_ OC P,6 0k Ohm Temp. / °C I_LXT / mA T_WAKEUP_T Seite 1 -40 -20 0 20 40 60 80 100 120 140 Re-Enable Delay vs. Temperature (Idle-to-Active) Temp. / °C t_del / µs I_ACTIVE_T Seite 1 -40 -20 0 20 40 60 80 100 120 140 100 120 140 160 180 200 220 240 260 Supply Current vs. Temperature (Active Mode) Temp. / °C I_VIN / µA 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 Current Limit at ion vs. Temperat ure (1A Device) I _OCP,24k Ohm I _OCP,60k Ohm Tem p. / °C I_LXT / m A 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 Current Limit at ion vs. VIN Volt age (24kOhm@OCP) I _OCP,350m A I _OCP,500m A I _OCP,1A VIN / V I_LXT / m A

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY V_ON_T Seite 1 1.42 1.44 1.46 1.48 1.50 1.52 Enable Threshold at ON vs Temperature E nable Dis able Temp. / °C V_ON / V R_ON_V Seite 1 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 ON Pulldown Resistance vs ON Voltage V_ON / V R_ON,PD / MOhm T_GATEDEL_V Seite 1 3 0.0 4 0.0 5 0.0 6 0.0 7 0.0 8 0.0 9 0.0 100.0 110.0 120.0 130.0 140.0 150.0 Propagation Delay Sense to LXT vs VIN Voltage Sense,Rise S ense, Fall Supply Voltage / V t_Delay / ns 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 Int ernal FET On- Resist ance vs. Temperat ure 350m A r ated 500m A r ated 1A r ated Tem p. / °C R_LXT,ON / Ohm -40 -20 0 20 40 60 80 100 120 140 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Typ. VIN Undervoltage Lockout (vs. Temperature) Temp. / °C V_Underv oltage / V

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

8 Functional Description

8.1 General Description

8.2 Pulse Frequency Modulated Converter

E522.0x product family is a fixed output voltage step-down converter family intended for current-sensitive auto- motive and general battery driven applications, featuring open loop stability and short current limitation for the integrated driver transistor. High operating frequency allows the use of small-sized external components. Integrated IDLE detection provides very low standby currents, significantly reducing the applications total current consumption. If the application supplied by E522.0x is set into low-current mode (typ. < < 1mA, see 8.3), current consumption at VIN is adapted to typical 12µA only. The pulse frequency modulation (PFM) scheme does not need a clock signal for operation, providing minimum ON/ OFF time regulation for the internal switch. Furthermore, the PFM scheme allows fastest transient line and load re- sponses without the need for external compensation networks. Adjustable internal current measurement allows optimal adaption to the inductor without the need for a shunt resistor. The LXT switch control signal is based on a combination of output voltage VSENSE, input voltage VVIN and measured switch current. It provides adaptive frequency in the range of 0Hz up to typ. 1.33MHz as seen in typical perform- ance figures. To avoid unnecessary switching, a minimum ON time of typ. 260ns and OFF time of 520ns is used. ON time will be reduced below 260ns if over-current is detected. OFF time will automatically be increased in length to limit current flow during start-up or short circuit to GND at pin LXT or VOUT. The figure below shows the typical normalized operating frequency in continuous conduction mode: Pin ON Load condition Load condition Internal Signal “IDLE” Mode VOUT IVIN VON < VON,TH SLEEP 0V 8µA VON > VON,TH Nominal load D > DIDLE “0” NORMAL VOUT,nom 150µA VON > VON,TH Reduced load << 1m A D < DIDLE “1” IDLE VOUT,nom - (0%... -5%) 12µA

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

8.3 Idle Detection

Idle operation basically is a sequence of standby periods followed by recharge cycles. During IDLE the application is supplied by the output capacitance. The reference is switched to typ. 95% of nominal value, at which the con - verter will be reactivated to high power operation. In this way, light load currents are compressed to short recharge phases, during which a high efficiency can be reached. E522.0x automatically switches between IDLE and ACTIVE if no external load is applied to E522.0x. The criterion for the decision is that either no switching activity occurred for longer than typ. 110µs or the duty cycle of the con- verter falls below a limit of typically 1:72. (see figure 4) F_LXT_V Seite 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Operating Frequency vs. normalized VIN/VOUT VIN/VOUT Ratio F_LXT / MHz Figure 3: Operating Frequency vs normalized VIN/VOUT Ratio Figure 4: Behaviour in IDLE Mode Vout Ref Switch Vout Ref Switch 2 4 5 1 Either >110µs no switch- ing or duty cycle falls below <1:72 the IC enters Idle Mode

2 In Idle Mode the reference is

reduced by 5%

3 When VOUT reaches lower

limit, switching is activated and reference is set to nom- inal value

4 After 110µs time-out or DC

<1:72 => E522.0x enters Idle Mode again

5 Normal Mode is entered

again when load is back to nominal range

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY Figure 5: Typical operating circuit diagram Table 2: External Components

9 Typical Operating Circuit

Opt. EMC Filter L2D2 C4C5C6 IN SENSE SENSE VOUT OCP PGOOD PGND PGOOD GND external programming for E522.05/06/09 E522.0x Symbol Min Typ Max Unit Description R1 3.3 kΩ Pull up resistor for PGOOD R2 24 60 kΩ OCP configuration resistor R3 3.3 kΩ Optional resistor for connection to VIN R4 30 1) kΩ Resistor for output voltage programming R5 30 kΩ Resistor for output voltage programming R6 0.2 Ω Optional ESR-equivalent resistor C1 47 100 µF Output filter capacitor, low ESR C2 33 100 nF Output filter capacitor, low ESR, low ESL type C3 20 33 µF Input filter capacitor C4 220 nF Input filter capacitor, low ESR, low ESL type C5 100 nF EMC capacitor; low ESR, low ESL type C6 1 nF EMC capacitor; low ESR, low ESL type C7 Optional AC-coupling capacitor (see chapter 9.2.5) L1 18 33 82 µH Inductor LLXT @ E522.01-06 L1 10 22 82 µH Inductor LLXT @ E522.07-09 L2 EMC ferrite e.g. Würth 742-792-118 D1 Freewheeling diode for LXT, preferred Vishay SS14 D2 Optional reverse polarity protection diode 1) Select for V OUT according to R4=R5⋅(VOUT −V SENSE V SENSE

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

9.2 Application / Implementation Hints

9.2.1 Maximum Input Voltage in case of adjustable output voltage (E522.05/06/09) The following chapter will give additional recommendations and advices for the implementation of E522.0x, giving starting values for components during prototyping. The maximum input voltage is defined by the minimum TON,MIN (during over-current limitation) and the requested output voltage. The following diagram shows the recommended area for the input voltage. If the input voltage is higher than recommended, due to transient effects the maximum current in the inductor may exceed the config- ured over-current limitation during start-up or in case of short circuit. 1,5 4,5 7,5 10,5 13,5 16,5 19,5 22,5 25,5 28,5 31,5 34,5 37,5 VOUT [V] VIN [V] VOUT = requested VOUT ILLXT > IOCP RECOMMENDED AREA VOUT = requested VOUT IL < IOCP VOUT ≤ VIN (100% Duty- Cycle) Figure 6: Maximum recommended VIN

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

9.2.3 LLXT Inductor Selection

L=18uH L=33uH L=52uH L=63uH L=82uH L=100uH VOUT (V) IOUT (mA) For example, with an inductor of 33µH and an output voltage of 20V, the minimum available output current is 175mA. Figure 8: Maximum Output Current vs. Ouput Voltage (350mA / E522.06) For a given application (in continuous conducting mode), it is either recommended to choose an inductance value that is suitable for ±15% current ripple at the typical operating frequency or to use the following equations. Depending on VVIN to VOUT ratio, usually two equations describe the maximum peak-to-peak current ripple in the inductor LLXT. It can either be calculated from the maximum input voltage at VIN (VVIN,MAX,APP ) or by the following equation (with VDIODE being the forward voltage drop of the free-wheeling diode) Take the higher result of both equations into account during choice of the external capacitors ESR (see chapter 9.2.4). The minimum ripple may either occur at the maximum operation frequency or at the lowest input voltage that is required for the application. In most cases, the current ripple at peak-operating-frequency can also be calculated by equation b) above. To choose a sufficiently high saturation current for the inductor LLXT, consider - the maximum application load current plus half of the maximum ripple current calculated above and - the configured current limitation derived from ROCP (to avoid degradation or other effects due to saturation of the inductor core - depending on the magnetic core material) In general an additional saturation margin of >25% for the inductor current rating is recommended for transient effects, especially at extreme VVIN to VOUT voltage ratios. DC resistance of LLXT (referred here as RLXT,DC) reduces efficiency and contributes to the losses in the inductor (com- bined with AC losses which may arise due the use of high frequency operation). A DC resistance <0.5Ω is recommend- ed for E522.01-06 (<0.25Ω for E522.07-09). At a given load current ILOAD, resistance affects minimum input voltage re- quired to regulate VOUT in the following way I RIPPLE , LXT , PP1=TON , MIN⋅(VVIN , MAX , APP −VOUT , NOM ) LLXT I RIPPLE , LXT , PP2=TOFF ,MIN , NOM⋅(VOUT , NOM +V DIODE ) LLXT V , MININ =VOUT , NOM +I LOAD+(RDS(ON )+RLXT , DC)

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

9.2.6 Rectification- / Freewheeling Diode Selection

9.2.5 RSENSE, CSENSE Selection for adjustable E522.05/06/09

9.2.4 COUT Capacitor Selection

The free-wheeling diode must have a low forward voltage (to increase efficiency) as well as a very low reverse re- covery time of typically 10ns. In general, a fast Schottky type diode is recommended. High parasitic capacitance as well as long reverse recovery time may cause additional radiated emission at LXT. Parasitic capacitance of this diode decreases the overall efficiency and causes current spikes when the LXT driver turns on. During IDLE, consider the leakage of the free-wheeling diode at nominal converter output voltage which will con- tribute to the overall current consumption (see IDLE adaption, chapter 9.2.9). In general, a bipolar diode can provide lower leakage current and parasitic capacitance, but may also have a negative impact on efficiency due to higher forward voltage drop. Reverse recovery time of the diode must be taken into account. The resistors RSENSE1 and RSENSE2 have to be chosen high enough to avoid a reduction of the efficiency. A typical cur- rent of 50 µ A is recommended to avoid sensitivity to noise. The capacitor C SENSE helps to produce a correct ripple voltage at SENSE pin. Without enough ripple at SENSE pin, the regulation will not be optimal and you could observe burst pulses at LXT pin. When the ripple voltage is high enough, you should see a stable operating frequency. To choose CSENSE, start without any capacitor and increase the value until you are satisfied with the regulation. During nominal operation electrical serial resistance (ESR) of the capacitor is important to generate a minimum output voltage ripple of 10mV to 100mV. This ripple is necessary to provide a proper regulation information for E522.0x. It depends on peripheral elements chosen (LLXT and COUT) and their parasitic behaviour as explained fur- ther on. The ESR of the capacitor COUT (named RESR,COUT, see operating circuit R6) must be high enough to ensure a voltage rip- ple for VOUT to provide high-frequency switching. The ripple voltage can basically be calculated using the inductor current ripple (see chapter 9.2.3) by Electrical serial inductance should be kept as low as possible, what can be achieved by placing a parallel ceramic type capacitor of <100nF (typ. 33nF). During IDLE, the application is supplied by the output capacitor COUT. The capacitance, which is necessary to power the application until E522.0x fully wakes up, can be calculated using the maximum load current step (ILOAD,MAX ) and a maximum tolerable voltage drop (UDROP, M A X) in the following way: For example, assuming a maximum load step of 350mA, a tolerable voltage drop of 120mV and R ESR,COUT being 120mΩ the output capacitance should be chosen >112µF. For proper active operation, it is necessary to choose capacitance values >22µF at VOUT. Take into account, that many capacitor types show a strong temperature and voltage dependency, or may be sensi- ble to high peak currents. Make sure, that at extreme temperatures and voltages the capacitance value is reached. For automotive environments capacitors of X7R material (or better) may be necessary. V RIPPLE ,OUT =RESR , COUT⋅I RIPPLE , LXT , PP COUT = I LOAD , MAX⋅2 5 µs U DROP ,MAX −RESR ,COUT⋅I LOAD ,MAX

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9.2.9 Idle Adaption Options

IDLE / ACTIVE state detection can be adapted to a given application by consideration of the following external in- fluences: a) During start-up, the energy within the inductor (approximately 0.5 x LLXT x ILIM)2 has to be consumed by the load within the IDLE detection time-out (to stay in ACTIVE mode). It is proportional to the inductance L LXT and to the square of configured OCP current limit. b) At nominal operation, the power which is transferred to the output in discontinuous operation depends on the inductance at LLXT, the current which is build up during TON,MIN and the duty-cycle IDLE condition. This detection mechanism allows to shift the detection threshold proportional to 1/L LXT. Note, that the output power in this case also depends on the square of charging voltage VVIN-VOUT, which may require to adapt LLXT to the typical application input voltage. c) In general, cross-coupling between high voltage switching of LXT and input SENSE is to be avoided. In case that practically it may not be completely avoidable, a third effect based on the amount of coupling must be considered. Distortions can lead to self-excitation of the regulator, charging the output until the lower end of the output volt- age ripple crosses the regulation point. The average of the output voltage ripple (1/2 for triangular ripple) has to be discharged by the load before a time-out is detected (typ. 110µs - to stay in ACTIVE mode). Depending on choice of external components, the rectification / free-wheeling diode leakage current has to be taken into account, because it poses a load to E522.0x, too. If it generates sufficient switching activity to trigger the duty cycle IDLE condition, the converter will provide nominal output voltage.

9.2.7 Over-Current Configuration at OCP

9.2.8 VIN Capacitor Selection

VIN input capacitance value can be chosen from an acceptable voltage ripple V VIN,RIPPLE,MAX (defined by the overall application requirements) together with ILIM (configured by ROCP) and the ESR of VIN capacitor by Both, the result of above equation, but also a minimum of 22µF are to be taken into account. Additionally, a paral- lel low ESR and low ESL ceramic capacitor type has to be placed (typ. 220nF). Considerations regarding temperature and voltage dependency apply to VIN capacitors as well (see chapter 9.2.4), especially voltage dependency. To adjust the internal over-current limitation of the LXT high-side driver to a value of ILIM, the resistor between OCP and GND can be chosen by interpolation between the specified values (in the range of 24kΩ to 60kΩ) by Choice the current ILIM with respect to the maximum usable current of the inductor LLXT. Capacitive load at pin OCP has to be avoided due to stability reasons. It must not exceed 100pF. CVIN ILIM tON,MIN VVIN , RIPPLE, MAX ILIM RESR, CVIN ROCP=IOCP ,24k Ω ILIM ⋅24k Ω ∣ I LIM⩽IOCP ,24 k Ω

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9.2.10 Misc Application Remarks

Optional, regarding VIN voltage supervision, the accurate threshold at pin ON can be used to implement under- voltage lock-out for the converter, automatically switching to sleep mode if necessary. In such cases a resistive di- vider between VIN and GND, connected to ON can be used. The threshold is defined by Choose the divider impedance significantly lower than the typical input impedance of 7MΩ at pin ON to avoid in- accuracy. Note, that the divider current directly contributes to the application current consumption. For reverse polarity protection a diode (or comparable reverse voltage protection measure) for VIN is recommend- ed. In EMC sensitive environments additional decoupling measures at VIN are recommended.

10 Product Ordering Information

Consider the leakage current of the free-wheeling diode for a reverse voltage of VOUT and the maximum ambient temperature. The above described measures a,b,c (in most cases choice of inductance L LXT ) can be used to adapt the applications dimensioning to this additional load. VVIN ,MIN VON ,TH 1 R2 R1= Product Order. No.: 5V 3.3V 1.5 to 40V 1000mA 500mA 350mA QFN20L4 TSSOP16 Yes No E522.01     E52201A52C     E52201A52CXX2     E52201A65B E522.02     E52202A52C     E52202A52CXX2     E52202A65B E522.03     E52203A52C     E52203A52CXX2     E52203A65B E522.04     E52204A52C     E52204A52CXX2     E52204A65B E522.05     E52205A52C     E52205A52CXX2     E52205A65B E522.06     E52206A52C     E52206A52CXX2     E52206A65B E522.07     E52207A52C     E52207A52CXX2 E522.08     E52208A52C     E52208A52CXX2 E522.09     E52209A52C     E52209A52CXX2

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11.1 Package Reference QFN20L4

11.2 Package Reference TSSOP16

The E522.0x family members are available in a Pb free, RoHS compliant, QFN20L4 plastic package. For dimension details refer to JEDEC MO-220 VGGD-5. The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020C. It has been qualified according to IEC 86 part 2-20 for the following soldering profile: 1. (200±5) °C, dwell time (50±5) s 2. (260±5) °C, dwell time <10 s The E522.0x family members are available in a Pb free, RoHS compliant, TSSOP16 plastic package. For dimension details refer to JEDEC MO-153 AB. The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020C. It has been qualified according to IEC 86 part 2-20 for the following soldering profile: 1. (200±5) °C, dwell time (50±5) s 2. (260±5) °C, dwell time <10 s 70 80 90 100 110 120 130 140 0,1 0,2 0,3 0,4 0,5 0,6 E522.01-06 max. Package Power Dissipation max. Device Power vs Ambient Temperature max Power QFN20L4 max Power TSSOP16 max Power TSSOP16 Ext. Heatsink 30K/W max Power TSSOP16 Ext. Heatsink 10K/W Ambient Temperature [°C] Po wer [W Figure 9: Package power dissipation E522.01-06

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

11.3 Package Marking for QFN and TSSOP Packages ( Top Side )

Figure 10: Package power dissipation E522.07-09 70 80 90 100 110 120 130 140 0,4 0,5 0,6 0,7 0,8 0,9 1,1 1,2 E522.07/08/09 max. Package Power Dissipation Device Power vs Ambient Temperature max Pow er QFN20L4 Ambient Temperature [°C] Package Power Dissipation [W] ÿ Elmos (Letter) ÿ 52201 ÿ XXXSL ÿ YWWR@ Signature Explanation

52201 Elmos project number

A Elmos project revision code XXX Production lot number S Assembler code YWW Year and week of assembly R Mask revision code @ Elmos internal code

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

11.4 Package Outline QFN20L4

PACKAGE OUTLINE SPECIFICATION Date : 05.01.2012 Author: ASto

20 Lead Quad Flat Non Leaded Package

(QFN20L4) QM-No.: 08SP0689.02 Package Outline and Dimensions are according JEDEC MO-220 K, variant VGGD-5 Description Symbol mm inch min typ max min typ max Thickness of terminal leads, including lead finish A3 -- 0.20 REF -- -- 0.0079 REF -- Package length / width D / E -- 4.00 BSC -- -- 0.157 BSC -- Lead pitch e -- 0.50 BSC -- -- 0.020 BSC -- Number of terminal positions N 20 20 Note: the mm values are valid, the inch values contains rounding errors Note 1: for assembler specific pin1 identification please see QM-document 08SP0363.xx (Pin 1 Specification) Page 1 of 1

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

11.5 Package Outline TSSOP16

PACKAGE OUTLINE SPECIFICATION Date : 04.01.2012 Author: ASto

16 Lead Thin Shrink Small Outline Package

(TSSOP16) QM-No.: 08SP0669.05 Package Outline and Dimensions are according JEDEC MO-153 F, variant AB. Description Symbol mm inch min typ max min typ max Package height A -- -- 1.20 -- -- 0.047 Stand off A1 0.05 -- 0.15 0.002 -- 0.006 Width of terminal leads, inclusive lead finish b 0.19 -- 0.30 0.007 -- 0.012 Thickness of terminal leads, inclusive lead finish c 0.09 -- 0.20 0.004 -- 0.008 Package width E 6.40 BSC 0.252 BSC Lead pitch e 0.65 BSC 0.026 BSC Angle of lead mounting area phi [°] 0 -- 8 0 -- 8 mold release angle phi1 [°] 12 REF 12 REF Number of terminal positions N 16 16 Note: the mm values are valid, the inch values contains rounding errors Note 1: for assembler specific pin1 identification please see QM-document 08SP0363.xx (Pin 1 Specification) Page 1 of 1

Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 PRODUCTION DATA - AUG 13, 2015 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

12 Functional Safety

The development of this product is based on a process according to an ISO/TS16949 certified quality management system. Functional safety requirements according to ISO 26262 have not been submitted to Elmos and therefore have not been considered for the development of this product.

WARNING – Life Support Applications Policy Elmos Semiconductor AG is continually working to improve the quality and reliability of its products. Neverthe- less, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vul- nerability to physical stress. It is the responsibility of the buyer, when utilizing Elmos Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an Elmos Semiconductor AG Product could cause loss of human life, body injury or damage to property. In the development of your design, please ensure that Elmos Semiconductor AG products are used within speciﬁ ed operating ranges as set forth in the most recent product speciﬁ cations. General Disclaimer Information furnished by Elmos Semiconductor AG is believed to be accurate and reliable. However, no responsibil- ity is assumed by Elmos Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Elmos Semiconductor AG. Elmos Semiconductor AG reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability. Application Disclaimer Circuit diagrams may contain components not manufactured by Elmos Semiconductor AG, which are included as means of illustrating typical applications. Consequently, complete information sufﬁ cient for construction purpos- es is not necessarily given. The information in the application examples has been carefully checked and is believed to be entirely reliable. However, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of Elmos Semiconductor AG or others. Contact Information Headquarters Elmos Semiconductor AG Heinrich-Hertz-Str. 1 • D-44227 Dortmund (Germany) : +492317549100 : sales-germany@elmos.com  : www.elmos.com Sales and Application Support Ofﬁ ce North America Elmos NA. Inc.

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MI 48334 (USA) : +12488653200 : sales-usa@elmos.com Sales and Application Support Ofﬁ ce China Elmos Semiconductor Technology (Shanghai) Co., Ltd. Unit 16B, 16F Zhao Feng World Trade Building, No. 369 Jiang Su Road, Chang Ning District, Shanghai, PR China, 200050 : +86216210 0908 : sales-china@elmos.com Sales and Application Support Ofﬁ ce Korea Elmos Korea B-1007, U-Space 2, #670 Daewangpangyo-ro, Sampyoung-dong, Bunddang-gu, Sungnam-si Kyounggi-do 463-400 Korea : +82317141131 : sales-korea@elmos.com Sales and Application Support Ofﬁ ce Japan Elmos Japan K.K. BR Shibaura N Bldg. 7F 3-20-9 Shibaura, Minato-ku, Tokyo 108-0023 Japan : +81334517101 : sales-japan@elmos.com Sales and Application Support Ofﬁ ce Singapore Elmos Semiconductor Singapore Pte Ltd. 3A International Business Park #09-13 ICON@IBP • 609935 Singapore : +65 6908 1261 : sales-singapore@elmos.com © Elmos Semiconductor AG, 2015. Reproduction, in part or whole, without the prior written consent of Elmos Semiconductor AG, is prohibited. Elmos Semiconductor AG Data Sheet QM-No.: 25DS0064E.03 Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. PRODUCTION DATA - AUG 13, 2015 LOW QUIESCENT CURRENT STEP DOWN CONVERTER FAMILY

Product Information

E522.01 specifications and overview.

Summary

Wide input voltage range 4.5V to 40V

Description

Wide input voltage range 4.5V to 40V

Source title E522.01 Datasheet(PDF) - ELMOS Semiconductor AG

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