E50A21VBS KEC | Alldatasheet

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Technical content

  1. 4. 16 1/1 SEMICONDUCTOR TECHNICAL DATA E50A21VBS, E50A21VBR STACK SILICON DIFFUSED DIODE Revision No : 5 ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

¡¤Average Forward Current : IO=50A. ¡¤Zener Voltage : 21V(Typ.) POLARITY E50A21VBS (+ Type) E50A21VBR (- Type) MAXIMUM RATING (Ta=25¡É) DIM MILLIMETERS B-PF F11.5 MAX F12.75+0.09-0.00 F1.3 0.04 4.2 0.2 8.0 0.2 TYP 0.5 F10.0 0.2 0.4 0.1x45 0.2+0.1 28.35 0.5 A

8.5 MAXH

B C D E F G H I J K F E I D G B J K A ELECTRICAL CHARACTERISTICS (Ta=25¡É) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IFM=100A - - 1.05 V Zener Voltage VZ IZ=10mA 19 21 23 V Reverse Current IR VR=18V - - 0.3 ¥ìA Transient Thermal Resistance ¥ÄVF IFM=100A, IM=100mA, Pw=100mS - - 60 mV Breakdown Voltage Vbr Irsm=55A, Pw=10mS - - 32 V Temperature Coefficient ¥áT IZ=10mA - 15.7 - mV/¡É Reverse Leakage Current Under High Temperature HIR Ta=150¡É, VR=18V - - 100 ¥ìA Temperature Resistance Rth DC total junction to case - - 0.6 ¡É/W CHARACTERISTIC SYMBOL RATING UNIT Average Forward Current IF(AV) 50 A Peak 1 Cycle Surge Current IFSM 380 (60Hz) A Non-Repetitive Peak Reverse Surge Current (10mS) IRSM 55 A Transient Peak Reverse Voltage VRSM 19 V Peak Reverse Voltage VRM 16 V Junction Temperature Tj -40¡­215 ¡É Storage Temperature Range Tstg -40¡­215 ¡É