E35A37VBS KEC | Alldatasheet

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Technical content

  1. 1. 30 1/1 SEMICONDUCTOR TECHNICAL DATA E35A37VBS, E35A37VBR STACK SILICON DIFFUSED DIODE Revision No : 1 ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

ᴌAverage Forward Current : IO=35A. ᴌZener Voltage : 37V(Typ.) POLARITY E35A37VBS (+ Type) E35A37VBR (- Type) MAXIMUM RATING (Ta=25ᴱ) DIM MILLIMETERS B-PF Φ11.5 MAX Φ12.75+0.09-0.00 Φ1.3 0.04 4.2 0.2 8.0 0.2 TYP 0.5 Φ10.0 0.2 0.4 0.1x45 0.2+0.1 28.35 0.5 A

8.5 MAXH

B C D E F G H I J K F E I D G B J K A ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IFM=100A - - 1.15 V Zener Voltage VZ IZ=10mA 34 37 40 V Reverse Current IR VR=32V - - 10 ỌA Transient Thermal Resistance ẤVF IFM=100A, IM=100mA, Pw=100mS - - 70 mV Breakdown Voltage Vbr Irsm=35A, Pw=10mS - - 55 V Temperature Coefficient ềT IZ=10mA - 27 - mV/ᴱ Reverse Leakage Current Under High Temperature HIR Ta=150ᴱ, VR=32V - - 100 ỌA Temperature Resistance Rth DC total junction to case - - 0.8 ᴱ/W CHARACTERISTIC SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 300 (60Hz) A Repetitive Peak Reverse Surge Current (Pulse width=10mS) IRSM 35 A Transient Peak Reverse Voltage VRSM 34 V Peak Reverse Voltage VRM 32 V Junction Temperature Tj -40ᴕ215 ᴱ Storage Temperature Range Tstg -40ᴕ215 ᴱ