E35A2CPS KEC | Alldatasheet

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Technical content

  1. 10. 9 1/1 SEMICONDUCTOR TECHNICAL DATA E35A2CPS, E35A2CPR STACK SILICON DIFFUSED DIODE Revision No : 0 ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

Average Forward Current : IO=35A. Reverse Voltage : 200V(Min.) POLARITY E35A2CPS (+ Type) E35A2CPR (- Type) MAXIMUM RATING (Ta=25 DIM MILLIMETERS A B D E 1.55 PF Φ 11.7+0.1/-0 3.85+0/-0.2 Φ 1.45 0.1 D B G E A 0.5 3.1

8.4 MAX

G 0.32 MILLIMETERSDIM DIM MILLIMETERSTYPE R S POLARITY 21.5+0/-1.5 17.5+0/-1.5 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IFM=100A - - 1.15 V Reverse Voltage VR IR=5mA 200 - - V Reverse Current IR VR=200V - - 50 A Reverse Recovery Time trr IF=0.1A, IR=0.1A - - 15 S Reverse Leakage Current Under High Temperature HIR Ta=150 , VR=200V - - 2.5 mA Temperature Resistance Rth Junction to Case - 0.83 - Junction to Fin - 1.03 - CHARACTERISTIC SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 360 (60Hz) A Repetitive Peak Reverse Voltage VRRM 200 V Junction Temperature Tj -40 200 Storage Temperature Range Tstg -40 200