E35A27VBS KEC | Alldatasheet

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Technical content

  1. 4. 16 1/1 SEMICONDUCTOR TECHNICAL DATA E35A27VBS, E35A27VBR STACK SILICON DIFFUSED DIODE Revision No : 4 ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

¡¤Average Forward Current : IO=35A. ¡¤Zener Voltage : 27V(Typ.) POLARITY E35A27VBS (+ Type) E35A27VBR (- Type) MAXIMUM RATING (Ta=25¡É) DIM MILLIMETERS B-PF F11.5 MAX F12.75+0.09-0.00 F1.3 0.04 4.2 0.2 8.0 0.2 TYP 0.5 F10.0 0.2 0.4 0.1x45 0.2+0.1 28.35 0.5 A

8.5 MAXH

B C D E F G H I J K F E I D G B J K A ELECTRICAL CHARACTERISTICS (Ta=25¡É) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IFM=100A - - 1.10 V Zener Voltage VZ IZ=10mA 24 27 29 V Reverse Current IR VR=20V - - 0.2 ¥ìA Transient Thermal Resistance ¥ÄVF IFM=100A, IM=100mA, Pw=100mS - - 70 mV Breakdown Voltage Vbr Irsm=42A, Pw=10mS - - 34 V Temperature Coefficient ¥áT IZ=10mA - 15.7 - mV/¡É Reverse Leakage Current Under High Temperature HIR Ta=150¡É, VR=20V - - 100 ¥ìA Temperature Resistance Rth DC total junction to case - - 0.8 ¡É/W CHARACTERISTIC SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 300 (60Hz) A Non-Repetitive Peak Reverse Surge Current (10mS) IRSM 42 A Transient Peak Reverse Voltage VRSM 22 V Peak Reverse Voltage VRM 20 V Junction Temperature Tj -40¡­215 ¡É Storage Temperature Range Tstg -40¡­215 ¡É