E35A27VBCS CRYSTEKCRYSTAL | Alldatasheet

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Technical content

  1. 5. 23 1/1 SEMICONDUCTOR TECHNICAL DATA E35A27VBCS, E35A27VBCR STACK SILICON DIFFUSED DIODE Revision No : 0 ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

hAverage Forward Current : IO=35A. hZener Voltage : 27V(Typ.) POLARITY E35A27VBCS (+ Type) E35A27VBCR (- Type) MAXIMUM RATING (Ta=25) DIM MILLIMETERS C-PF Φ9.55 MAX *Note Φ10.1+0.09-0.00 Φ1.3 0.04 3.2 0.2 6.2 0.1 TYP 0.4 8.66 0.2 0.389 0.1x45 0.2+0.1 A

6.7 MAXH

B C D E F G H I J Φ6.10(+0, -0.03)L K F E I D G L B J K A *Note CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IFM=100A - - 1.10 V Zener Voltage VZ IZ=10mA 24 27 29 V Reverse Current IR VR=20V - - 0.2 ǺA Transient Thermal Resistance ǚVF IFM=100A, IM=100mA, Pw=100mS - - 80 mV Breakdown Voltage Vbr Irsm=42A, Pw=10mS - - 34 V Temperature Coefficient ǯT IZ=10mA - 15.7 - mV/ Reverse Leakage Current Under High Temperature HIR Ta=150, VR=20V - - 100 ǺA Temperature Resistance Rth DC total junction to case - - 0.8 /W CHARACTERISTIC SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 300 (60Hz) A Non-Repetitive Peak Reverse Surge Current (10mS) IRSM 42 A Transient Peak Reverse Voltage VRSM 22 V Peak Reverse Voltage VRM 20 V Junction Temperature Tj -40q215  Storage Temperature Range Tstg -40q215  Item Length(K) E35A27VBCS 20.35‚0.5 E35A27VBCR 28.35‚0.5 ELECTRICAL CHARACTERISTICS (Ta=25)