E35A23VDS_15 KEC | Alldatasheet
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Technical content
- 7. 11 1/1 SEMICONDUCTOR TECHNICAL DATA E35A23VDS, E35A23VDR STACK SILICON DIFFUSED DIODE Revision No : 0 ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
hAverage Forward Current : IO=35A. hZener Voltage : 23V(Typ.) POLARITY E35A23VDS (+ Type) E35A23VDR (- Type) MAXIMUM RATING (Ta=25) DIM MILLIMETERS A B C PD 9.5 0.2 8.4 0.2 1.2 R0.5 Φ1.5 5 0.4 G F 3.1 0.1 MILLIMETERSDIM E DIM MILLIMETERSTYPE R S POLARITY 23.0 1.0 19.0 1.0 A B E C D F G +_ +_ ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=100A - - 1.15 V Reverse Voltage VZ IR=10mA 20 23 26 V Repetitive Peak Reverse Current IRRM VR=17V - - 10 ǺA Zener Voltage Temperature Coefficient ǯT IZ=10mA - 0.077 - %/ Reverse Leakage Current Under High Temperature HIR Ta=150, VR=VRM - - 2.5 mA Temperature Resistance Rth Junction to case - 0.8 - /W CHARACTERISTIC SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 350 (10ms Condition) A Repetitive Peak Revese Voltage VRRM 17 V Junction Temperature Tj -40q200 Storage Temperature Range Tstg -40q200