E25A2CPS KEC | Alldatasheet

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Technical content

  1. 2. 19 SEMICONDUCTOR TECHNICAL DATA E25A2CPS, E25A2CPR STACK SILICON DIFFUSED DIODE Revision No : 0 ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V(Min.) POLARITY E25A2CPS (+ Type) E25A2CPR (- Type) MAXIMUM RATING (Ta=25ᴱ) DIM MILLIMETERS A B D E 1.55 PF Φ11.7+0.1/-0 3.85+0/-0.2 Φ1.45 0.1 D B G E A 0.5 3.1

8.4 MAX

G 0.32 MILLIMETERS DIM DIM MILLIMETERS TYPE R S POLARITY 21.5+0/-1.5 17.5+0/-1.5 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=100A 1.18 V Reverse Voltage VRM IR=5mA 200 V Repetitive Peak Reverse Current IRRM VR=200V ỌA Reverse Recovery Time trr IF=-IR 100mA ỌS Transient Thermal Resistance ẤVF IFM=100A, Im=100mA, Pt=100mS 150 mV Reverse Leakage Current Under High Temperature HIR Ta=150ᴱ, VR=VRM 2.5 mA Temperature Resistance Rth Junction to Case 0.93 ᴱ/W Junction to Fin 1.13 CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 200 V Non-Repetitive Peak Reverse Voltage PRM 1.35 (Pulse duration 30ỌS Non-repetitive) kW Average Forward Current IF(AV) A Peak 1 Cycle Surge Current IFSM 250 (10mS Condition Half sine wave 1 cycle) A Junction Temperature Tj -40ᴕ200 ᴱ Storage Temperature Range Tstg -40ᴕ200 ᴱ