E1A FS | Alldatasheet

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2012 08 30 1/2Revision No : 0 SEMICONDUCTOR TECHNI CAL DATA E1A ~ E1J Super Fast Recovery Rectifie r Diode ■ Features ■ Outline Dimensions

  • Io 1.0A
  • VRRM 50V~600V
  • Glass passivated chip
  • High surge forward current capability ■ Applications
  • For general power supply single-phase rectifier Limiting Values(Absolute Maximum Rating) Item Symbol Unit Conditions A B D F G J Repetitive Peak Reverse Voltage VRRM V 50 1 00 2 00 300 400 600 Average Rectified Output Current IO A 60Hz One-way half-wave, R-load,Ta=75℃ 1.0 Surge(Non-repeti ive) Forward Current IFSM A 60HZ sine wave, 1 cycle, Tj=25℃ 30 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ -55 ~+150 ■ Electrical Characteristics(Ta=25℃ Unless otherwise specified) Item Symbol Unit Test Condition A B D F G J Peak Forward Voltage VFM V IFM=1.0A 1.0 1.3 1.7 Maximum reverse recovery ime trr ns IF=0.5A,IR=1.0A,IRR 5 3 A 5 2 . 0 = Peak Reverse Current IRRM μA VRM=VRRM , Ta=25℃ 5 Thermal Resistance RθJ-L ℃/W Between junction and lead 20 Dimensions in inches and (millimeters) SOD-123FL .112(2.85) .100(2.55) .047(1.20) .039(1.00) .035(0.90) .016(0.40) .010(0.25) .004(0.10) .154(3.90) .142(3.60) .043(1.10) .035(0.90) .075(1.90) .063(1.60) .002(0.05) .001(0.02)

E1A ~ E1J 2012 08 30 2/2Revision No : 0 ■ Characteristics(Typical) 0 20 40 60 80 100 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=25℃ FIG4 Typical Reverse Characteristics 0 2 Io(A) Ta℃) FIG1 Io-Ta Curve 160 Single Phase Half Wave 60Hz Resistive Load 40 80 120 0.4 0 6 0 8 1.0 1 2 IFSM(A) 2 5 10 20 50 100 FIG2 Surge Forward Current Capadility Number of Cycles g a VR D RLIF IF IR IRR t trr I FIG.5 Diagram of circuit and Testing wave form of reverse re covery time