DZT953-13

DZT953_1 DIODES | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DZT853)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2) Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate) SOT-223 BASE NEW P PRORO COLLECTOR EMITTER TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Continuous Collector Current IC -5 A Peak Pulse Collector Current ICM -10 A Power Dissipation PD 1(Note 3) 3(Note 4) W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB, pad layout as shown on page 4. 4. The power which can be dissipated, assuming the device is mounted in a typical manner on a PCB with copper equal to 4 square inch minimum. DS30941 Rev. 6 - 2 1 of 4 www.diodes.com DZT953 © Diodes Incorporated

Electrical Characteristics @TA = 25°C unless otherwise specified NEW PRODUCT Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO -140 -165 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -100 -120 ⎯ V IC = -10mA*, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -6 -9 ⎯ V IE = -100μA, IC = 0 Collector Cutoff Current ICBO ⎯ ⎯ -50 nA μA VCB = -100V, IE = 0 VCB = -100V, IE = 0, TA = 100°C Emitter Cutoff Current IEBO ⎯ ⎯ -10 nA VEB = - 6V, IC = 0 ON CHARACTERISTICS Collector-Emitter Saturation Voltage VCE(SAT) -18 -70 -125 -260 -50 -115 -220 -420 mV I C = -100mA, IB = -10mA* IC = -1A, IB = -100mA* IC = -2A, IB = -200mA* IC = -4A, IB = -400mA* Base-Emitter Saturation Voltage VBE(SAT) ⎯ -960 -1170 mV IC = -4A, IB = -400mA* Base-Emitter Turn-On Voltage VBE(ON) ⎯ -880 -1160 mV ICE = -4A, VCE = -1V* DC Current Gain hFE 100 100 220 200 100 300 IC = -10mA, VCE = -1V* IC = -1A, VCE = -1V* IC = -3A, VCE = -1V* IC = -4A, VCE = -1V* IC = -10A, VCE = -1V* SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT ⎯ 125 ⎯ MHz IC = -100mA, VCE = -10V, f = 50MHz Output Capacitance Cobo ⎯ 65 ⎯ pF VCB = -10V, f = 1MHz SWITCHING CHARACTERISTICS Switching Times ton toff ⎯ 65 100 ⎯ ns IC = -2A, IB1 = -200mA IB2 = 200mA, VCC = -10V *Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2% 0 25 50 75 100 125 150 P , POWER DISSIPATION (W)D T , AMBIENT TEMPERATURE ( C)A ° R = 125°CθJA Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 0.4 0.8 1.2 1.6 2.0 0 12 3 4 5 I = - 8 m AB I = - 1 0 m AB I = - 2 m AB I = - 4 m AB I = - 6 m AB -I , COLLECTOR CURRENT (A)C -V , COLLECTOR-EMITTER VOLTAGE (V)CE Fig 2. Collector Current vs. Collector Emitter Voltage DS30941 Rev. 6 - 2 2 of 4 www.diodes.com DZT953 © Diodes Incorporated

0.01 0.1 1 10 -I , COLLECTOR CURRENT(A)C h, D C CURRENT GAINFE T = 8 5 CA ° T = 1 5 0 CA ° T = 2 5 CA ° V = - 1 VCE T = - 5 5 CA ° Fig. 3 Typical DC Current Gain vs. Collector Current 0.2 0.4 0.6 0.8 0.01 0.1 1 10 -I , COLLECTOR CURRENT (A)C -V , COLLECTOR-EMITTER SATURATION VOLTAGE (V) CE(SAT) T = 1 5 0 CA ° T = 8 5 CA ° I/ I = 1 0CB T = - 5 5 CA ° T = 2 5 CA ° Fig. 4 Collector-Emitter Saturation Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 -I , COLLECTOR CURRENT (A)C -V , BASE-EMI TTER TURN-ON VOLTAGE (V)BE(ON) T = - 5 5 CA ° T = 150 CA ° T = 8 5 CA ° T = 2 5 CA ° V = - 1 VCE Fig. 5 Base-Emitter Turn-On Voltage vs. Collector Current -I , COLLECTOR CURRENT (A)C -V , BASE-EMITTER SATURATION VOLTAGE (V)BE(SAT) T = - 5 5 CA ° T = 150 CA ° T = 8 5 CA ° T = 2 5 CA ° I/ I = 1 0CB Fig. 6 Base-Emitter Saturation Voltage vs. Collector Current NEW PRODUCT Ordering Information (Note 5) Device Valid Marking Codes Packaging Shipping DZT953-13 DZT953 SOT-223 2500/Tape & Reel DZT953-13 PT06 SOT-223 2500/Tape & Reel Marking Information DZT953 YM (Top View) DZT953 or PT06= Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year 2006 2007 2008 2009 2010 2011 2012 Code T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30941 Rev. 6 - 2 3 of 4 www.diodes.com DZT953 © Diodes Incorporated

Package Outline Dimensions NEW PRODUCT SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout: (Unit:mm) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. Diodes Incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30941 Rev. 6 - 2 4 of 4 www.diodes.com DZT953 © Diodes Incorporated