DZDH0401DW
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 10
Technical content
Features
- Max Input Voltage: 40V
- Peak Bias Current: -300mA
- Max Reverse Voltage Protection: 50V
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
- Package: SOT363
- Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin Finish. Solderable per MIL-STD-202, Method 208
- Weight: 0.006 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Marking Reel Size (inches) Tape Width (mm) Packing Qty. Carrier DZDH0401DW-7 SOT363 2M4 7 8 3,000 Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Typical Configuration Pinout SOT363 Top View
Document number: DS42784 Rev. 3 - 2 2 of 10 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DZDH0401DW Marking Information Date Code Key Year 2020 - 2026 2027 2028 2029 2030 2031 2032 2033 2034 2035 Code H - N P R S T U V W X Y Week 1-26 27-52 53 Code A-Z a-z z Absolute Maximum Ratings (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit DRAIN BIAS Voltage VDRAIN-BIAS 40 V SOURCE DRAIN Voltage VSOURCE-DRAIN 50 V BIAS Current IBIAS -300 mA DRAIN Current IDRAIN 300 mA Thermal Characteristics – Total Device (@ TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient (Note 5) RJA 424 ° C/W Thermal Resistance, Junction to Case (Note 5) RJC 111 ° C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Note: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single -sided 1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady state. 2M4 = Product Type Marking Code YW = Date Code Marking Y = Year: 0 to 9 (ex: 6 = 2026) W = Week: A to Z: Week 1 to 26; a to z: Week 27 to 52; z Represents Week 52 and 53 SOT363 YW
Document number: DS42784 Rev. 3 - 2 3 of 10 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DZDH0401DW Thermal Characteristics – Total Device
Document number: DS42784 Rev. 3 - 2 4 of 10 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DZDH0401DW Electrical Characteristics (@ TA = +25° C, unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Condition DRAIN-BIAS Voltage VDRAIN-BIAS 40 78 — V IDRAIN = 100μA SOURCE-DRAIN Voltage VSOURCE-DRAIN 50 84 — V ISOURCE = 100μA DRAIN-REF Voltage VDRAIN-REF — 588 — mV IDRAIN = 100μA SOURCE Current ISOURCE — 11.6 — μA VSOURCE-REF = 0.56V REF-SOURCE Voltage VREF-SOURCE — -554 — mV IREF = -10μA Turn-Off Differential Voltage VT 5 34 80 mV IDRAIN = 100μA; ISOURCE = 10μA REF-SOURCE Voltage (VBIAS low) VREF-SOURCE -250 -472 — mV VBIAS-SOURCE = -5V; IBIAS = -1μA -300 -541 — mV VBIAS-SOURCE = -5V; IBIAS = -10μA REF-SOURCE Voltage (VBIAS high) VREF-SOURCE — -601 -800 mV VBIAS-SOURCE = -0.5V; IBIAS = -100μA — -663 -850 mV VBIAS-SOURCE = -0.5V; IBIAS = -1mA Typical Electrical Characteristics (@ TA = +25° C, unless otherwise specified.) I (μA) Fig.5 hFE vs IC Fig.6 VCE(sat) vs IC Fig.7 VBE(sat) vs IC Fig.8 I vs VF & VBE
Document number: DS42784 Rev. 3 - 2 5 of 10 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DZDH0401DW Typical Application Circuit / Pinout Details / Functional Description Functional Description (Refer to Typical Application Circuit above) Supply Connect As a +Input is applied, the body drain diode of Q1 becomes forward biased. U1 diode holds U1 transistor base at VIN – VF, and so VBE is too low to turn on U1 transistor. As Q1 gate capacitance charges through Rbias, Q1 turns on and RDS decreases causing VDS to decrease and VBE to increase until U1 transistor starts to conduct. This process continues until Q1 RDS reaches its minimum value and U1 transistor VBE cannot increase and IC reaches its maximum. VGS should be high enough at this point to ensure linear operation. Rref and Rbias set the currents through U1 diode and U1 collector respectively so that VF(DIODE) is greater than VBE(on). Supply Disconnect As the + Input is removed, V DS < VT, Q1 is on and V IN = VOUT, causing V REF to fall and U1 VBE > VBE(on) so U1 transistor discharges Q1 gate capacitance and Q1 turns off causing VIN to fall to 0V. Quiescent Current and Isolation With a battery connected at Supply Out, there are two leakage paths back to the Supply In. One is straight through Q1 and the other is through U1emitter-anode. The high reverse breakdown voltage of U1 diode provides a high isolation path. The Rref & Rbias currents bias U1 transistor on which keeps Q1 off. These resistors’ values are chosen to minimize quiescent current operation of the circuit. Pin Name Function
1 NC No internal connection
2 REF Reference current to set VF
3 BIAS Reference current to set VBE and control Gate
4 SOURCE VOUT sense voltage
5 NC No internal connection
6 DRAIN VIN sense voltage
This resistor sets the turn-off speed of the FET. The lower the resistance, the more base drive to the transistor, the faster the transistor shorts out the gate to turn off the FET. n/a Rbias This resistor sets the turn-on speed of the FET. When the ideal diode circuit is turning on, the PNP is held off by the diode and FET voltage drops. It is Rbias that pulls the gate low and turns on the FET. n/a Rbias : Rref Ideal diode Turn-Off threshold voltage VT α Rbias / Rref n/a Vref Voltage across Rref Typical Charging Conditions (TA = +25° C, VBATT = 14V, switch closed, ISUPPLY = 3A) Parameter Symbol Typ Unit Input Voltage VIN 14.1 V Input Current IIN 3 A Output Voltage VOUT 14 V Output Current IOUT 3.0 A Diode Forward Voltage VF 0.6 V Diode forward Current IF 135 μA Reference Voltage VREF 13.4 V Reference Current IREF 136.6 μA Base Current IB 1.6 μA Emitter Current IE 12.1 μA Bias Voltage VBIAS 10.5 V Collector Current IC 10.5 μA Operating Current ICC 147 μA Typical Non-Charging Conditions (TA = +25° C, VBATT = 14V, switch open, ISUPPLY = 3A) Parameter Symbol Typ Unit Input Voltage VIN — μV Input Current IIN — A Output Voltage VOUT 14 V Output Current IOUT — A Diode Forward Voltage VF — V Diode forward current IF 0 μA Reference Voltage VREF 13.3 V Reference Current IREF 133 μA Base Current IB 133 μA Emitter Current IE 145 μA Bias Voltage VBIAS 13.94 V Bias Current IBIAS 13.94 μA Operating Current ICC 147 μA Typical Application Circuit
Document number: DS42784 Rev. 3 - 2 6 of 10 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DZDH0401DW Typical Application Circuit / Pinout Details / Functional Description (continued) Timing Switching speed is affected by pMOS characteristics, Rbias, Rref, and operating voltage. Using the typical application circuit, we can see how modifying values can affect the timing in the simulations below. 200μSecs/div 200μSecs/div
Document number: DS42784 Rev. 3 - 2 7 of 10 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DZDH0401DW Typical Application Circuit / Pinout Details / Functional Description (continued) 200μSecs/div 200μSecs/div μA
Document number: DS42784 Rev. 3 - 2 8 of 10 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DZDH0401DW Typical Application Circuit / Pinout Details / Functional Description (continued) Ideal Diode Power Saving The typical voltage drop across a standard diode rectifier means higher power dissipation and more heat to manage. This both wastes power and significantly drops the potential on low voltage rails. Example: A diode rectifier with a typical forward voltage VF = 0.55V carrying 3A current would dissipate 1.65W (I x VF). Whereas with pMOSFET such as the DMP4047LFDE that has an RDS(ON) of 33mΩ, the power dissipation reduces to only 0.29W (I2 x R). Hence, very low RDS(ON) Power MOSFETs can replace the standard rectifiers and the DZDH0401DW controls the MOSFET as an ideal diode. N+1 Redundancy ORing Controller Critical systems require a fault-tolerant power supply that can be achieved by paralleling two or more PSUs into an (N+1) redundancy configuration. During normal operation, usually all PSUs equally share the load for maximum reliability. If one of the PSU s is unplugged or fails, then the other PSUs fully support the load. To avoid the faulty PSU from affecting the common bus, an ORing rectifier blocks the reverse current flow into the faulty PSU. Likewise, during hot swap, the ORing rectifiers isolate a PSU’s discharged output capacitors from the common bus.
Document number: DS42784 Rev. 3 - 2 9 of 10 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DZDH0401DW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 Dimensions Value (in mm) C 0.650 G 1.300 X 0.420 Y 0.600 Y1 2.500 e D L b E F c a Y1 G Y X C
Document number: DS42784 Rev. 3 - 2 10 of 10 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. DZDH0401DW IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incor porate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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