DW01 ETC2 | Alldatasheet
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One Cell Lithium-ion/Polymer Battery Pr otection IC GGeenneerraall DDeessccrriippttiioonn OOrrddeerriinngg IInnffoorrmmaattiioonn DW01+ The DW01 P lus battery protection IC is design ed to protect lithium-ion/p olymer battery from damage or degrading the lifetime due to overcharg e, overdischarge, and/o r ov ercurrent for on e-cell lithium-ion/polymer battery powered systems, such as cellular phones. PACKAGE TYPE SOT-23-6 TEMPERATURE RANGE -40°C~+85°C The ultra-sm all p ackage and le ss re quired external components make it ideal to integrate the DW01 Plu s into the limited sp ace of battery p ack. The accu rate ±50mV overcharging d etection volt age ensures safe and full utilization charging. The very low st andby current drain s little curre nt from the cell while in storage. OVERCHARGE PROTECTION 4.3V± 50mV FFeeaattuurreess AApppplliiccaattiioonnss z Reduction in Board Size due to Miniature Package SOT-23-6. z Protection IC for One-Cell Lithium-Ion / Lithium-Polymer Battery Pack z Ultra-Low Quiescent Current at 3μA (Vcc=3.9V). z Ultra-Low Power-Down Current at 0.1μA (Vcc=2.0V). z Precision Overcharge Protection Voltage 4.3V ± 50mV for the DW01 Plus z Load Detection Function during Overcharge Mode. z Two Detection Levels for Overcurrent Protection. z Delay times are generated by internal circuits. No external capacitors required. Fortune Semiconductor Co. TEL : +886-2-2809-4742 1/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC PPrroodduucctt NNaammee LLiisstt Package Model SOT-23-6 Overcharge detection voltage [VOCP] (V) Overcharge release voltage [VOCR] (V) Overdischarge detection voltage [VODP] (V) Overdischarge release voltage [VODR] (V) Overcurrent detection voltage [VOI1] (mV) PPiinn CCoonnffiigguurraattiioonn 1 2 3 6 4 SOT-23-6 TOP VIEW Pin No. Symbol Description
1 OD MOSFET gate connection pin for discharge control
2 CS Input pin for current sense, charger detect
3 OC MOSFET gate connection pin for charge control
4 TD Test pin for reduce delay time
5 VCC Power supply, through a resistor (R1)
6 GND Ground pin
Fortune Semiconductor Co. TEL : +886-2-2809-4742 2/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC FFuunnccttiioonnaall BBlloocckk DDiiaaggrraamm VSS OC VSS VSS VSS VCC GND CS Charger Detector OD Control Logic Short circuit Detector Over current Detector Oscillator Control CircuitOvercharge Detector Overdischarg e Detector Divider Control Logic TD VSS TTyyppiiccaall AApppplliiccaattiioonn CCiirrccuuiitt DW01 Plus OC OD GND CS BATT- M1 M2 1kΩ 100Ω VCC BATT+ TD 0.1μF Fortune Semiconductor Co. TEL : +886-2-2809-4742 3/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC AAbbssoolluuttee MMaaxxiimmuumm RRaattiinnggss (VSS=0V, Ta=25°C unless otherwise specified) Item Symbol Rating Unit Input voltage between VDD and VSS * VDD VSS-0.3 to VSS+10 V OC output pin voltage VOC VDD-26 to VDD+0.3 V OD output pin voltage VOD VSS-0.3 to VDD+0.3 V CS input pin voltage VCS VDD-26 to VDD+0.3 V Operating Temperature Range TOP -40 to +85 °C Storage Temperature Range TST -40 to +125 °C Note: DW01 Plus contains a circuit that will protect it from static discharge; but please take special care that no excessive static electricity or voltage which exceeds the limit of the protection circuit will be applied to it. Fortune Semiconductor Co. TEL : +886-2-2809-4742 4/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC EElleeccttrriiccaall CChhaarraacctteerriissttiiccss (Ta=25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL Min Typ Max UNIT Supply Current VCC=3.9V ICC 3.0 6.0 μA Power-Down Current VCC=2.0V IPD 0.1 μA Overcharge Protection Voltage DW01 Plus VOCP 4.25 4.30 4.35 V Overcharge Release Voltage VOCR 4.05 4.10 4.15 V Overdischarge Protection Voltage VODP 2.30 2.40 2.50 V Overdischarge Release Voltage VODR 2.90 3.00 3.10 V Overcurrent Protection Voltage VOIP（VOI1） 120 150 180 mV Short Current Protection Voltage VCC=3.6V VSIP（VOI2） 1.25 1.35 1.45 V Overcharge Delay Time TOC 80 200 ms Overdischarge Delay Time VCC=3.6V to 2.0V TOD 20 60 ms Overcurrent Delay Time (1) VCC=3.6V TOI1 10 20 ms Overcurrent Delay Time (2) VCC=3.6V TOI2 5 50 μs Charger Detection Threshold Voltage VCH -1.2 -0.7 -0.2 V OD Pin Output “H” Voltage VDH VCC-0.1 VCC-0.02 V OD Pin Output “L” Voltage VDL 0. 1 0.5 V OC Pin Output “H” Voltage VCH VCC-0.1 VCC-0.02 V OC Pin Output “L” Voltage VCL 0.1 0.5 V Fortune Semiconductor Co. TEL : +886-2-2809-4742 5/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC DDeessccrriippttiioonn ooff OOppeerraattiioonn 1. Overcharge Protection When the voltage of the battery cell exce eds the ov ercharge protection voltage (VOCP) beyond the overcharge delay time (TOC) period, charging is inhibited by turning off of the charge control MOSFET. The overcharge condition is released in two cases: 1) The voltage of the battery cell becomes lower than the overcharge release voltage (VOCR) through self-discharge. 2) The voltage of the battery cell falls below the overcharge protection voltage (VOCP) and a load is connected. When the battery voltage is above V OCP, the overcharge condition w ill not release even a load is connected to the pack. 2. Overdischarge Protection When the voltage of the battery cell go es below the overdischarge protection voltage (VODP) beyond the overdischarge delay time (TOD) period, discharging is inhibited by turning off the discharge control MOSFET. The default of o verdischarge delay time is 10ms. Inhibition of discha rging is imme diately released wh en the voltage of the battery cell bec omes hig her tha n overdi scharge relea se v oltage (VODR) through charging. 3. Overcurrent Protection In normal mode, the DW01 Plus continuously monitors the discharge current by sensing the voltage of CS pin. If th e voltage of CS pin exceed s the overcurrent protection volta ge (V OIP) b eyond th e overcurrent delay time (T OI1) period, the overcu rrent protecti on circuit ope rates and disch arging is inhibited by turning off the discharge control MOSFET. The overcurrent condition returns to the normal mode when the load is released or the impedance between BATT+ and BATT- is larger than 500kΩ. The DW01 P lus provides two over current detection levels (0.15 V and 1.35V) with two overcurren t delay time (TOI1 and TOI2) corresponding to each overcurrent detection level. 4. Charge Detection after Overdischarge When overdischarge occurs, the di scharge control MOSFET turns off an d discharging is inhibited. However, charging is still permitted th rough the parasitic dio de of MOSFET. Once the charger i s connected to the battery pack, the DW01 Plus immediately turns on all the timing generation and detection circuitry. Charging progress is sensed if the voltage between CS and GND is below charge detection threshold voltage (VCH). 5. P ower-Down after Overdischarge When overdischarge occurs, the DW01 Plus will enter into power-down mode, turning off all the timing generation and detection circuitry to reduce the quiescent current to 0.1μA (VCC=2.0V). At the same time, the CS pin is pull-up to VCC through an internal resistor. Fortune Semiconductor Co. TEL : +886-2-2809-4742 6/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC DDeessiiggnn GGuuiiddee 1. Selection of External Control MOSFET Because the overcurrent protection voltage is preset, the threshold current for overcurrent detection is determined by the turn-on re sistance o f the cha rge and di scharge co ntrol M OSFETs. The turn-on resistance of the external control MOSFETs can be determined by the equation: RON=VOIP/ (2 x IT) (IT is the overcurrent threshold current). For example, if the overcurrent threshold current IT is designed to be 3A, the turn-on resi stance of the external control MOSFET must be 25mΩ. Be aware that turn-on resistance of the MOSFET changes with temperature variation due to heat dissipation. It changes with the voltage between gate and sou rce as well. (Turn-on resistance of MOSF ET increa ses as th e voltage between gate an d source de creases). As the turn-on re sistance of the external MOSFET changes, the design of the overcurrent threshold current changes accordingly. 2. Suppressing the Ripple and Disturbance from Charger To suppress the ripple and disturbance from charger, connecting R1 and C1 to VCC is recommended. 3. Protection the CS pin R2 is us ed for lat ch-up protec tion when c harger is connected under overdisc harge condition and overstress protection at reverse connecting of a charger. Fortune Semiconductor Co. TEL : +886-2-2809-4742 7/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC TTiimmiinngg DDiiaaggrraamm 1. Overcharge Condition ÆLoad Discharging Æ Normal Condition VOCP VOCR VODR VODP Charger Load VCC CS VCC GND VCC GND Battery VoltageOC PinOD PinCS Pin TOC TOC VOI1 VCH Fortune Semiconductor Co. TEL : +886-2-2809-4742 8/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC 2. Overdischarge Condition Æ Charging by a Charger ÆNormal Condition VOCP VOCR VODR VODP Charger Load VCC CS VCC GND VCC GND Battery VoltageOC PinOD PinCS Pin TOD TOD VCH VOI2 Fortune Semiconductor Co. TEL : +886-2-2809-4742 9/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC 3. Over Current Condition Æ Normal Condition VOCP VOCR VODR VODP Charger Load VCC CS VCC GND VCC VOI1 Battery VoltageOC PinOD PinCS Pin TOI1 TOI2 GND VOI2 Fortune Semiconductor Co. TEL : +886-2-2809-4742 10/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874
One Cell Lithium-ion/Polymer Battery Pr otection IC Fortune Semiconductor Co. TEL : +886-2-2809-4742 11/11 TD-0405001 Rev . 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 PPaacckkaaggee OOuuttlliinnee e b E D A A1 L θ GAUGE PLANE SEATING PLANE DETAIL A c DETAIL A SYMBOL MIN. TYP. MAX. A b c D E e L θ θ1 3 0 5 1.05 - 1.35 0.05 - 0.15 1.00 1.10 1.20 0.40 - 0.55 0.08 - 0.20 0.35 0.45 0.55 0.95 BSC. 1.90 BSC. 0.60 REF. Unit : mm b2 0.25 - 0.40 2.70 2.90 3.00 2.60 2.80 3.00 1.50 1.60 1.70 θ2 6 8 10