DTV1500HFP

DTV1500HXX STMICROELECTRONICS | Alldatasheet

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Technical content

1/8January 2002 - Ed: 4C n High breakdown voltage capability n High frequency operation n Specified turn on switching characteristics n Very fast recovery diode n Low static and peak forward voltage drop for low dissipation n Insulated package (ISOWATT220AC & TO-220FPAC): Insulating voltage = 2000V DC Capacitance = 12pF n Planar technology allowing high quality and best

electrical characteristics

High voltage diode especially designed for horizontal deflection stage in standard and high resolution displays for TV’s and monitors. This device is packaged in TO-220AC, ISOWATT220AC and TO-220FPAC (insulated package).

DESCRIPTION

I F(AV) 6A VRRM 1500 V VF (max) 1.7 V trr (max) 125 ns MAIN PRODUCTS CHARACTERISTICS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1500 V IF(RMS) RMS forward current 15 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 80 A Tstg Storage temperature - 65 to 150 °C Tj Maximum operating junction temperature 150 °C ABSOLUTE MAXIMUM RATINGS DTV1500Hxx® (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE K A TO-220FPAC DTV1500HFP AK K A ISOWATT220AC DTV1500HF K A TO-220AC DTV1500HD

Symbol Parameter Test Conditions Value Unit Typ Max IR* Reverse leakage current VR = 1500V Tj = 25°C 100 µA Tj = 125°C 100 1000 µA VF* * Forward voltage drop I F = 6A Tj = 25°C 1.5 2.3 V Tj = 125°C 1.25 1.7 pulse test : * tp=5m s , δ <2 % ** tp = 380µs,δ <2 % STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Value Unit R th(j-c) Junction to Case thermal resistance TO-220FPAC 5 °C/W ISOWATT220AC 4 TO-220AC 2 THERMAL RESISTANCE Symbol Parameter Test Conditions Value Unit Typ Max trr Reverse recovery time Tj = 25°C IF =1A d IF/dt = -50A/µs VR = 30V 95 125 ns trr Reverse recovery time Tj = 25°C IF = 100mA IR = 100mA IRR = 10mA 625 ns RECOVERY CHARACTERISTICS Symbol Parameter Test Conditions Value Unit Typ Max tfr Forward recovery time Tj = 100°C I F =6A d I F/ d t=8 0A /µs VFR =3V 350 ns VFp Peak forward voltage Tj = 100°C I F =6 A d IF/ d t=8 0A /µs1 8 2 5V To evaluate the maximum conduction losses use the following equation : P=1 . 3 5xIF(AV)+ 0.059 x IF2(RMS) TURN-ON SWITCHING CHARACTERISTICS

01234560.0 0.5 1.0 1.5 2.0 2.5 Ip(A) PF(av)(W) Fig. 1:Power dissipation versus forward current (triangular waveform,δ = 0.45) 0 25 50 75 100 125 1500 Tcase(°C) IF(av)(A) T δ=tp/T tp Fig. 2-1:Average current versus case tempera- ture, (δ = 0.5) (TO-220FPAC) 0 25 50 75 100 125 1500 Tcase(°C) IF(av)(A) T δ=tp/T tp Fig. 2-2:Average current versus case tempera- ture, (δ = 0.5) (ISOWATT220AC) 0 25 50 75 100 125 1500 Tcase(°C) IF(av)(A) T δ=tp/T tp Fig. 2-3:Average current versus case tempera- ture, (δ = 0.5) (TO-220AC) 5.0 10.0 15.0 VFM(V) IFM(A) Typical Tj=125°C Maximum Tj=25°C Maximum Tj=125°C Fig. 3: Forward voltage drop versus forward curent 1E-3 1E-2 1E-1 1E+00 t(s) IM(A) Tc=100°C IM t δ=0.5 Fig. 4-1:Non repetitive surge peak forward current versus overload duration (TO-220FPAC)

t(s) IM(A) Tc=100°C IM t δ=0.5 Fig. 4-2:Non repetitive surge peak forward current versus overload duration (ISOWATT220AC) 1E-3 1E-2 1E-1 1E+00 t(s) IM(A) Tc=100°C IM t δ=0.5 Fig. 4-3:Non repetitive surge peak forward current versus overload duration (TO-220AC) 200 400 600 800 1000 1200 dIF/dt(A/µs) Qrr(nc) IF= 6A 90% confidence Tj=125°C Fig. 5:Reverse recovery charges versus dIF/dt 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 dIF/dt(A/µs) IRM(A) IF= 6A 90% confidence Tj=125°C Fig. 6:Reverse recovery current versus dIF/dt 0 20 40 60 80 100 120 1400 dIF/dt(A/µs) VFP(V) IF= 6A 90% confidence Tj=125°C Fig. 7:Transient peak forward voltage versus dIF/dt 0 20 40 60 80 100 120 140300 350 400 450 500 550 600 650 700 750 800 dIF/dt(A/µs) tfr(ns) IF= 6A 90% confidence Tj=125°C VFR=3V Fig. 8:Forward recovery time versus dIF/dt

0 20 40 60 80 100 120 1400.0 0.2 0.4 0.6 0.8 1.0 1.2 Tj(°C) VFP IRM Qrr Fig. 9:Dynamic parameters versus junction tem- perature 1 10 100 20010 100 VR(V) C(pF) Tj=25°C F=1MHz Fig. 10:Junction capacitance versus reverse volt- age applied (typical values) 1E-2 1E-1 1E+0 1E+10.1 0.2 0.5 1.0 t(s) K=[Zth(j-c)/Rth(j-c)] δ = 0.5 δ = 0.2 δ = 0.1 Single pulse T δ=tp/T tp Fig. 11-1:Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AC & TO-220FPAC) 1E-3 1E-2 1E-1 1E+00.1 0.2 0.5 1.0 tp(s) K=[Zth(j-c)/Rth(j-c)] δ = 0.5 δ = 0.2 δ = 0.1 Single pulse T δ=tp/T tp Fig. 11-2:Relative variation of thermal impedance junction to case versus pulse duration ( TO-220AC)

REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 H G F D E A B Dia

F G H D E A B Diam REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.40 2.75 0.094 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 H 10.00 10.40 0.394 0.409 L2 16.00 Typ. 0.630 Typ. L3 28.60 30.60 1.125 1.205 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 PACKAGE DATA TO-220AC A C D E M Ø I G F REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ.

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com Type Marking Package Weight Base qty Delivery mode DTV1500HFP DTV1500HFP TO-220FPAC 1.8g 50 Tube DTV1500HF DTV1500HF ISOWATT220AC 2g 50 Tube DTV1500HD DTV1500HD TO-220AC 1.86g 50 Tube n Cooling method: C n Epoxy meets UL94-V0 n Torquevalue: 0.55 m.Ntyp (0.7m.Nmax) n Electrical Isolation: 2000V DC n Capacitance: 12pF