DTNN123J UTC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
UNISONIC TECHNOLOGIES CO., LTD DTNN123J NPN SILICON TRANSISTOR www.unisonic.com.tw 1 of 3 Copyright © 2024 Unisonic Technologies Co., Ltd QW-R208-065.A COMPOUND TRANSISTORS DESCRIPTION The UTC DTNN123J is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with low collector -emitter saturation voltage, etc. FEATURES * Two DTC123J chips in a SOT-363 package * Low collector-emitter saturation voltage * With built-in bias resistors * Simplify circuit design * Silicon epitaxial type. * The internal tow transistor elements are independent. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Package Pin Assignment Packing L e a d F r e e H a l o g e n F r e e 12345 6 DTNN123JL-AL6-R DTNN123JG-AL6-R SOT-363 G1 I1 O2 G2 I2 O1 Tape Reel Note: Pin Assignment: G: GND I: Input O: Output (1) R: Tape Reel (2) AL6: SOT-363 (3) G: Halogen Free and Lead Free, L: Lead Free DTNN123JG-AL6-R (1)Packing Type (2)Package Type (3)Green Package MARKING
DTNN123J NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 o f 3 www.unisonic.com.tw QW-R208-065.A ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage V CC 50 V Input Voltage V IN -5 ~ +12 V Output Current IO 100 mA IC(MAX.) 100 mA Power Dissipation P D 150 mW Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the devi ce could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CO NDITIONS MIN TYP MAX UNIT Input Voltage VI (OFF) V CC=5V, IO=100μA 0.5 V VI (ON) V O=0.3V, IO=5mA 1.1 V Output Voltage V O (ON) I O/II =5mA/0.25mA 0.1 0.3 V Input Current I I V I =5V 3.6 mA Output Current I O(OFF) V CC=50V, VI =0V 0.5 μA DC Current Gain h FE V O=5V, IO=10mA 80 Input Resistance R 1 1.54 2.2 2.86 KΩ Resistance Ratio R 2/R1 1 7 2 1 2 6 Transition Frequency f T V CE =10V, IE=−5mA, f=100MHz (Note) 250 MHz Note: Transition frequency of the device
DTNN123J NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 o f 3 www.unisonic.com.tw QW-R208-065.A TYPICAL CHARACTERISTICS Output Current, IOUT (µA) Input Current, IIN (µA) GND(+) Current, IGND(+) (µA) 0.5 GND(+) Voltage, VGND(+) (V) 100 VIN=0V, OUT OPEN 1000 500 200 100 DC Current Gain vs. Output Current Output Current, IOUT(mA) DC Current Gain, hFE 2 5 10 20 50 100 1 0.2 0.5 0.1 TA= 100°C 25°C -40°C VOUT=5V UTC assumes no responsibility for equipment failures that resul t from using products at values that exceed, even momentarily, rated va lues (such as maximum ratings , operating condition ranges, or other parameters) listed in products specifications of any and all UT C products described or contained herein. UTC products are not designed for use in life support appliance s, devices or systems where malfunction of these products can be reasonably expected to result in perso nal injury. Reproduction in whole or in part is prohibited without the pr ior written consent of the cop yright owner. UTC reserves the right to make changes to information published in this document, includi ng without limitation specifications and product descriptions, at any time and without notice. This docu ment supersedes and replaces all information supplied prior to the publication hereof.