DTM3A25P20NFDB
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- Manufacturer or author: Diodes Incorporated
- PDF pages: 10
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Combination of PNP low VCE(sat) Transistor and N-Channel MOSFET Very low collector-emitter saturation voltage VCE(sat) High Collector Current Capability IC and ICM High Collector Current Gain (hFE) at high IC PD up to 2.47W for power demanding applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: U-DFN2020-6 (Type B) UL Flammability Rating 94V-0 Case Material: Molded Plastic. “Green” Molding Compound. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, Method 208 Weight: 0.007 grams (Approximate) Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DTM3A25P20NFDB-7 1W1 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlo rine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information 1W1 = Product Type Marking Code Y = Year: 0~9 (Last Digit of the Year) W = Week: A~Z: Week 1~26; a~z: Week 27~52 ; z represents week 52 and 53 X = A~Z: Internal Code M = Month (ex: 9 = September) 25V PNP LOW SAT TRANSISTOR WITH N-CHANNEL MOSFET Top View U-DFN2020-6 (Type B) Device Symbol Top View Pin-Out 1W1 YWX C G S E B D C D
Datasheet Number: DS38017 Rev.1 - 2 2 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Characteristic Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -3 A Peak Pulse Current ICM -6 A Base Current IB -500 mA Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±6 V Continuous Drain Current (Note 5) VGS = 10 V @TA = +25°C @TA = +85°C ID 0.63 0.45 A Pulsed Drain Current IDM 6 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Notes 5 & 7) PD 405 mW (Notes 5 & 8) 510 (Notes 6 & 7) 1,650 (Notes 6 & 8) 2,470 Thermal Resistance, Junction to Ambient (Notes 5 & 7) RJA 308 °C/W(Notes 5 & 8) 245 (Notes 6 & 7) 76 (Notes 6 & 8) 51 Thermal Resistance, Junction to Lead (Note 9) RJL 18 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge – Human Body Model ESD HBM 3,000 V 3A Electrostatic Discharge – Machine Model ESD MM 200 V C Notes: 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady -state. 6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm2) 2oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Datasheet Number: DS38017 Rev.1 - 2 3 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Thermal Characteristics and Derating information 100m 1 10 10m 100m See note 5 & 7 Single Pulse Tamb=25°C VCE(sat) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area IC Collector Current (A) VCE Collector-Emitter Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 See note 6 & 8 See note 6 & 7 See note 5 & 7 See note 5 & 8 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 120 150 180 210 240 270 300 330 Tamb=25°C, See note 5 & 7 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 0.1 100 Single Pulse Tamb=25°C, See note 5 & 7 Pulse Power Dissipation Pulse Width (s) Maximum Power (W) 100µ 1m 10m 100m 1 10 100 1k 100 Single Pulse Tamb=25°C, See note 6 & 7 Pulse Power Dissipation Pulse Width (s) Maximum Power (W) 100µ 1m 10m 100m 1 10 100 1k Tamb=25°C, See note 6 & 7 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s)
Datasheet Number: DS38017 Rev.1 - 2 4 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Typical Electrical Characteristics - BJT PNP (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -35 -60 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 11) BVCEO -25 -40 - V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.4 - V IE = -100µA Collector Cutoff Current ICBO - <1 -50 -0.5 nA µA VCB = -28V VCB = -28V, TA = +100°C Emitter Cutoff Current IEBO - <1 -50 nA VEB = -5.6V Collector Emitter Cutoff Current ICES - - -100 nA VCE= -32V Static Forward Current Transfer Ratio (Note 11) hFE 200 130 100 320 230 180 500 IC = -100mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V Collector-Emitter Saturation Voltage (Note 11) VCE(sat) - -85 -229 -150 -350 mV IC = -1A, IB = -100mA IC = -3A, IB = -300mA Base-Emitter Turn-On Voltage (Note 11) VBE(on) - -786 -850 mV IC = -1A, VCE = -5V Base-Emitter Saturation Voltage (Note 11) VBE(sat) - -895 -1,000 mV IC = -1A, IB = -100mA Note: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Datasheet Number: DS38017 Rev.1 - 2 5 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Typical Electrical Characteristics - BJT PNP (@TA = +25°C, unless otherwise specified.) 1m 10m 100m 11m 10m 100m 10m 100m 10.0 0.1 0.2 0.3 1m 10m 100m 1 100 100 200 300 400 500 1m 10m 100m 10.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 10.2 0.4 0.6 0.8 1.0 1.2 10m 100m 1 100 100 120 140 160 180 IC/IB=50 VCE(sat) v IC Tamb=25°C IC/IB=20 IC/IB=100 IC/IB=10 - VCE(sat) (V) - IC Collector Current (A) 100°C VBE(sat) v IC IC/IB=10 150°C 25°C -55°C - VCE(sat) (V) - IC Collector Current (A) 150°C hFE v IC VCE=-2V -55°C 25°C 100°C - IC Collector Current (A) 150°C 25°C VCE(sat) v IC IC/IB=10 100°C -55°C - VBE(sat) (V) - IC Collector Current (A) 150°C VBE(on) v IC VCE=-2V 100°C 25°C -55°C - VBE(on) (V) - IC Collector Current (A) Capacitance v Voltage f = 1MHz Cobo Cibo Capacitance (pF) - Voltage(V) Typical Gain (hFE)
Datasheet Number: DS38017 Rev.1 - 2 6 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Typical Electrical Characteristics – MOS N-Channel (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 12) Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS 1.0 µA VGS = V, VDS = 0V ON CHARACTERISTICS (Note 12) Gate Threshold Voltage VGS(th) 0.5 1.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) 0.3 0.4 Ω VGS = 4.5V, ID = 600mA 0.4 0.5 VGS = 2.5V, ID = 500mA 0.5 0.7 VGS = 1.8V, ID = 350mA Forward Transfer Admittance YFS 1.4 S VDS = 10V, ID = 400mA Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, ID = 150mA DYNAMIC CHARACTERISTICS (Note 13) Input Capacitance Ciss 60.67 pF VDS = 16V, VGS = 0V f = 1.0MHz Output Capacitance Coss 9.68 pF Reverse Transfer Capacitance Crss 5.37 pF Total Gate Charge QG 736.6 pC VGS = 4.5V, VDS = 10V, ID = 250mA Gate-to-Source Charge QGS 93.6 pC Gate-to-Drain Charge QGD 116.6 pC SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) 5.1 ns VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA Rise Time tr 7.4 Turn-Off Delay Time td(off) 26.7 Fall Time tf 12.3 Notes: 12. Short duration pulse test used to minimize self-heating effect. 13. Guaranteed by design. Not subject to production testing.
Datasheet Number: DS38017 Rev.1 - 2 7 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Typical Electrical Characteristics – MOS N-Channel (@TA = +25°C, unless otherwise specified.) 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V)DS I , DRAIN CURRENT (A)D V = 1.2VGS V = 1.5VGS V = 2.0VGS V = 2.5VGS V = 3.0VGS V = 4.5VGS V = 8.0VGS 0.3 0.6 0.9 1.2 1.5 0 0.5 1 1.5 2 2.5 3 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V)GS I , DRAIN CURRENT (A)D V = 5VDS T = -55°CA T = 25°CA T = 125°CA T = 150°CA T = 85°CA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage I , DRAIN-SOURCE CURRENT (A)D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 1.8VGS V = 4.5VGS V = 2.5VGS 0.1 0.2 0.3 0.4 0.5 0.6 I , DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature D R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA V = 4.5VGS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J R , DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(ON) V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D 0.2 0.4 0.6 0.8 Fig. 6 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)J R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA GS D
Datasheet Number: DS38017 Rev.1 - 2 8 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB 0.4 0.8 1.2 1.6 V , GATE THRESHOLD VOLTAGE (V)GS(TH) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)A I = 250µAD V , SOURCE-DRAIN VOLTAGE (V)SD Fig. 8 Diode Forward Voltage vs. Current 10I , SOURCE CURRENT (A)S T = 25°CA 100 0 5 10 15 20 Fig. 9 Typical Capacitance V , DRAIN-SOURCE VOLTAGE (V)DS C, CAPACITANCE (pF) Ciss Coss Crss 100 1,000 0 4 8 12 16 20 Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I , DRAIN-SOURCE LEAKAGE CURRENT (nA) DSS T = 25°CA T = 85°CA T = 125°CA T = 150°CA Fig. 11 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R (t) Duty Cycle, D = t /t J A JA R (t) = r(t) * JA R R = 486°C/W JA JA P(pk) D = 0.7 D = 0.5 D = 0.3 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.1
Datasheet Number: DS38017 Rev.1 - 2 9 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 - - 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e - - 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k - - 0.45 L 0.25 0.35 0.30 z - - 0.225 z1 - - 0.175 All Dimensions in mm Dimensions Value (in mm) C 0.650 G 0.150 G1 0.450 X 0.350 X1 0.600 X2 1.650 Y 0.500 Y1 1.000 Y2 2.300 R0.150 A A1 Seating Plane E b (Pin #1 ID) e L D k z C Y2 Y1(2x) X Y G X1(2x)
Datasheet Number: DS38017 Rev.1 - 2 10 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY A ND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further no tice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose product s are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product name s and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with in structions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorpora ted and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com