DTDG23YP KEXIN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
NPN Epitaxial Planar Silicon Transistor (with built-in resistors and zener diode). High DC Current Gain. Built-in Zener Diode Gives Strong Protection Against Reverse Surge By L-load (an inductive load). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Supply Voltage V CC 60 10 V Input Voltage V IN -6 to +40 V IC 1 ICP *1 2 Power Dissipation P D *2 1.5 W Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 *1 Pw 10ms, Duty cycle 2% *2 When mounted on 40x40x0.7mm ceramic board. Collector Current A Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit VI(off) VCC =5 V,I O = 100 A 0.3 VI(on) VO =0 . 4 V,IO = 100mA 2 Output Voltage V O(on) IO/II = 500mA/5mA 0.4 V Input Current I I VI =5 V 3 . 6 m A Output Current I O(off) VCC = 40V , VI =0 V 0 . 5 A DC Current Gain G I VO =2 V,I O = 500mA 300 Input Resistance R 1 1.54 2.2 2.86 k Emitter-base Resistance R 2 71 0 1 3 k Transistion Frequency f T *V CE =5 V,I E = -0.1A , f = 30MHz 80 MHz * Characteristics of built-in transistor Input Voltage V
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves Equivalent Circuit DTDG23YP Marking Marking E02
www.kexin.com.cn 3 SMD Type Transistors DTDG23YP