DTD143E_11 UTC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
UNISONIC TECHNOLOGIES CO., LTD DTD143E NPN SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 3 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R206-084,C DIGITAL TRANSISTORS (BUILT- IN RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUIT SOT-323 SOT-23 TO-92 ORDERING INFORMATION Order Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 DTD143EL-AE3-R DTD143EG-AE3-R SOT-23 G I O Tape Reel DTD143EL-AL3-R DTD143EG-AE3-R SOT-323 G I O Tape Reel DTD143EL-T92-B DTD143EG-T92-B TO-92 G O I Tape Box DTD143EL-T92-K DTD143EG-T92-K TO-92 G O I Bulk DTD143EL-T92-R DTD143EG-T92-R TO-92 G O I Tape Reel MARKING(FOR SOT-23/SOT-323 PACKAGE) DE3E E: Lead Free E: Halogen Free
DTD143E NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 2 0 6 - 0 8 4 , C ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Supply Voltage V CC 50 V Input Voltage V IN -10 ~ +30 V Output Current I OUT 500 mA Power Dissipation SOT-23/SOT-323 PD 200 mW TO-92 625 mW Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL SPECIFICATIONS (TA=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Input Voltage VIN(OFF) V CC =5V, IOUT =100μA 0.5 V VIN(ON) V OUT =0.3V, IOUT =20mA 3 Output Voltage V OUT(ON) I OUT/IIN =50mA/2.5mA 0.1 0.3 V Input Current I IN V IN=5V 1.8 mA Output Current I OUT(OFF) V CC =50V, VIN =0V 0.5 μA DC Current Gain h FE V OUT =5V, IOUT =50mA 47 Input Resistance R 1 3.29 4.7 6.11 K Ω Resistance Ratio R 2/R1 0.8 1 1.2 Transition Frequency f T V CE =10V, IE =−50mA, f=100MHz(Note) 200 MHz Note: Transition frequency of the device
DTD143E NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 2 0 6 - 0 8 4 , C TYPICAL CHARACTERISTIC 500 0.5 1 2 5 10 20 50 100 200 500 Output Current, IOUT (mA) -40 TA=100 VOUT=5V 200 100 DC Current Gain vs. Output Current 1000 500 0.5 1 2 5 10 20 50 100 200 500 Output Current, IOUT (mA) -40 TA=100 200 100 Output Voltage vs. Output Current lOUT/lIN=20 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.