DTD143E UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD DTD143E NPN EPITAXIAL SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 3 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R206-084,A DIGITAL TRANSISTORS (BUILT- IN RESISTORS) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. * Only the on / off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT OUT GND OUT GND IN IN SOT-23 SOT-323 *Pb-free plating product number:DTD143EL ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing DTD143E-AE3-6-R DTD143EL-AE3-6-R SOT-23 G I O Tape Reel DTD143E-AL3-6-R DTD143EL-AL3- 6-R SOT-323 G I O Tape Reel DTD143EL-AE3-6-R (1)Packing Type (3)Package Type (2)Pin Assignment (1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23, AL3: SOT-323 (4)Lead Plating (4) L: Lead Free Plating , Blank: Pb/Sn MARKING DE3
DTD143E NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 2 0 6 - 0 8 4 , A ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Supply Voltage V CC 50 V Input Voltage V IN -10 ~ +30 V Output Current I OUT 500 mA Power Dissipation P D 200 mW Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL SPECIFICATIONS (Ta=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VIN(OFF) V CC =5V, IOUT =100µA 0.5 Input Voltage VIN(ON) V OUT =0.3V, IOUT =20mA 3 V Output Voltage V OUT(ON) I OUT/IIN =50mA/2.5mA 0.1 0.3 V Input Current I IN V IN=5V 1.8 mA Output Current I OUT(OFF) V CC =50V, VIN =0V 0.5 µA DC Current Gain G IN V OUT =5V, IOUT =50mA 47 Input Resistance R 1 3.29 4.7 6.11 K Ω Resistance Ratio R 2/R1 0.8 1 1.2 Transition Frequency f T V CE =10V, IE =−50mA, f=100MHz * 200 MHz * Transition frequency of the device
DTD143E NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 2 0 6 - 0 8 4 , A TYPICAL CHARACTERISTIC 100 500m 200m 100m 500μ1m 2m 5m 10m20m 50m100m200m 500m Output Current , IOUT (A) Input Voltage vs. Output Current (ON Characteristics) Ta=-40℃ 25℃ 100℃ VOUT=0.3V Input Voltage, VIN (ON) (V) 10m 0 0.5 1.0 1.5 2.0 25℃ Ta=100℃ -40℃ VCC=5V5m 50μ 200μ 100μ 50μ 20μ 10μ 2.5 3.0 Output Current, IOUT (A) Input Voltage , VI(OFF) (V) Output Current vs. Input Voltage (OFF Characteristics) 500 500μ1m 2m 5m 10m20m 50m100m200m500m Output Current , IOUT (A) -40℃ 25℃ Ta=100℃ VOUT=5V 200 100 DC Current Gain, GI DC Current Gain vs. Output Current 500m 500μ1m 2m 5m 10m 20m 50m100m200m500m Output Current, IOUT (A) -40℃ 25℃ Ta=100℃ 200m 100m 50m 20m 10m Output Voltage, VOUT(ON) (V) Output Voltage vs. Output Current lOUT/lIN=20 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.