DTD123Y UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD DTD123Y NPN EPITAXIAL SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 3 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R206-087,A DIGITAL TRANSISTORS (BUILT-IN RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT OUT GND IN GND OUTIN SOT-23 SOT-323 *Pb-free plating product number: DTD123YL ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing DTD123Y-AE3-6-R DTD123YL-AE3-6-R SOT-23 G I O Tape Reel DTD123Y-AL3-6-R DTD123YL-AL3-6-R SOT-323 G I O Tape Reel Note: G: GND I: Input O: Output DTD123YL-AE3-6-R (1)Packing Type (3)Package Type (4)Lead Plating (2)Pin Assignment (1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23, AL3: SOT-323 (4) L: Lead Free Plating , Blank: Pb/Sn MARKING DC3Y
DTD123Y NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 2 0 6 - 0 8 7 , A ABSOLUTE MAXIMUM RATING (Ta=25℃) PARAMETER SYMBOL RATINGS UNIT Supply voltage V CC 50 V Input voltage V IN -5 ~ +12 V Output current I C 500 mA Power dissipation P D 200 mW Junction Temperature T J +150 ℃ Storage Temperature T STG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VIN(OFF) V CC=5V, IOUT=100µA 0.3 Input Voltage VIN(ON) V OUT=0.3V, IOUT=20mA 2 V Output Voltage V OUT(ON) I O/II=50mA/2.5mA 0.1 0.3 V Input Current I IN V IN=5V 3.6 mA Output Current I O(OFF) V CC=50V, VIN=0V 0.5 µA DC Current Gain G I V OUT=5V, IOUT=50mA 56 Input Resistance R 1 1.54 2.2 2.86 K Ω Resistance Ratio R 2/R1 3.6 4.5 5.5 Transition Frequency f T V CE=10V, IE= −50mA, f=100MHz * 200 MHz * Transition frequency of the device
DTD123Y NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 2 0 6 - 0 8 7 , A TYPICAL CHARACTERISTICS Ta=-40℃ 25℃ 100℃ Fig.1 Input Voltage vs. Output Current (ON Characteristics) Output current , IO (A) 500µ1m 2m 5m 10m 20m 50m100m200m 500m 100m 200m 500m 100 Input Voltage, VIN(ON) (V) VOUT=0.3V VCC=5V Ta=100℃ 25℃ -40℃ 10µ 20µ 50µ 100µ 200µ 500µ 10m Input Voltage, VI(OFF) (V) Fig.2 Output Current vs. Input Voltage (OFF Characteristics ) Output Current, IOUT (A) Ta=100℃ 25℃ -40℃ VOUT=5V 500µ 2m 5m10m20m50m100m200m500m Output Current, IOUT (A) 100 200 500 Fig.3 DC Current Gain vs. Output Current Dc Current Gain, GI Ta=100℃ 25℃ -40℃ IO/II=20 500µ 2m 5m10m 20m50m100m200m500m1m Output Current, IOUT (A) 10m 20m 50m 100m 200m 500m Output Voltage : VOUT(ON) (V) Fig.4 Output Voltage vs. Output Current UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.