DTD123Y WEITRON | Alldatasheet

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Bias Resistor Transistor NPN Silicon DTD123Y http://www.weitron.com.tw WEITRON COLLECTOR EMITTER BASE R 1 R 2 SOT-23 3Lead(Pb)-FreeP b 1/3 25-Apr-08 Parameter Symbol Min Typ Max Unit Conditions VI(off) 0.3 VI Am 02 = oI,V3.0 = oV2 )no( Output voltage Vo(on) 0.1 0.3 V Io/II = 50 mA/2.5 mA Input current II 3.6 mA = 5V Output current Io(off) 0.5 µA Vcc = 50V,V = 0V Am 05=oI,V5 = oV65EF hniag tnerruc CD Input resistance R1 1.54 2.2 2.86 kΩ Resistance ratio R2/R1 3.6 4.5 5.5 Transition frequency fT 200 MHZ VCE = 10V,IE = -500m A,f = 100MHZ* *Transition frequency of the device DEVICE MARKING : F62 VInput voltage Electrical characteristics (TA = 25ºC) Parameter Symbol Limits Unit Supply voltage Vcc 50 V Input voltage VIN 5~+12 V Output current IC 500 mA Power dissipation Pd 200 mW Junction temperature Tj 150 Storage temperature Tstg 55~+150 Absolute maximum ratings (TA = 25ºC) - - - - - - - - - - - - VI I Vcc = 5V,Io = 100µA

http://www.weitron.com.tw DTD123Y 25-Apr-08

http://www.weitron.com.tw 3/3 25-Apr-08 SOT-23 Outline Dimensions Unit:mm A B DE G M L H J TOP VIEW Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 K C