DTD101 FS | Alldatasheet

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Digital transistors (built-in resistors) 2011. 09. 06 1/3 SEMICONDUCTOR TECH NICAL DATA DTD101 Revision No : 0 SOT-23 GND OUT IN NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping E6 4.7 4.7 3000/Tape & Reel 10000/Tape & Reel We declare that the material of product compliance with RoHS requirements. 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allowpositive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy . Inverter, Inter face, Driver Features •

  • Applications DTD101 DTD101 E6 4.7 4.7 Absolute maximum ratings (T a=25C) LimitsParameter Symbol VCC 50 −10 to +30 500 200 150 −55 to +150 V VIN V mA mW IC PD Tj Tstg Unit Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Electrical characteristics(T a=25°C) Parameter Symbol VI (off) VI (on) VO (on) II IO (off) GI R2 / R1 fT Min. 3.29 0.8 0.1 4.7 200 0.5 0.3 1.8 0.5 6.11 1.2 V V CC=5V, IO=100µA VO=0.3V, IO=20mA IO / II=50mA / 2.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=50mA VCE=10V, IE= −50mA, f=100MHz V mA µA kΩ − − MHz Typ. Max. Unit Conditions Characteristics of built-in transistor Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency
  1. 09. 06 2/3 DTD102 Revision No : 0 Electrical characteristic curves VO=0.3V INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : IO (A) 500µ 1m 2m 5m 10m 20m 50m 100m200m 500m 500m 200m 100m 100 5 25˚C 100˚C Ta= −40˚C Fig.1 Input voltage vs. output current (ON characteristics) VCC=5V INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) OUTPUT CURRENT : Io (A) 10m 500µ 200µ 100µ 50µ 20µ 10µ Ta=100˚C 25˚C −40˚C 1m 2m 5m 10m 100m50m20m 200m 500m500µ 100 200 500 VO=5V OUTPUT CURRENT : IO (A) DC CURRENT GAIN : GI Fig.3 DC current gain vs. output current Ta=100˚C 25˚C −40˚C OUTPUT CURRENT : IO (A) OUTPUT VOLTAGE : VO (on) (V) Fig.4 Output voltage vs. output current lO / lI=20 500µ 1m 2m 5m 10m 20m 50m 500m100m200m 500m 200m 100m 50m 20m 10m 25˚C −40˚C Ta=100˚C

2011 09. 06 3/3 DTD101 Revision No : 0 D JK L A C B S H GV 1 2 mm inches 0 037 0 95 0 037 0 95 0 079 2 0 0 035 0 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. PIN 1 BASE

2 EMI TTER

3 COLLECTOR

A B C D G H J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MIN 2.80 1.20 0.89 0.37 1.78 0.013 0.085 0.35 0.89 2.10 0.45 MAX 3.04 1.40 1.11 0.50 2.04 0.100 0.177 0.69 1.02 2.64 0.60