DTC114EE SECOS | Alldatasheet
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Technical content
FEATURES
- Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation making device design easy. * The bias resistors consis of thin-film resistors with compete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. External dimensions (Units:mm SOT-323 SOT-523 TO-92S SOT-23 SOT-23-3L SOT-323 Elektronische Bauelemente http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 Digital Transistors NPN (Built-in Resistors) DTC114EE/DTC114EUA/DTC114EKA /DTC114ESA/DTC114ECA Absolute maximum ratings(Ta=25℃) Limits (DTC114E□) Parameter Symbol E UA CA KA SA Unit Supply voltage VCC 50 V Input voltage VIN -10~ 40 V IO 50 Output current IC(MAX) 100 mA Power dissipation Pd 150 200 300 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~ 150 ℃
01-Jun-2002 Rev. A Page 2 of 2 Digital Transistors NPN (Built-in Resistors) DTC114EE/DTC114EUA/DTC114EKA /DTC114ESA/DTC114ECA http://www.SeCoSGmbH.com Any changing of specification will not be informed individua Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Elektronische Bauelemente VI(off) 0.5 VCC=5V ,IO=100µA Input voltage VI(on) 3 V VO=0.3V ,IO=10 mA Output voltage VO(on) 0.3 V I O/II=10mA/0.5mA Input current II 0.88 mA V I=5V Output current IO(off) 0.5 µA V CC=50V, VI=0 DC current gain GI 30 V O=5V ,IO=5mA Input resistance R1 7 10 13 K Ω Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT 250 MHz V CE=10V ,IE=-5mA,f=100MHz Typical Characteristics