DTC114EM DGNJDZ | Alldatasheet

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Technical content

Digital transistors (built-in resistors) DTC114EM/DTC114EE/DTC114EUA DTC114EKA /DTC114ECA /DTC114ESA DIGITAL TRANSISTOR (NPN)

FEATURES

  1. Built-in bias resistors enable the conf iguration of an invert er circuit without connecting external input resistors(see equivalent circuit) 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almost completely eliminating parasitic effects 3. Only the on/off conditions need to be set for operation, making device design easy PIN CONNENCTIONS AND MARKING SOT-523 SOT-323 SOT-23 TO-92S SOT-23 SOT-23-3L DTC114EE DTC114EUA DTA114ECA DTC114ECA DTC114EKA DTC114ESA Addreviated symbol: 24 Addreviated symbol: 24 Addreviated symbol: 24 Addreviated symbol: 24 Addreviated symbol: 24 SOT-723 DTC114EM Addreviated symbol: 24 B,Jul,2011 DONGGUAN NANJING ELECTRONICS LTD.,

Absolute maximum ratings(Ta=25℃) Limits (DTC114E□) Parameter Symbol M E UA KA CA SA Unit Supply voltage V CC 50 V Input voltage V IN -10~40 V I O Output current I C(MAX) 100 mA Power dissipation Pd 100 150 200 300 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min Typ Max Unit Conditions V I(off) 0.5 V CC =5V ,I O =100µA Input voltage V I(on) V V O =0.3V ,I O =10 mA Output voltage V O(on)

0.3 V I

O I =10mA/0.5mA Input current I I 0.88 mA V I =5V Output current I O(off) 0.5 µA V CC =50V, V I DC current gain G I 30 V O =5V ,I O =5mA Input resistance R 7 10 13 K Ω Resistance ratio R 0.8 1 1.2 Transition frequency f T

250 MHz V

O =10V ,I O =5mA,f=100MHz B,Jul,2011

0.1 1 10 100 0.1 100 11 0 1 00 0.01 0.1 048 1 2 1 6 2 0 0.1 1 10 100 100 1000 0.01 0.1 0 25 50 75 100 125 150 100 150 200 250 300 350 400 0.03 0.3 300 0.3 0.03 0.3 0.3 0.3 OFF CharacteristicsON Characteristics T a =25 100 V O =0.3V INPUT VOLTAGE V I(ON) (V) OUTPUT CURRENT I O (mA) V O(ON) —— I O T a =100 I O I =20 OUTPUT VOLTAGE V O(ON) (V) OUTPUT CURRENT I O (mA) f=1MHz T a =25 C O —— V R OUTPUT CAPACITANCE C O (pF) REVERSE BIAS VOLTAGE V R (V) G I —— I O T a =100 V O =5V DC CURRENT GAIN G I OUTPUT CURRENT I O (mA) T a =100 V CC =5V OUTPUT CURRENT I O (mA) INPUT VOLTAGE V I(OFF) (V) DTC114ECATypical Characteristics P D —— T a DTC114ESA DTC114EUA/KA/CA DTC114EE DTC114EM POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) B,Jul,2011