DTA114EE AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com DTC114EE~WE DIGITAL TRANSISTORS (BRT) NPN TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK REV1.0 - APR 2016 RELEASED, APR 2020 UPDATED - - 1 - DESCRIPTION FEATURES This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two res istors; a series base resistor and a base -emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The DTC114EE~WE is available in SC-89 package  Simplifies Circuit Design  Reduces Board Space  Reduces Component Count  Available in SC-89 package PIN DESCRIPTION

ORDERING INFORMATION

Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products

AiT Semiconductor Inc. www.ait-ic.com DTC114EE~WE DIGITAL TRANSISTORS (BRT) NPN TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK REV1.0 - APR 2016 RELEASED, APR 2020 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VCBO, Collector-Base Voltage 50Vdc VCEO, Collector-Emitter Voltage 50Vdc IC, Collector Current 100mAdc Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the El ectrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Total Device Dissipation,FR−4 Board NOTE1 @ TA = 25°C Derate above 25°C PD 200 1.6 mW mW/°C Thermal Resistance,Junction−to−Ambient NOTE1 RθJA 600 °C/W Total Device Dissipation, FR−4 Board NOTE2 @ TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient NOTE2 RθJA 400 °C/W Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C NOTE1: FR−4 @ Minimum Pad NOTE2: FR−4 @ 1.0 × 1.0 Inch Pad

AiT Semiconductor Inc. www.ait-ic.com DTC114EE~WE DIGITAL TRANSISTORS (BRT) NPN TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK REV1.0 - APR 2016 RELEASED, APR 2020 UPDATED - - 3 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Collector−Base Cutoff Current ICBO VCB = 50 V, IE = 0 100 nAdc Collector−Emitter Cutoff Current ICEO VCE = 50 V, IB = 0 500 nAdc Emitter−Base Cutoff Current IEBO VEB = 6.0 V, IC = 0 DTC114EE DTC124EE DTC144EE DTC114YE DTC114TE DTC143TE DTC123EE DTC143EE DTC143ZE DTC124XE DTC123JE DTC115EE DTC144WE 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 50 Vdc Collector−Emitter Breakdown Voltage NOTE3 V(BR)CEO IC = 2.0mA, IB = 0 50 Vdc ON CHARACTERISTICS NOTE3 DC Current Gain hFE VCE=10V, IC=5.0mA DTC114EE DTC124EE DTC144EE DTC114YE DTC114TE DTC143TE DTC123EE DTC143EE DTC143ZE DTC124XE DTC123JE DTC115EE DTC144WE 160 160 8.0 100 140 140 350 350 200 150 140 150 140

AiT Semiconductor Inc. www.ait-ic.com DTC114EE~WE DIGITAL TRANSISTORS (BRT) NPN TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK REV1.0 - APR 2016 RELEASED, APR 2020 UPDATED - - 4 - Parameter Symbol Conditions Min. Typ. Max. Unit Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.3mA

0.25 Vdc

IC = 10mA, IB = 5mA DTC123EE IC = 10mA, IB = 1mA DTC143TE DTC114TE DTC143EE DTC143ZE DTC124XE Output Voltage (on) VOL VCC = 5.0V, VB = 2.5V, RL = 1.0kΩ DTC114EE DTC124EE DTC114YE DTC114TE DTC143TE DTC123EE DTC143EE DTC143ZE DTC124XE DTC123JE 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2

0.2 Vdc

VCC = 5.0V, VB = 3.5V, RL = 1.0kΩ DTC144EE 0.2 VCC = 5.0V, VB = 5.5V, RL = 1.0kΩ DTC115EE 0.2 VCC = 5.0V, VB = 4.0V, RL = 1.0kΩ DTC144WE 0.2 Output Voltage (off) VOH VCC = 5.0V, VB = 0.5V, RL = 1.0kΩ 4.9 Vdc VCC = 5.0V, VB = 0.25V, RL = 1.0kΩ DTC143TE DTC143ZE DTC114TE DTC115EE

AiT Semiconductor Inc. www.ait-ic.com DTC114EE~WE DIGITAL TRANSISTORS (BRT) NPN TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK REV1.0 - APR 2016 RELEASED, APR 2020 UPDATED - - 5 - Parameter Symbol Conditions Min. Typ. Max. Unit Input Resistor R1 DTC114EE DTC124EE DTC144EE DTC114YE DTC114TE DTC143TE DTC123EE DTC143EE DTC143ZE DTC124XE DTC123JE DTC115EE DTC144WE 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 32.9 4.7 2.2 4.7 4.7 2.2 100 28.6 61.1 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 kΩ Resistor Ratio R1/R2 DTC114EE/DTC124EE/ DTC144EE/DTC115EE DTC114YE DTC143TE/DTC114TE DTC123EE/DTC143EE DTC143ZE DTC124XE DTC123JE DTC144WE 0.8 0.17 0.8 0.055 0.38 0.038 1.7 1.0 0.21 1.0 0.1 0.47 0.047 2.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6 NOTE3: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% RESISTOR VALUES Device R1 (k) R2 (k) DTC114EE 10 10 DTC124EE 22 22 DTC144EE 47 47 DTC114YE 10 47 DTC114TE 10 ∞ DTC143TE 4.7 ∞ DTC123EE 2.2 2.2 DTC143EE 4.7 4.7 DTC143ZE 4.7 47 DTC124XE 22 47 DTC123JE 2.2 47 DTC115EE 100 100 DTC144WE 47 22

AiT Semiconductor Inc. www.ait-ic.com DTC114EE~WE DIGITAL TRANSISTORS (BRT) NPN TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK REV1.0 - APR 2016 RELEASED, APR 2020 UPDATED - - 9 -

PACKAGE INFORMATION

Dimension in SC-89 Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 1.50 1.70 0.059 0.067 B 0.75 0.95 0.030 0.040 C 0.60 0.80 0.024 0.031 D 0.23 0.33 0.009 0.013 G 0.50 BSC 0.020 BSC H 0.53 REF 0.021 REF J 0.10 0.20 0.004 0.008 K 0.30 0.50 0.012 0.020 L 1.10 REF 0.043 REF M - 10° - 10° N - 10° - 10° S 1.50 1.70 0.059 0.067

AiT Semiconductor Inc. www.ait-ic.com DTC114EE~WE DIGITAL TRANSISTORS (BRT) NPN TRANSISTORS WITH MONOLITHIC BIAS RESISTOR NETWORK REV1.0 - APR 2016 RELEASED, APR 2020 UPDATED - - 10 - IMPORTANT NOTICE AiT Semiconduct or Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before p lacing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other crit ical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.